Feng X, Liu J, Yang W, Yu X, Jiang S, Ning T, Liu J. Broadband indium tin oxide nanowire arrays as saturable absorbers for solid-state lasers.
OPTICS EXPRESS 2020;
28:1554-1560. [PMID:
32121863 DOI:
10.1364/oe.380903]
[Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2019] [Accepted: 01/01/2020] [Indexed: 06/10/2023]
Abstract
Indium Tin Oxide nanowire arrays (ITO-NWAs), as epsilon-near-zero (ENZ) materials, exhibit a fast response time and a low saturable absorption intensity, which make them promising photoelectric materials. In this study, ITO-NWAs were successfully fabricated using a chemical vapor deposition (CVD) method, and the saturable absorption properties of this material were characterized in the near-infrared region. Further, passively Q-switched all-solid-state lasers were realized at wavelengths of 1.0, 1.3, and 2.0 µm using the as-prepared saturable absorber (SA). To the best of our knowledge, we present the first application of ITO-NWAs in all-solid-state lasers. The results reveal that ITO-NWAs may be applied as an SA while developing Q-switched lasers and that they exhibit a broad application prospect as broadband saturable absorption materials.
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