Wideband polarization splitter and rotator with large fabrication tolerance and simple fabrication process

Integrating inverse design and partially etched platform: an ultra-compact polarization splitter and rotator as an example

Silicon photonics devices benefit greatly from a partially etched platform and inverse design. Herein, we propose a bi-layer polarization splitter and rotator with a topology pattern and demonstrate it on a silicon-on-insulator platform. Our device exhibits a significantly reduced physical footprint of only 2µm×6µm, compared to traditional directional couplers and tapered waveguides. The device accomplishes the functions of polarization conversion and separation in such a compact design without redundant tapered or bending waveguides. The tested minimum insertion loss with the fabrication batch reaches 0.57 and 0.67 dB for TE and TM modes, respectively. The TE mode demonstrates a wider bandwidth and lower ILs than the TM modes, averaging around 1 dB from 1530 to 1565 nm. The M modes exhibit approximately 2 dB ILs at the same wavelength range, decreasing to about 1 dB between 1565 and 1580 nm. Improved designs and fabrication conditions strongly suggest the potential for further performance enhancement in the device. This successful initiative validates the exceptional performance resulting from the integration of the partially etched platform and inverse design, providing valuable insights for future photonic integrated device designs.

Passive wavelength selective polarization rotator in a hybrid waveguide platform

Polarization rotation and wavelength filtering are key functionalities used to build complex photonic integrated circuits. Both these functionalities have been demonstrated in various material and device platforms. We propose, for the first time, a fully passive wavelength selective polarization rotation in silicon nitride/amorphous silicon hybrid waveguide. We demonstrate TE0 → TM0 and TM0 → TE0 wavelength selective polarization rotator-cum-filter with a measured 3dB bandwidth of 14.8 nm. Further, we experimentally demonstrate a proof of concept for simultaneous coarse wavelength division multiplexing and polarization rotation for the first time in a passive configuration. We also show the feasibility of bandwidth engineering from 0.59 nm to 81 nm, enabled by the unique flexibility of the proposed hybrid waveguide.

Compact and broadband silicon polarization splitter-rotator using adiabaticity engineering

We propose and demonstrate a short and broadband silicon mode-conversion polarization splitter-rotator (PSR) consisting of a mode-conversion taper and an adiabatic coupler-based mode sorter both optimized by adiabaticity engineering (AE). AE is used to optimize the distribution of adiabaticity parameter over the length of the PSR, providing shortcut to adiabaticity at a shorter device length. The total length of the PSR is 85 µm. The design is compatible with standard silicon photonics platforms and requires only one patterning step. Fabricated PSR has a polarization cross talk of less than -20 dB over the entire O-band for the TE polarization and a polarization cross talk of less than -15 dB from 1267 to 1348 nm for the TM polarization. Overall, the PSR shows low polarization cross talk (-15 dB) over a bandwidth of 81 nm in the O-band. Cross-wafer measurements show that the PSR has good fabrication tolerance.

Broadband integrated polarization splitter and rotator using subwavelength grating claddings

We present a broadband integrated photonic polarization splitter and rotator (PSR) using adiabatically tapered coupled waveguides with subwavelength grating (SWG) claddings. The PSR adiabatically rotates and splits the fundamental transverse-magnetic (TM₀) input to the fundamental transverse-electric (TE₀) mode in the coupler waveguide, while passing the TE₀ input through the same waveguide. The SWGs work as an anisotropic metamaterial and facilitate modal conversions, making the PSR efficient and broadband. We rigorously present our design approaches in each section and show the SWG effect by comparing with and without the SWG claddings. The coupling coefficients in each segment explicitly show a stronger coupling effect when the SWGs are included, confirmed by the coupled-mode theory simulations. The full numerical simulation shows that the SWG-PSR operates at 1500-1750 nm (≈250 nm) wavelengths with an extinction ratio larger than 20 dB, confirmed by the experiment for the 1490-1590 nm range. The insertion losses are below 1.3 dB. Since our PSR is designed based on adiabatical mode evolution, the proposed PSR is expected to be tolerant to fabrication variations and should be broadly applicable to polarization management in photonic integrated circuits.

