Experimental demonstration of an integrated hybrid plasmonic polarization rotator

Broadband and highly efficient integrated polarization rotator designed by topology optimization

Being a fundamental block for systems that utilize polarization-diversity schemes, such as coherent transceivers, polarization rotators allow the conversion of polarization states. In this work, we present an ultra-compact efficient silicon polarization rotator designed via an inverse design method. By optimizing a topology based on the adjoint method, we designed polarization rotators for several combinations of lengths and widths. Simulation results show that the best optimized device presents a polarization conversion loss of 0.67 dB and cross talk of -18dB for a central wavelength of 1550 nm. These results were achieved for a 7 µm long and 1.2 µm width device. Furthermore, the high coupling efficiency and low cross talk were achieved for a bandwidth exceeding 100 nm. The polarization conversion loss and cross talk were maintained below 0.82 dB and -18dB, respectively, for a band ranging from 1500 nm to 1600 nm.

Modular nonlinear hybrid plasmonic circuit

Photonic integrated circuits (PICs) are revolutionizing nanotechnology, with far-reaching applications in telecommunications, molecular sensing, and quantum information. PIC designs rely on mature nanofabrication processes and readily available and optimised photonic components (gratings, splitters, couplers). Hybrid plasmonic elements can enhance PIC functionality (e.g., wavelength-scale polarization rotation, nanoscale optical volumes, and enhanced nonlinearities), but most PIC-compatible designs use single plasmonic elements, with more complex circuits typically requiring ab initio designs. Here we demonstrate a modular approach to post-processes off-the-shelf silicon-on-insulator (SOI) waveguides into hybrid plasmonic integrated circuits. These consist of a plasmonic rotator and a nanofocusser, which generate the second harmonic frequency of the incoming light. We characterize each component's performance on the SOI waveguide, experimentally demonstrating intensity enhancements of more than 200 in an inferred mode area of 100 nm², at a pump wavelength of 1320 nm. This modular approach to plasmonic circuitry makes the applications of this technology more practical.

Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO2/silicon technology

A tunable transverse electric (TE) pass polarizer is demonstrated based on hybrid vanadium dioxide/silicon (VO₂/Si) technology. The 20-μm-long TE pass polarizer exploits the phase transition of the active VO₂ material to control the rejection of the unwanted transverse magnetic (TM) polarization. The device features insertion losses below 1 dB at static conditions and insertion losses of 5.5 dB and an attenuation of TM polarization of 19 dB in the active state for a wavelength range between 1540 nm and 1570 nm. To the best of our knowledge, this is the first time that tunable polarizers compatible with Si photonics are demonstrated.

Integrated InP polarization rotator using the plasmonic effect

we report on an integrated InP based polarization rotator scheme using the plasmonic effect. It operates as a half-wave retarder in ridge waveguide structure. The rotation angle of the eigenmode axes of the half-wave retarder waveguide is determined by the position off a bottom corner of a metal layer placed above the waveguide core in the upper cladding region. The simple rotator structure enables an easy and tolerant fabrication process. The length of the fabricated device is less than 50 μm, and a polarization extinction ratio (PER) of 20 dB has been achieved.

Plasmonic in-plane total internal reflection: azimuthal polarized beam focusing and application

Due to the characteristic of surface plasmon polaritons (SPP) excitation, radial polarized beams and circular polarized beams are widely used for plasmonic lens and plasmonic near field focusing. In this paper, a plasmonic lens based on in-plane total internal reflection (TIR) scheme is proposed and numerically demonstrated to achieve the simultaneous nanofocusing of azimuthal and radial polarized beams. By means of the in-plane TIR mechanism, the operation bandwidth of lens ranges from visible light to mid-infrared. The proposed structure has been utilized in the design of a plasmonic liquid refractive index sensor and is expected to find potential applications in near-field optical energy focusing, near-field imaging and sensing.

Ultra-compact polarization rotation in integrated silicon photonics using digital metamaterials

Polarization controlling devices such as polarization splitters and rotators are critical elements in integrated-photonic circuits that function via polarization-diversity schemes. Here, we present the design of an ultra-compact nanophotonic-polarization rotator (NPR) that rotates the polarization state from TE to TM with a simulated extinction ratio of 23dB over a coupling length of 5µm and an operating bandwidth of 40nm. This all-silicon device can be fabricated in a single lithography step and we have fabricated and characterized a preliminary device exhibiting 9dB extinction ratio. To emphasize the generality of our methodology, we also designed a NPR that can rotate the polarization state from TM to TE as well. A small device footprint is enabled by the evanescent coupling of guided modes enabled by computationally designed digital metamaterials.

