On-chip parametric amplification with 26.5 dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

Revealing Structural Disorder in Hydrogenated Amorphous Silicon for a Low-Loss Photonic Platform at Visible Frequencies

The high refractive index of hydrogenated amorphous silicon (a-Si:H) at optical frequencies is an essential property for the efficient modulation of the phase and amplitude of light. However, substantial optical loss represented by its high extinction coefficient prevents it from being utilized widely. Here, the bonding configurations of a-Si:H are investigated, in order to manipulate the extinction coefficient and produce a material that is competitive with conventional transparent materials, such as titanium dioxide and gallium nitride. This is achieved by controlling the hydrogenation and silicon disorder by adjusting the chemical deposition conditions. The extinction coefficient of the low-loss a-Si:H reaches a minimum of 0.082 at the wavelength of 450 nm, which is lower than that of crystalline silicon (0.13). Beam-steering metasurfaces are demonstrated to validate the low-loss optical properties, reaching measured efficiencies of 42%, 62%, and 75% at the wavelengths of 450, 532, and 635 nm, respectively. Considering its compatibility with mature complementary metal-oxide-semiconductor processes, the low-loss a-Si:H will provide a platform for efficient photonic operating in the full visible regime.

Mid-infrared frequency combs at 10 GHz

We demonstrate mid-infrared (MIR) frequency combs at 10 GHz repetition rate via intra-pulse difference-frequency generation (DFG) in quasi-phase-matched nonlinear media. Few-cycle pump pulses (≲15fs, 100 pJ) from a near-infrared electro-optic frequency comb are provided via nonlinear soliton-like compression in photonic-chip silicon-nitride waveguides. Subsequent intra-pulse DFG in periodically poled lithium niobate waveguides yields MIR frequency combs in the 3.1-4.8 µm region, while orientation-patterned gallium phosphide provides coverage across 7-11 µm. Cascaded second-order nonlinearities simultaneously provide access to the carrier-envelope-offset frequency of the pump source via in-line f-2f nonlinear interferometry. The high-repetition rate MIR frequency combs introduced here can be used for condensed phase spectroscopy and applications such as laser heterodyne radiometry.

Silicon/silicon-rich nitride hybrid-core waveguide for nonlinear optics

A silicon/silicon-rich nitride hybrid-core waveguide has been proposed and experimentally demonstrated for nonlinear applications to fill the gap between the pure silicon waveguide and the pure silicon nitride waveguide with respect to the nonlinear properties. The hybrid-core waveguide presented here leverages the advantages of the silicon and the silicon-rich nitride waveguide platforms, showing a large nonlinearity γ of 72 ± 5 W^-1 m^-1 for energy-efficient four-wave mixing wavelength conversion. At the same time, the drawbacks of the material platforms are dramatically mitigated, exhibiting a reduced two-photon absorption coefficient β_TPA of 0.023 cm/GW resulting in an increased nonlinear figure-of-merit as large as 21.6. A four-wave-mixing conversion efficiency as large as -5.3 dB has been achieved with the promise to be larger than 0 dB. These findings are strong arguments supporting the silicon/silicon-rich nitride hybrid-core waveguide to be used for energy-efficient nonlinear photonic applications.

Tunable mid-infrared generation via wide-band four-wave mixing in silicon nitride waveguides

We demonstrate wide-band frequency down-conversion to the mid-infrared (MIR) using four-wave mixing (FWM) of near-infrared (NIR) femtosecond-duration pulses from an Er:fiber laser, corresponding to 100 THz spectral translation. Photonic-chip-based silicon nitride waveguides provide the FWM medium. Engineered dispersion in the nanophotonic geometry and the wide transparency range of silicon nitride enable large-detuning FWM phase-matching and results in tunable MIR from 2.6 to 3.6 μm on a single chip with 100-pJ-scale pump-pulse energies. Additionally, we observe up to 25 dB broadband parametric gain for NIR pulses when the FWM process is operated in a frequency up-conversion configuration. Our results demonstrate how integrated photonic circuits pumped with fiber lasers could realize multiple nonlinear optical phenomena on the same chip and lead to engineered synthesis of broadband, tunable, and coherent light across the NIR and MIR wavelength bands.

