Thulium channel waveguide laser in a monoclinic double tungstate with 70% slope efficiency

Redeposition-Free Deep Etching in Small KY(WO4)2 Samples

KY(WO₄)₂ is a promising material for on-chip laser sources. Deep etching of small KY(WO₄)₂ samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices. There are, however, several difficulties that need to be overcome before deep etching of KY(WO₄)₂ can be realized in small samples in a reproducible manner. In this paper, we address the problems of (i) edge bead formation when using thick resist on small samples, (ii) sample damage during lithography mask touchdown, (iii) resist reticulation during prolonged argon-based inductively coupled plasma reactive ion etching (ICP-RIE), and (iv) redeposited material on the feature sidewalls. We demonstrate the etching of 6.5 µm deep features and the removal of redeposited material using a wet etch procedure. This process will enable the realization of waveguides both in ion-irradiated KY(WO₄)₂ as well as thin KY(WO₄)₂ membranes transferred onto glass substrate by bonding and subsequent polishing.

Femtosecond laser direct writing of few-mode depressed-cladding waveguide lasers

We report on mirrorless laser operation of Nd:YVO₄ single- and double-cladding waveguides fabricated by femtosecond laser direct writing. Fundamental- (LP₀₁) and high-order-mode (LP₀₃, LP₀₅) guiding and lasing have been observed in waveguides with different geometries and sizes. Double-cladding waveguides exhibit good guiding and lasing performance via inheriting advantages respectively from individual single cladding. As a result, continuous-wave lasing with a threshold as low as 59 mW is obtained, depending on the optical feedback provided only by Fresnel reflections at the waveguide end faces. By using few-layer graphene as saturable absorber, passively Q-switched operation in fabricated waveguides is also achieved.

Optically pumped rare-earth-doped Al2O3 distributed-feedback lasers on silicon [Invited]

This paper reviews recent progress in the field of optically pumped rare-earth-doped channel waveguide lasers, with a focus on operation utilizing distributed-feedback resonators on silicon wafers. Rare-earth-doped amorphous aluminum oxide thin films have been deposited onto silicon wafers by RF reactive co-sputtering from metallic Al and rare-earth targets, the spectroscopy and optical gain of Er³⁺, Yb³⁺, Nd³⁺, and Tm³⁺ ions has been investigated, and the near-infrared laser transitions near 1 μm in Yb³⁺, 1.5 μm in Er³⁺, and 2 μm in Tm³⁺ and Ho³⁺ have been demonstrated. Output power between a few μW and hundreds of mW have been achieved in different waveguide geometries, and ultranarrow-linewidth laser operation has been demonstrated.

Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers

Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al₂O₃:Ho³⁺ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al₂O₃:Ho³⁺ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.

High-power thulium lasers on a silicon photonics platform

Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.55 μm wavelength, while in the 2 μm region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated. In this Letter, we report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 and 387 mW, and slope efficiencies of 14% and 23%, respectively. More than 70 dB side-mode suppression ratio is achieved for both lasers. This work extends the applicability of silicon photonic microsystems in the 2 μm region.

Femtosecond-laser-written Tm:KLu(WO4)2 waveguide lasers

Depressed-index channel waveguides with a circular and photonic crystal cladding structures are prepared in a bulk monoclinic Tm:KLu(WO₄)₂ crystal by 3D direct femtosecond laser writing. The channel waveguide structures are characterized and laser operation is achieved using external mirrors. In the continuous-wave mode, the maximum output power of 46 mW is achieved at 1912 nm corresponding to a slope efficiency of 15.2% and a laser threshold of only 21 mW. Passive Q-switching of a waveguide with a circular cladding is realized using single-walled carbon nanotubes. Stable 7 nJ/50 ns pulses are achieved at a repetition rate of 1.48 MHz. This first demonstration of ∼2  μm fs-laser-written waveguide lasers based on monoclinic double tungstates is promising for further lasers of this type doped with Tm³⁺ and Ho³⁺  ions.

Diode-pumped tape casting planar waveguide YAG/Tm:YAG/YAG ceramic laser at 2013.76 nm

We demonstrated the efficient guided laser action in a diode-pumped YAG/Tm:YAG/YAG ceramic planar waveguide fabricated by nonaqueous tape casting and solid-state reactive sintering technology for the first time, to the best of our knowledge. In the experiment, a maximum output power of 173 mW at a center wavelength of 2013.76 nm was obtained under an incident pump power of 10.3 W, corresponding to a slope efficiency of 3.0%. The beam quality M2=1.5 in a horizontal direction was measured at the highest output power.

Widely tunable short-infrared thulium and holmium doped fluorozirconate waveguide chip lasers

We report widely tunable (≈ 260 nm) Tm(3+) and Ho(3+) doped fluorozirconate (ZBLAN) glass waveguide extended cavity lasers with close to diffraction limited beam quality (M(2) ≈ 1.3). The waveguides are based on ultrafast laser inscribed depressed claddings. A Ti:sapphire laser pumped Tm(3+)-doped chip laser continuously tunes from 1725 nm to 1975 nm, and a Tm(3+)-sensitized Tm(3+):Ho(3+) chip laser displays tuning across both ions evidenced by a red enhanced tuning range of 1810 to 2053 nm. We also demonstrate a compact 790 nm diode laser pumped Tm(3+)-doped chip laser which tunes from 1750 nm to 1998 nm at a 14% incident slope efficiency, and a beam quality of M(2) ≈ 1.2 for a large mode-area waveguide with 70 µm core diameter.