Fabrication tolerant and broadband polarization splitter-rotator based on adiabatic mode evolution on thin-film lithium niobate

A polarization splitter-rotator device can facilitate on-chip polarization-division multiplexing to enhance the transmission data rate. Here, we propose and experimentally demonstrate a polarization splitter-rotator based on adiabatic mode evolution on the thin-film lithium niobate platform. The measured results for a fabricated device show low insertion losses of <-0.5 dB and large extinction ratios of >20 dB over the 110-nm band. Large fabrication tolerance is also demonstrated with extinction ratios of >15 dB in the wavelength range of 1465-1630 nm for a waveguide width variation of 80 nm.

Thin-film lithium niobate polarization modulator without polarization diversity

With the development of photonic integrated circuits and optical information processing on thin-film lithium niobate (TFLN), the realization of the TFLN-based polarization device is becoming more and more crucial. Here, we demonstrate a polarization modulator on the TFLN platform without polarization diversity. Without polarization manipulation elements, the device only composes a phase modulator and a two-dimensional grating coupler. The structure features small footprint and high fabrication tolerance. The device holds promise for polarization encoding telecommunication.

On-chip beam rotators, adiabatic mode converters, and waveplates through low-loss waveguides with variable cross-sections

Photonics integrated circuitry would benefit considerably from the ability to arbitrarily control waveguide cross-sections with high precision and low loss, in order to provide more degrees of freedom in manipulating propagating light. Here, we report a new method for femtosecond laser writing of optical-fiber-compatible glass waveguides, namely spherical phase-induced multicore waveguide (SPIM-WG), which addresses this challenging task with three-dimensional on-chip light control. Fabricating in the heating regime with high scanning speed, precise deformation of cross-sections is still achievable along the waveguide, with shapes and sizes finely controllable of high resolution in both horizontal and vertical transversal directions. We observed that these waveguides have high refractive index contrast of 0.017, low propagation loss of 0.14 dB/cm, and very low coupling loss of 0.19 dB coupled from a single-mode fiber. SPIM-WG devices were easily fabricated that were able to perform on-chip beam rotation through varying angles, or manipulate the polarization state of propagating light for target wavelengths. We also demonstrated SPIM-WG mode converters that provide arbitrary adiabatic mode conversion with high efficiency between symmetric and asymmetric nonuniform modes; examples include circular, elliptical modes, and asymmetric modes from ppKTP (periodically poled potassium titanyl phosphate) waveguides which are generally applied in frequency conversion and quantum light sources. Created inside optical glass, these waveguides and devices have the capability to operate across ultra-broad bands from visible to infrared wavelengths. The compatibility with optical fiber also paves the way toward packaged photonic integrated circuitry, which usually needs input and output fiber connections.

Broadband and CMOS compatible polarization splitter-rotator based on a bi-level taper

A silicon-on-insulator polarization diversity scheme is proposed. Based on an asymmetrical evanescent coupler, a broadband and compact polarization splitter-rotator comprising mode conversion tapers and mode sorting asymmetric Y junctions is optimized with silicon dioxide upper cladding and a silicon nitride waveguide. The simulation results show mode conversion loss is less than 0.2 dB, and the extinction ratio is lower than -17dB in the wavelength range of 1.48µm to 1.67µm.

C + L band polarization rotator-splitter based on a compact S-bend waveguide mode demultiplexer

A novel high-fabrication-tolerance mode demultiplexer (MD) based on an S-bend waveguide is designed, which is used to split TE₁ mode and TE₀ mode, and convert the TE₁ mode to TE₀ mode. Based on the MD, a polarization-rotator-splitter (PRS) is demonstrated. The transmission losses of the fabricated PRS are lower than 0.5 dB and 0.6 dB for TE₀ mode and TM₀ mode, respectively, in the wavelength span of 1520-1630 nm. And the corresponding polarization extinction ratios are larger than 19.5 dB and 17.6 dB, respectively. This MD has the most compact size comparing with other experimentally demonstrated MDs used in PRS.