Pump-degenerate phase-sensitive amplification in amorphous silicon waveguides

We demonstrate phase-sensitive amplification in hydrogenated amorphous silicon photonic waveguides based on pump-degenerate four-wave mixing at continuous-wave (CW) operation, as well as at repetition rates of both 90 MHz and 10 GHz. At 90 MHz pulsed operation, an 11.7 dB phase-sensitive extinction ratio (ER) is achieved with a peak pump power of 1.6 W. At 10 GHz pulsed operation, a 6.6 dB phase-sensitive ER is achieved with a peak pump power of 0.5 W. At CW operation, a 1.6 dB ER is achieved with a pump power of 38 mW.

Bi-directional top-hat D-Scan: single beam accurate characterization of nonlinear waveguides

The characterization of a third-order nonlinear integrated waveguide is reported for the first time by means of a top-hat dispersive-scan (D-Scan) technique, a temporal analog of the top-hat Z-Scan. With a single laser beam, and by carrying two counterdirectional nonlinear transmissions to assess the input and output coupling efficiencies, a novel procedure is described leading to accurate measurement of the TPA figure of merit, the effective two-photon absorption (TPA), and optical Kerr (including the sign) coefficients. The technique is validated in a silicon strip waveguide for which the effective nonlinear coefficients are measured with an accuracy of ±10%.

Comprehensive analysis of passive generation of parabolic similaritons in tapered hydrogenated amorphous silicon photonic wires

Parabolic pulses have important applications in both basic and applied sciences, such as high power optical amplification, optical communications, all-optical signal processing, etc. The generation of parabolic similaritons in tapered hydrogenated amorphous silicon photonic wires at telecom (λ ~ 1550 nm) and mid-IR (λ ≥ 2100 nm) wavelengths is demonstrated and analyzed. The self-similar theory of parabolic pulse generation in passive waveguides with increasing nonlinearity is presented. A generalized nonlinear Schrödinger equation is used to describe the coupled dynamics of optical field in the tapered hydrogenated amorphous silicon photonic wires with either decreasing dispersion or increasing nonlinearity. The impacts of length dependent higher-order effects, linear and nonlinear losses including two-photon absorption, and photon-generated free carriers, on the pulse evolutions are characterized. Numerical simulations show that initial Gaussian pulses will evolve into the parabolic pulses in the waveguide taper designed.

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si₇N₃, that possesses a high Kerr nonlinearity (2.8 × 10⁻¹³ cm² W⁻¹), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform.

Typical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooi et al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses.

Narrowband optical parametric amplification measurements in Ga0.5In0.5P photonic crystal waveguides

We report the first demonstration of narrowband parametric amplification in a chip scale semiconductor waveguide. A dispersion engineered, Ga0.5In0.5P photonic crystal waveguide with a dispersion function that exhibits two zero crossings was used with a pulsed pump placed in the normal dispersion regime while a tunable probe was scanned on either side of the pump. A peak conversion efficiency of -10 dB was obtained with a peak pump power of only 650 mW. The narrowband nature of the gain spectrum was clearly demonstrated.

Wavelength-agile near-IR optical parametric oscillator using a deposited silicon waveguide

Using a deposited hydrogenated amorphous silicon (a-Si:H) waveguide, we demonstrate ultra-broad bandwidth (60 THz) parametric amplification via four-wave mixing (FWM), and subsequently achieve the first silicon optical parametric oscillator (OPO) at near-IR wavelengths. Utilization of the time-dispersion-tuned technique provides an optical source with active wavelength tuning over 42 THz with a fixed pump wave.