Compact polarization rotator for silicon-based cross-slot waveguides using subwavelength gratings

A compact and broadband polarization rotator (PR) for silicon-based cross-slot waveguides using subwavelength gratings (SWGs) is proposed and analyzed. To significantly break the symmetry of the waveguide structure, the diagonal regular Si wires of the cross-slot waveguides are replaced with the full etching SWGs. Moreover, the special properties of the SWGs-whose effective index is adjustable-can effectively enhance the modal birefringence between the two lowest-order hybrid modes, resulting in a more compact device. By utilizing interference effect of the hybrid modes, both transverse electric to transverse magnetic (TE-to-TM) and TM-to-TE conversion can be efficiently realized. Numerical results show that a PR of 12.6 μm in length at a wavelength of 1.55 μm is achieved, where the polarization conversion efficiency (PCE) and insertion loss (IL) are, respectively, 97.2% and 0.71 dB, and the reflection loss is below -20.5  dB for both cases. Moreover, a wide bandwidth of ∼260  nm for both polarizations is obtained for keeping the PCE over 90% and IL below 1 dB. In addition, fabrication tolerances to the structural parameters are analyzed in detail, and field evolution along the propagation distance is also presented.

Polarization rotator based on augmented low-index-guiding waveguide on silicon nitride/silicon-on-insulator platform

Using a newly proposed augmented low-index-guiding scheme with silicon nitride/silicon dual-core waveguide, we have designed, fabricated, and characterized a transverse electric (TE) to transverse magnetic (TM) and TM-to-TE compact polarization rotator. The polarization rotation is realized in an asymmetric directional coupler. The measured peak conversion efficiencies for the TE-to-TM and TM-to-TE rotations are approximately 97%. The measured polarization extinction ratio for the TE-to-TM rotation is greater than 20 dB over 50-nm bandwidth, while for the TM-to-TE rotation it is greater than 15 dB over the C-band.

Design of a compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides

A compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides is proposed and characterized. For the input TM mode, it is first transferred into the cross strip waveguide using a tapered directional coupler (DC), and then efficiently rotated to the corresponding TE mode using an L-shaped bending polarization rotator (PR). Finally, the TE mode for slot waveguide at the output end is obtained with the help of a strip-to-slot mode converter. By contrast, for the input TE mode, it almost passes through the slot waveguide directly and outputs at the bar end with nearly neglected coupling due to a large mode mismatch. Moreover, an additional S-bend connecting the tapered DC and bending PR is used to enhance the performance. Results show that a total device length of 19.6 μm is achieved, where the crosstalk (CT) and polarization conversion loss are, respectively -26.09 and 0.54 dB, for the TM mode, and the CT and insertion loss are, respectively, -22.21 and 0.41 dB, for the TE mode, both at 1.55 μm. The optical bandwidth is approximately 50 nm with a CT<-20  dB. In addition, fabrication tolerances and field evolution are also presented.

Mode-evolution-based polarization rotation and coupling between silicon and hybrid plasmonic waveguides

Hybrid plasmonic (HP) modes allow strong optical field confinement and simultaneously low propagation loss, offering a potentially compact and efficient platform for on-chip photonic applications. However, their implementation is hampered by the low coupling efficiency between dielectric guided modes and HP modes, caused by mode mismatch and polarization difference. In this work, we present a mode-evolution-based polarization rotation and coupling structure that adiabatically rotates the TE mode in a silicon waveguide and couples it to the HP mode in a strip silicon-dielectric-metal waveguide. Simulation shows that high coupling factors of 92%, 78%, 75%, and 73% are achievable using Ag, Au, Al, and Cu as the metal cap, respectively, at a conversion length of about 5 μm. For an extremely broad wavelength range of 1300–1800 nm, the coupling factor is >64% with a Ag metal cap, and the total back-reflection power, including all the mode reflections and backscattering, is below −40 dB, due to the adiabatic mode transition. Our device does not require high-resolution lithography and is tolerant to fabrication variations and imperfections. These attributes together make our device suitable for optical transport systems spanning all telecommunication bands.

On-chip plasmonic waveguide optical waveplate

Polarization manipulation is essential in almost every photonic system ranging from telecommunications to bio-sensing to quantum information. This is traditionally achieved using bulk waveplates. With the developing trend of photonic systems towards integration and miniaturization, the need for an on-chip waveguide type waveplate becomes extremely urgent. However, this is very challenging using conventional dielectric waveguides, which usually require complex 3D geometries to alter the waveguide symmetry and are also difficult to create an arbitrary optical axis. Recently, a waveguide waveplate was realized using femtosecond laser writing, but the device length is in millimeter range. Here, for the first time we propose and experimentally demonstrate an ultracompact, on-chip waveplate using an asymmetric hybrid plasmonic waveguide to create an arbitrary optical axis. The device is only in several microns length and produced in a flexible integratable IC compatible format, thus opening up the potential for integration into a broad range of systems.

