Direct autocorrelation measurements of mid-infrared picosecond pulses by quantum-well devices

Single-silicon CCD-CMOS platform for multi-spectral detection from terahertz to x-rays

Charge-coupled devices (CCDs) are a well-established imaging technology in the visible and x-ray frequency ranges. However, the small quantum photon energies of terahertz radiation have hindered the use of this mature semiconductor technological platform in this frequency range, leaving terahertz imaging totally dependent on low-resolution bolometer technologies. Recently, it has been shown that silicon CCDs can detect terahertz photons at a high field, but the detection sensitivity is limited. Here we show that silicon, complementary metal-oxide-semiconductor (CMOS) technology offers enhanced detection sensitivity of almost two orders of magnitude, compared to CCDs. Our findings allow us to extend the low-frequency terahertz cutoff to less than 2 THz, nearly closing the technological gap with electronic imagers operating up to 1 THz. Furthermore, with the silicon CCD/CMOS technology being sensitive to mid-infrared (mid-IR) and the x-ray ranges, we introduce silicon as a single detector platform from 1 EHz to 2 THz. This overcomes the present challenge in spatially overlapping a terahertz/mid-IR pump and x-ray probe radiation at facilities such as free electron lasers, synchrotron, and laser-based x-ray sources.

High-performing nonlinear visualization of terahertz radiation on a silicon charge-coupled device

Photoinduced electron transitions can lead to significant changes of the macroscopic electronic properties in semiconductors. This principle is responsible for the detection of light with charge-coupled devices. Their spectral sensitivity is limited by the semiconductor bandgap which has restricted their visualization capabilities to the optical, ultraviolet, and X-ray regimes. The absence of an imaging device in the low frequency terahertz range has severely hampered the advance of terahertz imaging applications in the past. Here we introduce a high-performing imaging concept to the terahertz range. On the basis of a silicon charge-coupled device we visualize 5–13 THz radiation with photon energy under 2% of the sensor's band-gap energy. The unprecedented small pitch and large number of pixels allow the visualization of complex terahertz radiation patterns in real time and with high spatial detail. This advance will have a great impact on a wide range of terahertz imaging disciplines.

The absence of an imaging device in the low frequency terahertz range has hindered the advance of applications. Here, Shalaby et al. introduce a silicon based charge coupled device allowing the visualization of terahertz radiation in real time and at high spatial detail.

Ultrasensitive femtosecond two-photon detector with resonantly enhanced nonlinear absorption

We report on two-photon detection based on nonlinear absorption between subbands in quantum wells. Resonantly enhanced nonlinear absorption, 6 orders of magnitude higher than that of typical bulk semiconductors, leads to a threshold power density for quadratic detection as low as 0.1 W/cm2 and to femtosecond time resolution. The approach facilitates dynamic characterization of the optical light field of infrared emitters with unprecedented sensitivity. We also present a new method for determining the intersubband and intrasubband scattering times by means of autocorrelation measurements.

Two-photon lasers based on intersubband transitions in semiconductor quantum wells

We propose to make a two-photon laser based on intersubband (sublevel) transitions in semiconductor nanostructures. The advantages and feasibility of such a two-photon laser are analyzed in detail using the density matrix approach. Both one-photon and two-photon gains in a three subband quantum well structure are studied on the same footing to show how the two-photon gain can be maximized, while the competing one-photon gain is minimized. The results show that a sufficient two-photon gain can be achieved to overcome one-photon competition and the loss of a conventional semiconductor cavity, making intersubband transitions one of the very few feasible approaches to two-photon lasing.