Generation of coherent supercontinuum in a-Si:H waveguides: experiment and modeling based on measured dispersion profile

Hydrogenated amorphous silicon (a:Si-H) has recently been recognized as a highly nonlinear CMOS compatible photonic platform. We experimentally demonstrate the generation of a supercontinuum (SC) spanning over 500 nm in a-Si:H photonic wire waveguide at telecommunication wavelengths using femtosecond input pulse with energy lower than 5 pJ. Numerical modeling of pulse propagation in the waveguide, based on the experimentally characterized dispersion profile, shows that the supercontinuum is the result of soliton fission and dispersive wave generation. It is demonstrated that the SC is highly coherent and that the waveguides do not suffer from material degradation under femtosecond pulse illumination. Finally, a direct comparison of SC generation in c-Si and a-Si:H waveguides confirms the higher performances of a-Si:H over c-Si for broadband low power SC generation at telecommunication wavelengths.

Non-instantaneous optical nonlinearity of an a-Si:H nanowire waveguide

We use pump-probe spectroscopy and continuous wave cross-phase and cross-amplitude modulation measurements to study the optical nonlinearity of a hydrogenated amorphous silicon (a-Si:H) nanowire waveguide, and we compare the results to those of a crystalline silicon waveguide of similar dimensions. The a-Si:H nanowire shows essentially zero instantaneous two-photon absorption, but it displays a strong, long-lived non-instantaneous nonlinearity that is both absorptive and refractive. Power scaling measurements show that this non-instantaneous nonlinearity in a-Si:H scales as a third-order nonlinearity, and the refractive component possesses the opposite sign to that expected for free-carrier dispersion.

Sub-1 dB/cm submicrometer-scale amorphous silicon waveguide for backend on-chip optical interconnect

We demonstrate a submicrometer-scale hydrogenated amorphous silicon (a-Si:H) waveguide with a record low propagation loss of 0.60 ± 0.02 dB/cm because of the very low infrared optical absorption of our low defect a-Si:H film, the optimized waveguide structure and the fabrication process. The waveguide has a core with a thickness of 440 nm and a width of 780 nm that underlies a 100-nm-thick ridge structure, and is fabricated by low-cost i-line stepper photolithography and with low-temperature processing at less than 350°C, making it compatible with the backend process of complementary metal oxide semiconductor (CMOS) fabrication.

Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators

We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microring. In comparison with telecom-band optical switching in undoped crystalline silicon microrings, a-Si:H exhibits substantially higher switching speeds due to reduced impact of free-carrier processes.

Multichannel photon-pair generation using hydrogenated amorphous silicon waveguides

We demonstrate highly efficient photon-pair generation using an 8 mm long hydrogenated amorphous silicon (a-Si:H) waveguide in far-detuned multiple wavelength channels simultaneously, measuring a coincidence-to-accidental ratio as high as 400. We also characterize the contamination from Raman scattering and show it to be insignificant over a spectrum span of at least 5 THz. Our results highlight a-Si:H as a potential high-performance, CMOS-compatible platform for large-scale quantum applications, particularly those based on the use of multiplexed quantum signals.

Supercontinuum generation in hydrogenated amorphous silicon waveguides at telecommunication wavelengths

We report supercontinuum (SC) generation centered on the telecommunication C-band (1550 nm) in CMOS compatible hydrogenated amorphous silicon waveguides. A broadening of more than 550 nm is obtained in 1cm long waveguides of different widths using as pump picosecond pulses with on chip peak power as low as 4 W.

Telecom to mid-infrared spanning supercontinuum generation in hydrogenated amorphous silicon waveguides using a Thulium doped fiber laser pump source

A 1,000 nm wide supercontinuum, spanning from 1470 nm in the telecom band to 2470 nm in the mid-infrared is demonstrated in a 800 nm x 220 nm 1 cm long hydrogenated amorphous silicon strip waveguide. The pump source was a picosecond Thulium doped fiber laser centered at 1950 nm. The real part of the nonlinear parameter of this waveguide at 1950 nm is measured to be 100 ± 10 W -1m-1, while the imaginary part of the nonlinear parameter is measured to be 1.2 ± 0.2 W-1m-1. The supercontinuum is stable over a period of at least several hours, as the hydrogenated amorphous silicon waveguides do not degrade when exposed to the high power picosecond pulse train.