Effect of Process Parameters on Mode Conversion in Submicron Tapered Silicon Ridge Waveguides

The modal property and light propagation in tapered silicon ridge waveguides with different ridge heights are investigated for a silicon on insulator (SOI) platform with a 500 nm silicon (Si) thickness. Mode conversion between the transverse magnetic (TM) fundamental and higher-order transverse electric (TE) modes occurs when light is propagated in a waveguide taper. Such a conversion is due to mode hybridization resulting from the vertical asymmetry of the cross-section in the ridge waveguides. The influence of angled sidewalls and asymmetric cladding on mode conversion is also studied. It is shown that a very long taper length (adiabatic) is required for a complete conversion to take place. Conversely, such mode conversion could be suppressed by designing a short non-adiabatic taper. Our results show that significant improvement in performance metrics can be achieved by considering process parameters’ effect on mode conversion. With an optimum selection of the etching depth and accounting asymmetries due to angled sidewalls and cladding, we demonstrate an 84.7% reduction in taper length (adiabatic) for mode conversion and a 97% efficiency TM preserving taper (ultra-short). The analysis is essential for applications such as compact polarizers, polarization splitters/rotators, and tapers for TM devices.

Ultracompact silicon polarization splitter-rotator using a dual-etched and tapered coupler

The polarization splitter-rotator (PSR) plays a significant role in telecom, Datacom, and quantum circuits to meet significant requirements for polarization processing and multiplexing. We design an ultracompact PSR based on a silicon asymmetrical directional coupler (ADC). One waveguide of the ADC is gradually etched in two levels along the coupling region and the S-bend. A trapezoidal taper on the top of the dual-etched waveguide is first formed to satisfy the phase-matching condition for the TM-TE mode conversion, such that the TM mode is cross-coupled from the input waveguide without etching. Then, the etching width gradually increases in the S-bend and the following to achieve a single-mode waveguide for further removal of the residual TM mode. In this way, a high extinction ratio can be achieved for the polarization mode splitting in an ultracompact silicon ADC. For the designed PSR with a total length of about 24 µm, the simulation results reveal that the minimum extinction ratio is greater than 30, 20, or 15 dB within the bandwidth of 33, 100, or 150 nm, respectively, while the maximum polarization conversion loss is less than 0.4, 0.9, or 1 dB.

Subwavelength polarization splitter-rotator with ultra-compact footprint

An ultra-compact polarization splitter-rotator with a discretized subwavelength nanostructure is demonstrated on the silicon-on-insulator platform. The device has a length of only 7.92 μm. For TE₀-TE₀, a low insertion loss (<0.2  dB), low crosstalk (<-20  dB), and high extinction ratio (>40  dB) are achieved over a broad wavelength range from 1500 nm to 1600 nm. For TM₀-TE₀, the insertion loss is lower than 1 dB over 40 nm bandwidth (1530-1570 nm). The crosstalk is lower than -25  dB, and the extinction ratio is larger than 20 dB, from 1500 nm to 1600 nm.

Sub-wavelength grating-assisted polarization splitter-rotators for silicon-on-insulator platforms

We propose and demonstrate broadband, entirely mode-evolution-based, polarization splitter-rotators (PSR) using sub-wavelength grating (SWG) assisted adiabatic waveguides for two SOI platforms. Our PSRs are more compact than previously demonstrated entirely mode-evolution-based designs. The devices were fabricated using two fabrication processes and, in both cases, the measured spectra show close matches to the simulation results. One of the processes uses standard optical lithography and, hence, this is the first time that an SWG-based PSR has been experimentally implemented using such a process. Finally, measurements for arbitrary input polarizations on an active, automated polarization receiver, that uses one of our PSRs, are also presented.

Ultracompact, high extinction ratio polarization beam splitter-rotator based on hybrid plasmonic-dielectric directional coupling

A polarization beam splitter-rotator based on asymmetric directional coupling is proposed. An ultrashort cross-polarization coupling length of 7.7 μm is achieved by manipulating the optical field distribution via the plasmonic effect, which is the shortest one reported so far, to the best of our knowledge. At the wavelength of 1.55 μm, the extinction ratios are as high as 50.9 dB and 28.2 dB for fundamental transverse magnetic (TM₀) and transverse electric (TE₀) polarizations, respectively, and the corresponding insertion losses are 1.545 dB and 0.037 dB. In addition, the TM₀-to-TE₀ polarization conversion efficiency is higher than 95% within a bandwidth of 70 nm.

Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure

In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward bias to exploit the plasma dispersion effect and modify the phase of both the TE and TM mode. The other arm of the MZI is driven in reverse bias to exploit the Pockels effect which affects only the TE mode. By adjusting the voltages of the two phase shifters, a different interference condition can be set for the TE and the TM modes thereby splitting them at the output of the MZI. By adjusting the voltages, the very tight fabrication tolerances known for fully passive PBS are eased. The experimental results show that an extinction ratio better than 15 dB and an on-chip loss of 3.5 dB over the full C-band (1530-1565nm) are achieved.

Ultracompact and high efficient silicon-based polarization splitter-rotator using a partially-etched subwavelength grating coupler

On-chip polarization manipulation is pivotal for silicon-on-insulator material platform to realize polarization-transparent circuits and polarization-division-multiplexing transmissions, where polarization splitters and rotators are fundamental components. In this work, we propose an ultracompact and high efficient silicon-based polarization splitter-rotator (PSR) using a partially-etched subwavelength grating (SWG) coupler. The proposed PSR consists of a taper-integrated SWG coupler combined with a partially-etched waveguide between the input and output strip waveguides to make the input transverse-electric (TE) mode couple and convert to the output transverse-magnetic (TM) mode at the cross port while the input TM mode confine well in the strip waveguide during propagation and directly output from the bar port with nearly neglected coupling. Moreover, to better separate input polarizations, an additional tapered waveguide extended from the partially-etched waveguide is also added. From results, an ultracompact PSR of only 8.2 μm in length is achieved, which is so far the reported shortest one. The polarization conversion loss and efficiency are 0.12 dB and 98.52%, respectively, together with the crosstalk and reflection loss of -31.41/-22.43 dB and -34.74/-33.13 dB for input TE/TM mode at wavelength of 1.55 μm. These attributes make the present device suitable for constructing on-chip compact photonic integrated circuits with polarization-independence.

High-extinction-ratio silicon polarization beam splitter with tolerance to waveguide width and coupling length variations

We demonstrate a compact silicon polarization beam splitter (PBS) based on grating-assisted contradirectional couplers (GACCs). Over 30-dB extinction ratios and less than 1-dB insertion losses are achieved for both polarizations. The proposed PBS exhibits tolerance in width variation, and the polarization extinction ratios remain higher than 20 dB for both polarizations when the width variation is adjusted from + 10 to -10 nm. Benefiting from the enhanced coupling by the GACCs, the polarization extinction ratio can be kept higher than 15 dB and the insertion loss is lower than 2 dB for both polarizations when the coupling length varies from 30.96 to 13.76 μm.

Highly efficient silicon optical polarization rotators based on mode order conversions

We design and demonstrate the novel silicon optical polarization rotators (PRs) based on the TM(0)-TE(n)-TE(0) mode conversions inside the waveguide. The TM(0)-TE(n) mode converters are realized by the mode hybridization of the tapered rib waveguides. The TE(n)-TE(0) mode converters based on the beam shaping method are followed to complete the PRs function. By using the TE(1), TE(2), and TE(3) mode as the transitional mode, the fabricated PRs show the insert losses of less than 0.4, 0.5, and 1 dB, respectively. The corresponding polarization extinction ratios of larger than 21, 18, and 23 dB, over a wavelength range of 100 nm.

Design of a compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides

A compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides is proposed and characterized. For the input TM mode, it is first transferred into the cross strip waveguide using a tapered directional coupler (DC), and then efficiently rotated to the corresponding TE mode using an L-shaped bending polarization rotator (PR). Finally, the TE mode for slot waveguide at the output end is obtained with the help of a strip-to-slot mode converter. By contrast, for the input TE mode, it almost passes through the slot waveguide directly and outputs at the bar end with nearly neglected coupling due to a large mode mismatch. Moreover, an additional S-bend connecting the tapered DC and bending PR is used to enhance the performance. Results show that a total device length of 19.6 μm is achieved, where the crosstalk (CT) and polarization conversion loss are, respectively -26.09 and 0.54 dB, for the TM mode, and the CT and insertion loss are, respectively, -22.21 and 0.41 dB, for the TE mode, both at 1.55 μm. The optical bandwidth is approximately 50 nm with a CT<-20  dB. In addition, fabrication tolerances and field evolution are also presented.

