Effect of additive-pulse mode locking on an external-cavity surface-emitting InGaAs semiconductor laser

Understanding quantum confinement in nanowires: basics, applications and possible laws

A comprehensive investigation of quantum confinement in nanowires has been carried out. Though applied to silicon nanowires (SiNWs), it is general and applicable to all nanowires. Fundamentals and applications of quantum confinement in nanowires and possible laws obeyed by these nanowires, have been investigated. These laws may serve as backbones of nanowire science and technology. The relationship between energy band gap and nanowire diameter has been studied. This relationship appears to be universal. A thorough review indicates that the first principles results for quantum confinement vary widely. The possible cause of this variation has been examined. Surface passivation and surface reconstruction of nanowires have been elucidated. It has been found that quantum confinement owes its origin to surface strain resulting from surface passivation and surface reconstruction and hence thin nanowires may actually be crystalline-core/amorphous-shell (c-Si/a-Si) nanowires. Experimental data available in the literature corroborate with the suggestion. The study also reveals an intrinsic relationship between quantum confinement and the surface amorphicity of nanowires. It demonstrates that surface amorphicity may be an important tool to investigate the electronic, optoelectronic and sensorial properties of quantum-confined nanowires.

Electrically pumped mode-locked vertical-cavity semiconductor lasers

We demonstrate what is to our knowledge the first electrically pumped mode-locked vertical-cavity surfaceemitting laser. The lasing threshold current is 15 mA with a 1% output coupler. The output pulse width is 80 ps at a repetition rate of 1 GHz.