Nonlinear transmission properties of hydrogenated amorphous silicon core fibers towards the mid-infrared regime

The nonlinear transmission properties of hydrogenated amorphous silicon (a-Si:H) core fibers are characterized from the near-infrared up to the edge of the mid-infrared regime. The results show that this material exhibits linear losses on the order of a few dB/cm, or less, over the entire wavelength range, decreasing down to a value of 0.29 dB/cm at 2.7μm, and negligible nonlinear losses beyond the two-photon absorption (TPA) edge ~ 1.7μm. By measuring the dispersion of the nonlinear Kerr and TPA parameters we have found that the nonlinear figure of merit (FOM(NL)) increases dramatically over this region, with FOM(NL) > 20 around 2μm and above. This characterization demonstrates the potential for a-Si:H fibers and waveguides to find use in nonlinear applications extending beyond telecoms and into the mid-infrared regime.

A silicon-based widely tunable short-wave infrared optical parametric oscillator

We demonstrate a synchronously pumped optical parametric oscillator (OPO) based on parametric gain in a silicon-on-insulator photonic wire. We exploit the highly nonlinear broadband response of the photonic wire to achieve broadband single-pass amplification up to 54 dB. This allows us to construct an OPO that is tunable across a 75 nm-wide band near 2075 nm, when pumped by a picosecond pulse train at 2175 nm. Additionally we demonstrate broadband tuning across 150 nm by varying the pump wavelength and exploiting the higher order dispersion characteristics of the silicon photonic wire.

High nonlinear figure-of-merit amorphous silicon waveguides

The nonlinear response of amorphous silicon waveguides is reported and compared to silicon-on-insulator (SOI) samples. The real part of the nonlinear coefficient γ is measured by four-wave-mixing and the imaginary part of γ is characterized by measuring the nonlinear loss at different peak powers. The combination of both results yields a two-photon-absorption figure of merit of 4.9, which is more than 7 times higher than for the SOI samples. Time-resolved measurements and simulations confirm the measured nonlinear coefficient γ and show the absence of slow free-carrier effects versus ns free-carrier lifetimes in the SOI samples.

Chip-scale parametric amplifier with 11 dB gain at 1550 nm based on a slow-light GaInP photonic crystal waveguide

We report on a chip scale parametric amplifier based on a GaInP photonic crystal waveguide. The amplifier operates with both pump and signal in the 1550 nm wavelength range and offers an on-chip gain of 11 dB (5 dB including the 6 dB coupling losses) when pumped at only 800 mW. It enables us, therefore, to incorporate the many advantages of parametric amplification within photonic chips for optical communication applications.

Amorphous silicon nanowires combining high nonlinearity, FOM and optical stability

We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W(-1)m(-1). We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (i.e. ~2GW/cm(2)) over timescales of at least an hour.

Ultralow power continuous-wave frequency conversion in hydrogenated amorphous silicon waveguides

We demonstrate wavelength conversion through nonlinear parametric processes in hydrogenated amorphous silicon (a-Si:H) with maximum conversion efficiency of -13 dB at telecommunication data rates (10 GHz) using only 15 mW of pump peak power. Conversion bandwidths as large as 150 nm (20 THz) are measured in continuous-wave regime at telecommunication wavelengths. The nonlinear refractive index of the material is determined by four-wave mixing (FWM) to be n(2)=7.43×10(-13) cm(2)/W, approximately an order of magnitude larger than that of single crystal silicon.

Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides

We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of the nonlinear parameter of these photonic nanowires reveals a figure of merit larger than 2. It is observed that the nonlinear optical properties of these waveguides degrade with time, but that this degradation can be reversed by annealing the samples. A four wave mixing conversion efficiency of + 12 dB is demonstrated in a 320 Gbit/s serial optical waveform data sampling experiment in a 4 mm long photonic nanowire.

All-optical modulation using two-photon absorption in silicon core optical fibers

All-optical modulation based on degenerate and non-degenerate two-photon absorption (TPA) is demonstrated within a hydrogenated amorphous silicon core optical fiber. The nonlinear absorption strength is determined by comparing the results of pump-probe experiments with numerical simulations of the coupled propagation equations. Subpicosecond modulation is achieved with an extinction ratio of more than 4 dB at telecommunications wavelengths, indicating the potential for these fibers to find use in high speed signal processing applications.