Integrated silicon and silicon nitride photonic circuits on flexible substrates

Flexible waveguide integrated thermo-optic switch based on TiO2 platform

Mechanically flexible photonic devices are critical components of novel bio-integrated optoelectronic and high-end wearable systems, in which thermo-optic switches (TOSs) as optical signal control devices are crucial. In this paper, flexible titanium oxide (TiO₂) TOSs based on a Mach-Zehnder interferometer (MZI) structure were demonstrated around 1310 nm for, it is believed, the first time. The insertion loss of flexible passive TiO₂ 2 × 2 multi-mode interferometers (MMIs) is -3.1 dB per MMI. The demonstrated flexible TOS achieves power consumption (Pπ) of 0.83 mW, compared with its rigid counterpart, for which Pπ is decreased by a factor of 18. The proposed device could withstand 100 consecutive bending operations without noticeable degradation in TOS performance, indicating excellent mechanical stability. These results provide a new perspective for designing and fabricating flexible TOSs for flexible optoelectronic systems in future emerging applications.

Wearable Triboelectric/Aluminum Nitride Nano-Energy-Nano-System with Self-Sustainable Photonic Modulation and Continuous Force Sensing

Wearable photonics offer a promising platform to complement the thriving complex wearable electronics system by providing high-speed data transmission channels and robust optical sensing paths. Regarding the realization of photonic computation and tunable (de)multiplexing functions based on system-level integration of abundant photonic modulators, it is challenging to reduce the overwhelming power consumption in traditional current-based silicon photonic modulators. This issue is addressed by integrating voltage-based aluminum nitride (AlN) modulator and textile triboelectric nanogenerator (T-TENG) on a wearable platform to form a nano-energy-nano-system (NENS). The T-TENG transduces the mechanical stimulations into electrical signals based on the coupling of triboelectrification and electrostatic induction. The self-generated high-voltage from the T-TENG is applied to the AlN modulator and boosts its modulation efficiency regardless of AlN's moderate Pockels effect. Complementarily, the AlN modulator's capacitive nature enables the open-circuit operation mode of T-TENG, providing the integrated NENS with continuous force sensing capability which is notably uninfluenced by operation speeds. Furthermore, a physical model is proposed to describe the coupled AlN modulator/T-TENG system. With the enhanced photonic modulation and the open-circuit operation mode enabled by synergies between the AlN modulator and the T-TENG, optical Morse code transmission and continuous human motion monitoring are demonstrated for practical wearable applications.

High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications

The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.