Thulium channel waveguide laser with 1.6 W of output power and ∼80% slope efficiency

Laser experiments were performed on buried, ridge-type channel waveguides in 8 at.% thulium-doped, yttrium-gadolinium-lutetium co-doped potassium double tungstate. By pumping with a Ti:sapphire laser at 794 nm, 1.6 W of output power at 1.84 μm with a maximum slope efficiency of ∼80% was obtained in a laser resonator with a high output-coupling degree of 89%. To the best of our knowledge, this result represents the most efficient 2-μm channel waveguide laser to date.

Efficient diode-pumped Tm:KYW 1.9-μm microchip laser with 1 W cw output power

We report on a diode-pumped Tm:KYW microchip laser generating 1 W continuous-wave output power. The laser operates at a wavelength of 1.94 μm in the fundamental TEM(00) mode with 71% slope efficiency relative to the absorbed pump radiation and 59% slope efficiency relative to the incident pump radiation. The optical-to-optical laser efficiency is 43%.

Tri-wavelength laser generation based on neodymium doped disordered crystal waveguide

We demonstrate a tri-wavelength laser generation from a Nd-doped calcium niobium gallium garnet disordered crystal waveguide. The laser threshold obtained was 83 mW of launched pumping laser corresponding to a slope efficiency of 5.1%. According to the laser spectrum, the output light was found to be a tri-wavelength laser, with wavelengths of 1058 nm, 1060 nm and 1064 nm, respectively. The stability of the output laser was investigated, which found that the output laser was a continuous laser.

Efficient 2.9 μm fluorozirconate glass waveguide chip laser

We report a large mode-area holmium-doped ZBLAN waveguide laser operating at 2.9 μm, which was pumped by a 1150 nm diode laser. The laser is based on ultrafast laser inscribed depressed cladding waveguides fabricated in uniformly rare-earth-doped bulk glass. It has a threshold of 28 mW and produced up to 27 mW of output power at an internal slope efficiency of approximately 20%.

Highly efficient Yb3+-doped channel waveguide laser at 981 nm

Channel waveguide lasers operating at 981 nm are demonstrated in KY(1-x-y)Gd(x)Lu(y)(WO4)2:Yb3+ waveguides grown by liquid phase epitaxy onto undoped KY(WO4)2 substrates and microstructured by Ar+ beam etching. Under pumping at 934 nm of samples with different waveguide geometry and outcoupling degree, a record-high slope efficiency of 76% versus absorbed pump power and a record-high output power of 650 mW for rare-earth-ion-doped microstructured channel waveguide lasers is achieved. The laser performance is compared to that of the same devices when pumping at 981 nm and lasing near 1025 nm.

Ion-exchanged Tm3+:glass channel waveguide laser

Continuous wave laser action around 1.9 μm has been demonstrated in a Tm(3+)-doped germanate glass channel waveguide laser fabricated by ion-exchange. Laser action was observed with an absorbed power threshold of only 44 mW and a slope efficiency of up to 6.8% was achieved. Propagation loss at the lasing wavelength was measured to be 0.3 dB/cm. We believe this to be the first ion-exchanged Tm(3+)-doped glass waveguide laser.

Versatile large-mode-area femtosecond laser-written Tm:ZBLAN glass chip lasers

We report performance characteristics of a thulium doped ZBLAN waveguide laser that supports the largest fundamental modes reported in a rare-earth doped planar waveguide laser (to the best of our knowledge). The high mode quality of waveguides up to 45 um diameter (~1075 μm(2) mode-field area) is validated by a measured beam quality of M(2)~1.1 ± 0.1. Benefits of these large mode-areas are demonstrated by achieving 1.9 kW peak-power output Q-switched pulses. The 1.89 μm free-running cw laser produces 205 mW and achieves a 67% internal slope efficiency corresponding to a quantum efficiency of 161%. The 9 mm long planar chip developed for concept demonstration is rapidly fabricated by single-step optical processing, contains 15 depressed-cladding waveguides, and can operate in semi-monolithic or external cavity laser configurations.

Tm:LiYF4 planar waveguide laser at 1.9 μm

Continuous wave laser operation at 1.87 μm of liquid-phase epitaxially (LPE) grown Tm(3+)-doped YLiF(4) (Tm:YLF) layers is demonstrated. The waveguide laser delivers 560 mW by pumping with a Ti:Sapphire laser at 780 nm leading to an efficiency of 76% with respect to the absorbed pump power. This constitutes the first Tm(3+)-doped crystalline fluoride waveguide laser ever demonstrated as well as a record in efficiency and output power for an LPE grown waveguide laser operating in the 2 μm spectral range.