300 nm bandwidth adiabatic SOI polarization splitter-rotators exploiting continuous symmetry breaking

Adiabatic polarization splitter-rotators are investigated exploiting continuous symmetry breaking thereby achieving significant device size and losses reduction in a single mask fabrication process for both SOI channel and ridge waveguides. A crosstalk lower than -25 dB is expected over 300nm bandwidth, making the device suitable for full grid CWDM and diplexer/triplexer FTTH applications at 1310, 1490 and 1550nm.

Symmetrical polarization splitter/rotator design and application in a polarization insensitive WDM receiver

In integrated photonics, the design goal of a polarization splitter/rotator (PSR) has been separating the TE0 and TM0 modes in a waveguide. This is a natural choice. But in theory, a PSR only needs to project the incoming State Of Polarization (SOP) orthogonally to its output ports, using any orthogonal mode basis set in the fiber. In this article, we introduce a novel PSR design that alternatively takes the linear combination of TE0 and TM0 (TE0 +/- TM0) as orthogonal bases. By contrast, existing approaches exclusively use TE0 and TM0 as their basis set. The design is based on two symmetric and robust structures: a bi-layer taper and a Y-junction, and involves no bends. To prove the concept, we incorporated it into a four-channel polarization insensitive wavelength division multiplexing (PI-WDM) receiver fabricated in a standard CMOS Si photonics process. 40 Gb/s data rate and 0.7 +/- 0.2 dB polarization dependent loss (PDL) is demonstrated on each channel. Lastly, we propose an improved PSR design with 12 μm device length, < 0.1 dB PDL, < 0.4 dB insertion loss and < 0.05 dB wavelength dependence across C-band for both polarizations. Overall, our PSR design concept is simple, easy to realize and presents a new perspective for future PSR designs.

A silicon-on-insulator polarization diversity scheme in the mid-infrared

We propose a silicon-on-insulator (SOI) polarization diversity scheme in the mid-infrared wavelength range. In consideration of absorption loss in silicon dioxide (SiO₂), the polarization splitter-rotator (PSR) is designed and optimized with silicon nitride (SiN) upper-cladding and SiO₂ lower-cladding. This asymmetry allows the PSR, which consists of mode-conversion tapers and subsequent mode-sorting asymmetric Y-junctions, to be fabricated with a simple one-step etching process. Simulation shows that our PSR has good performance with low mode conversion loss (< 0.25 dB) and low crosstalk (< -18 dB) in a very large wavelength range from 4.0 μm to 4.4 μm. The PSR also exhibits large fabrication tolerance with respect to the size deviations in waveguide width, height and refractive index of the upper-cladding. Additionally, PSR devices based on Y-junctions with SiO₂ upper-cladding, and SiN upper- and lower-claddings are designed for potential applications at shorter and longer wavelengths, respectively. These PSR devices could facilitate the development of silicon photonic devices in the mid-infrared.

Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon

Vanadium dioxide (VO(2)) is a metal-insulator transition (MIT) oxide recently used in plasmonics, metamaterials, and reconfigurable photonics. Because of the MIT, VO(2)shows great change in its refractive index allowing for ultra-compact devices with low power consumption. We theoretically demonstrate a transverse electric (TE) and a transverse magnetic (TM) pass polarizer with an ultra-compact length of only 1 μm and tunable using the MIT of the VO₂. During the insulating phase, both devices exhibit insertion losses below 2 dB at 1550 nm. Changing to the metallic phase, the unwanted polarization is attenuated above 15 dB while insertion losses are kept below 3 dB. Broadband operation over a range of 60 nm is also achieved.