Utilization of Field Enhancement in Plasmonic Waveguides for Subwavelength Light-Guiding, Polarization Handling, Heating, and Optical Sensing

Plasmonic nanostructures have attracted intensive attention for many applications in recent years because of the field enhancement at the metal/dielectric interface. First, this strong field enhancement makes it possible to break the diffraction limit and enable subwavelength optical waveguiding, which is desired for nanophotonic integrated circuits with ultra-high integration density. Second, the field enhancement in plasmonic nanostructures occurs only for the polarization mode whose electric field is perpendicular to the metal/dielectric interface, and thus the strong birefringence is beneficial for realizing ultra-small polarization-sensitive/selective devices, including polarization beam splitters, and polarizers. Third, plasmonic nanostructures provide an excellent platform of merging electronics and photonics for some applications, e.g., thermal tuning, photo-thermal detection, etc. Finally, the field enhancement at the metal/dielectric interface helps a lot to realize optical sensors with high sensitivity when introducing plasmonic nanostrutures. In this paper, we give a review for recent progresses on the utilization of field enhancement in plasmonic nanostructures for these applications, e.g., waveguiding, polarization handling, heating, as well as optical sensing.

Polarization rotation and coupling between silicon waveguide and hybrid plasmonic waveguide

We present a polarization rotation and coupling scheme that rotates a TE(0) mode in a silicon waveguide and simultaneously couples the rotated mode to a hybrid plasmonic (HP(0)) waveguide mode. Such a polarization rotation can be realized with a partially etched asymmetric hybrid plasmonic waveguide consisting of a silicon strip waveguide, a thin oxide spacer, and a metal cap made from copper, gold, silver or aluminum. Two implementations, one with and one without the tapering of the metal cap are presented, and different taper shapes (linear and exponential) are also analyzed. The devices have large 3 dB conversion bandwidths (over 200 nm at near infrared) and short length (< 5 μm), and achieve a maximum coupling factor of ∼ 78% with a linearly tapered silver metal cap.

Recent advances in silicon-based passive and active optical interconnects

Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.

Ultracompact silicon-on-insulator polarization rotator for polarization-diversified circuits

We present an ultracompact (15.3 μm long) and high-efficiency silicon-on-insulator polarization rotator designed for polarization-diversified circuits. The rotator is comprised of a bilevel-tapered TM0-to-TE1 mode converter and a novel bent-tapered TE1-to-TE0 mode converter. The rotator has a simulated polarization conversion loss lower than 0.2 dB and a polarization-extinction ratio larger than 25 dB over a wavelength range of 80 nm around 1550 nm. The rotator has a SiO2 top-cladding and can be fabricated in a CMOS-compatible process.

Measurement of a compact colorless 3 dB hybrid plasmonic directional coupler

We fabricated and measured a compact 3 dB hybrid plasmonic directional coupler for silicon photonics integrated circuits with a length of 21.2 μm. The coupler has a 50∶50 coupling ratio over a spectral bandwidth of more than 100 nm around a wavelength of 1.55 μm and has an insertion loss of less than 1 dB.

Silicon-loaded surface plasmon polariton waveguides for nanosecond thermo-optical switching

A MHz-bandwidth thermo-optical (TO) plasmonic switch operating at telecommunication wavelengths and based on a hybrid solid-state silicon-loaded surface plasmon polariton waveguide design is demonstrated numerically. The nanosecond (ns) TO response of the switch is due to the high thermal conductivities of the employed materials and we demonstrate specifically a 10 dB extinction ratio in the time-dependent switch transmission which features a pulsed 1 ns rise time followed by a 25 ns fall time when the switch is photo-thermally activated by a ns pulse at 532 nm wavelength.

Compact polarization rotator for silicon-based slot waveguide structures

A compact polarization rotator (PR) for silicon-based slot waveguides is proposed, where the slot region including the upper claddings is filled with liquid crystals (LCs). With the anisotropic features of the LCs, the transverse field components of eigenmodes have almost identical amplitudes, leading to a high modal hybridness. As a result, the TE (TM) polarization can be rotated efficiently to the TM (TE) polarization within a short length. The numerical results show that a PR 11.3 μm in length at an operating wavelength of 1.55 μm is achieved with an extinction ratio (ER) (insertion loss) of 12.6 (0.22) dB for TE-to-TM and 11.5 (0.30) dB for TM-to-TE. Moreover, the optical bandwidth for TE-to-TM (TM-to-TE) mode must be ∼64(∼29)  nm to keep the ER over 12 (10) dB. In addition, fabrication tolerances to the structural parameters are investigated, and field evolution along the propagation distance through the PR is also demonstrated.

Dihedron dielectric loaded surface plasmon athermal polarization converter

We investigate numerically a novel plasmonic polarization converter relying on the excitation of a so-called dihedron dielectric loaded plasmon polariton. The dihedron dielectric loaded waveguide consists of a dielectric ridge implemented at the inner corner of a metal-coated dielectric step. For a dielectric ridge with a square cross section, the plasmon polariton modes supported by each side of the metallized step hybridize to create supermodes with crossed polarizations. We show that the two supermodes can be operated in a dual-mode interferometer configuration to perform an efficient (24 dB) TE-TM/TM-TE polarization conversion over typical distances below 30 μm at telecommunications wavelengths. In addition, on the basis of the thermo-optical properties of our device, we find that the dihedron plasmonic polarization converter is temperature insensitive.