Continuous-wave operation of DFB laser diodes based on GaN using 10$^{\rm th}$th-order laterally coupled surface gratings

High-power distributed feedback lasers with high-order surface curved gratings

A novel, to the best of our knowledge, broad-area distributed feedback laser with high-order surface curved gratings has been fabricated based on standard near ultraviolet lithography. The characteristics of increasing output power and mode selection are achieved simultaneously by using a broad-area ridge as well as an unstable cavity structure composed of curved gratings and a high-reflectivity coated rear facet. Suppression of high-order lateral modes is realized by setting current injection/non-injection regions and asymmetric waveguides. This DFB laser emitting around 1070 nm has achieved a spectral width of 0.138 nm and a maximum output power of 915 mW kink-free optical power. The threshold current and side-mode suppression ratio of the device are 370 mA and 33 dB, respectively. The simple manufacturing process and stable performance give this high-power laser broad application prospects in the fields of light detection and ranging, laser pumps, optical disk access, etc.

GaN Laser Diode Technology for Visible-Light Communications

Gallium nitride (GaN) laser diodes (LDs) are considered for visible light communications (VLC) in free space, underwater, and in plastic optical fibers (POFs). A review of recent results is presented, showing high-frequency operation of AlGaInN laser diodes with data transmission rates up to 2.5 Gbit/s in free space and underwater and high bandwidths of up to 1.38 GHz through 10 m of plastic optical fiber. Distributed feedback (DFB) GaN LDs are fabricated to achieve single-frequency operation. We report on single-wavelength emissions of GaN DFB LDs with a side-mode suppression ratio (SMSR) in excess of 35 dB.

Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings

This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated.

Compact fiber-ring resonator for blue external cavity diode laser stabilization

We demonstrate a compact and low-cost all-fiber-based locking setup for frequency-noise suppression of a 420 nm external-cavity diode laser. Frequency noise reduction in the 100 Hz to 800 kHz range is demonstrated up to 40 dB associated with a linewidth narrowing from 850 kHz to 20 kHz for 10 ms integration time. This simple locking scheme might be implemented for a large range of wavelengths and can be integrated on a small footprint for embedded applications requiring narrow linewidth blue laser diodes.

High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) grating

Single-frequency blue laser sources are of interest for an increasing number of emerging applications but are still difficult to implement and expensive to fabricate and suffer from poor robustness. Here a novel and universal grating design to realize distributed optical feedback in visible semiconductor laser diodes (LDs) was demonstrated on a semipolar InGaN LD, and its unique effect on the laser performance was investigated. For the first time, to the best of our knowledge, a low threshold voltage, record-high power output, and ultra-narrow single-mode lasing were simultaneously obtained on the new laser structure with a thinner p-GaN layer and a third-order phase-shifted embedded dielectric grating. Under continuous-wave operation, such 450 nm lasers achieved 35 dB side-mode suppression ratio, less than 2 pm FWHM, and near 400 mW total output power at room temperature.