Efficient silicon polarization rotator based on mode-hybridization in a double-stair waveguide

We present a compact silicon polarization rotator (PR) based on mode-hybridization by breaking the cross-sectional symmetry of a double-stair waveguide. The device fabrication is fully compatible with the commonly used silicon photonics processes with no extra masks required. The dependence of device performance on the double-stair waveguide dimensions is investigated using FDTD simulations. Characterizations of the fabricated devices reveal that the 23-μm-long PR exhibits a polarization extinction ratio (PER) of >17 dB in the wavelength range of 1500-1540 nm. The maximum PER exceeds 30 dB at 1518 nm.

Ultracompact silicon-on-insulator polarization rotator for polarization-diversified circuits

We present an ultracompact (15.3 μm long) and high-efficiency silicon-on-insulator polarization rotator designed for polarization-diversified circuits. The rotator is comprised of a bilevel-tapered TM0-to-TE1 mode converter and a novel bent-tapered TE1-to-TE0 mode converter. The rotator has a simulated polarization conversion loss lower than 0.2 dB and a polarization-extinction ratio larger than 25 dB over a wavelength range of 80 nm around 1550 nm. The rotator has a SiO2 top-cladding and can be fabricated in a CMOS-compatible process.

Novel ultra-broadband polarization splitter-rotator based on mode-evolution tapers and a mode-sorting asymmetric Y-junction

A novel silicon-on-insulator (SOI) polarization splitter-rotator is proposed based on mode-evolution tapers and a mode-sorting asymmetric Y-junction. The tapers are designed to adiabatically convert the input TM0 mode into the TE1 mode, which will evolve into the TE0 mode in the wide output arm while the input TE0 mode excites the TE0 mode in the narrow arm. The numerical simulation results show that the mode conversion efficiency increases with the lengths of the tapers and the Y-junction for the output waveguide widths in a large range. This proposed device has < 0.4 dB insertion loss with > 12 dB extinction ratio in an ultra-broad wavelength range from 1350 nm to 1750 nm. With such a broad operating bandwidth, this device offers potential applications for polarization diversity operating across every communication bands. Fabrication tolerance analysis is also performed in terms of the device width variation, the slab height variation and the variation of the upper-cladding refractive index.

Polarization-insensitive wavelength conversion of 40 Gb/s NRZ-DPSK signals in a silicon polarization diversity circuit

Polarization insensitive wavelength conversion of a 40 Gb/s non-return-to-zero (NRZ) differential phase-shift keying (DPSK) data signal is demonstrated using four-wave mixing (FWM) in a silicon nanowire circuit. Polarization independence is achieved using a diversity circuit based on polarization rotators and splitters, which is fabricated by a simple process on the silicon-on-insulator (SOI) platform. Error-free performance is achieved with only 0.5 dB of power penalty compared to the wavelength conversion of a signal with well optimized input polarization. Additionally, data transmission over 161 km standard single-mode fiber (SSMF) is demonstrated at 40 Gb/s using optical phase conjugation (OPC) in the proposed circuit.

Compact two-mode (de)multiplexer based on symmetric Y-junction and multimode interference waveguides

A compact two-mode (de)multiplexer [(DE)MUX] based on symmetric Y-junction and multimode interference (MMI) waveguides was designed by 3D beam propagation method (BPM). The phase evolution in the structure was discussed in detail. Simulations show that the optical bandwidth is as large as 100 nm (1500 nm ~1600 nm). The two-mode (DE)MUX is very compact compared with the other kind of mode (DE)MUX. The length of the structure is only 48.8 μm. Simulation also shows the fabrication tolerance is as large as ± 75 nm.

Polarization rotator-splitters in standard active silicon photonics platforms

We demonstrate various silicon-on-insulator polarization management structures based on a polarization rotator-splitter that uses a bi-level taper TM0-TE1 mode converter. The designs are fully compatible with standard active silicon photonics platforms with no new levels required and were implemented in the IME baseline and IME-OpSIS silicon photonics processes. We demonstrate a polarization rotator-splitter with polarization crosstalk < -13 dB over a bandwidth of 50 nm. Then, we improve the crosstalk to < -22 dB over a bandwidth of 80 nm by integrating the polarization rotator-splitter with directional coupler polarization filters. Finally, we demonstrate a polarization controller by integrating the polarization rotator-splitters with directional couplers, thermal tuners, and PIN diode phase shifters.

