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Principle and Applications of the Coupling of Surface Plasmons and Excitons. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10051774] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Surface plasmons have been attracting increasing attention and have been studied extensively in recent decades because of their half-light and half-material polarized properties. On the one hand, the tightly confined surface plasmonic mode may reduce the size of integrated optical devices beyond the diffraction limit; on the other hand, it provides an approach toward enhancement of the interactions between light and matter. In recent experiments, researchers have realized promising applications for surface plasmons in quantum information processing, ultra-low-power lasers, and micro-nano processing devices by using plasmonic structures, which have demonstrated their superiority over traditional optics structures. In this paper, we introduce the theoretical principle of surface plasmons and review the research work related to the interactions between plasmons and excitons. Some perspectives with regard to the future development of plasmonic coupling are also outlined.
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Wang H, Xiong S, Song J, Zhao F, Yan Z, Hong X, Zhang T, Zhang W, Zhou K, Li C, Wang Y. High temperature resistant ultra-short DBR Yb-doped fiber laser. APPLIED OPTICS 2019; 58:4474-4478. [PMID: 31251260 DOI: 10.1364/ao.58.004474] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2019] [Accepted: 05/06/2019] [Indexed: 06/09/2023]
Abstract
We present a distributed Bragg reflector (DBR) Yb-doped fiber laser based on a pair of type IA fiber Bragg gratings (FBGs). The high temperature resistant gratings are fabricated in high absorption hydrogen loaded Yb-doped silica fiber by use of a 244 nm argon laser and phase mask method. The DBR laser, with only 10 mm cavity length, exhibits high signal-noise ratio (SNR) of over 50 dB and can survive at 450°C in a long term with stable output power and central wavelength. Besides, the laser has a relatively low temperature sensitivity of 8.9 pm/°C, which contributes to cross-sensitization of stress and temperature.
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He J, Wang Y, Liao C, Wang C, Liu S, Yang K, Wang Y, Yuan X, Wang GP, Zhang W. Negative-index gratings formed by femtosecond laser overexposure and thermal regeneration. Sci Rep 2016; 6:23379. [PMID: 26979090 PMCID: PMC4793244 DOI: 10.1038/srep23379] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2015] [Accepted: 03/04/2016] [Indexed: 12/04/2022] Open
Abstract
We demonstrate a method for the preparation of negative-index fibre Bragg gratings (FBGs) using 800 nm femtosecond laser overexposure and thermal regeneration. A positive-index type I-IR FBG was first inscribed in H2-free single-mode fibre using a femtosecond laser directed through a phase mask, and then a highly polarization dependant phase-shifted FBG (P-PSFBG) was fabricated from the type I-IR FBG by overexposure to the femtosecond laser. Subsequently, the P-PSFBG was thermally annealed at 800 °C for 12 hours. Grating regeneration was observed during thermal annealing, and a negative-index FBG was finally obtained with a high reflectivity of 99.22%, an ultra-low insertion loss of 0.08 dB, a blueshift of 0.83 nm in the Bragg wavelength, and an operating temperature of up to 1000 °C for more than 10 hours. Further annealing tests showed that the thermal stability of the negative-index FBG was lower than that of a type II-IR FBG, but much higher than that of a type I-IR FBG. Moreover, the formation of such a negative-index grating may result from thermally regenerated type IIA photosensitivity.
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Affiliation(s)
- Jun He
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yiping Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Changrui Liao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Chao Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.,Department of Electrical Engineering, The Hong Kong Polytechnic University, Hong Kong, China
| | - Shen Liu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kaiming Yang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ying Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Xiaocong Yuan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Guo Ping Wang
- College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China
| | - Wenjing Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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