Design of a SiO₂ top-cladding and compact polarization splitter-rotator based on a rib directional coupler

A compact polarization splitter-rotator based on a silicon-on-insulator rib asymmetrical directional coupler with SiO2 top-cladding is proposed. Unlike previously reported PSRs which specifically required the top-cladding material to be different from the bottom cladding in order to break the symmetry of the waveguide cross-section, our proposed PSR has no such limitation on the top-cladding due to the horizontal asymmetry of the rib waveguide. In addition, the device is highly compact and has a total length as short as 24 μm. Numerical simulation shows that a high conversion efficiency of ~97% is obtained at the wavelength of 1550 nm. With the width variation of ± 15 nm and the gap variation of ± 50 nm, the PSR still has high ER of 12 dB at the cross-port, showing large fabrication tolerance. This device can be cascaded to improve the performance at the through port and an example of a two-stage PSR is presented. The mode conversion between the strip waveguide and the rib waveguide is also discussed.

Four-port integrated polarizing beam splitter

In this Letter, we report on the first integrated four-port polarizing beam splitter. The device operates on the principle of mode evolution and was implemented in a silicon-on-insulator silicon photonics platform and fabricated on a 300 mm CMOS line using 193 nm optical immersion lithography. The adiabatic transition forming of the structure enabled over a 150 nm bandwidth from λ~1350 to λ~1500  nm, achieving a cross-talk level below -10  dB over the entire band.

Silicon based polarization insensitive filter for WDM-PDM signal processing

We propose and fabricate a novel circuit that combines two two-dimensional (2D) grating couplers and a microring resonator (MRR). According to the polarization states, one 2D grating coupler first splits the input signals into two orthogonal paths, which co-propagate in the loop and share a common MRR, and then the two paths are combined together by the other 2D grating coupler. The proposed circuit is polarization insensitive and can be used as a polarization insensitive filter. For demonstration, the wavelength division and polarization division multiplexing (WDM-PDM) non return-to-zero differential-phase-shift-keying (NRZ-DPSK) signals can be demodulated successfully. The bit error ratio measurements show an error free operation, reflecting the good performance and the practicability.

Experimental demonstration of an integrated hybrid plasmonic polarization rotator

We experimentally demonstrate an ultracompact (3.7 μm long) hybrid plasmonic polarization rotator operating around 1.55 μm for integrated silicon photonics circuits. The TM polarization of a silicon waveguide is rotated to the TE polarization with insertion losses as low as 1.5 dB and polarization extinction ratios larger than 13.5 dB.

Ultrahigh-efficiency apodized grating coupler using fully etched photonic crystals

We present an efficient method to design apodized grating couplers with Gaussian output profiles for efficient coupling between standard single mode fibers and silicon chips. An apodized grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform is designed, and fabricated in a single step of lithography and etching. An ultralow coupling loss of -1.74 dB (67% coupling efficiency) with a 3 dB bandwidth of 60 nm is experimentally measured.

Integrated polarization rotator/converter by stimulated Raman adiabatic passage

We proposed a polarization rotator inspired by stimulated Raman adiabatic passage model from quantum optics, which is composed of a signal waveguide and an ancillary waveguide. The two orthogonal modes in signal waveguide and the oblique mode in ancillary waveguide form a Λ-type three-level system. By controlling the width of signal waveguide and the gap between two waveguides, adiabatic conversion between two orthogonal modes can be realized in the signal waveguide. With such adiabatic passage, polarization conversion is completed within 150 μm length, with the efficiencies over 99% for both conversions between horizontal polarization and vertical polarization. In addition, such a polarization rotator is quite robust against fabrication error, allowing a wide range of tolerances for the rotator geometric parameters. Our work is not only significative to photonic simulations of coherent quantum phenomena with engineered photonic waveguides, but also enlightens the practical applications of these phenomena in optical device designs.