Low-loss partial rib polarization rotator consisting only of silicon core and silica cladding

Compact nonvolatile polarization switch using an asymmetric Sb2Se3-loaded silicon waveguide

We propose and simulate a compact (∼29.5 µm-long) nonvolatile polarization switch based on an asymmetric Sb₂Se₃-clad silicon photonic waveguide. The polarization state is switched between TM₀ and TE₀ mode by modifying the phase of nonvolatile Sb₂Se₃ between amorphous and crystalline. When the Sb₂Se₃ is amorphous, two-mode interference happens in the polarization-rotation section resulting in efficient TE₀-TM₀ conversion. On the other hand, when the material is in the crystalline state, there is little polarization conversion because the interference between the two hybridized modes is significantly suppressed, and both TE₀ and TM₀ modes go through the device without any change. The designed polarization switch has a high polarization extinction ratio of > 20 dB and an ultra-low excess loss of < 0.22 dB in the wavelength range of 1520-1585 nm for both TE₀ and TM₀ modes.

Ultracompact Polarization Splitter-Rotator Based on Shallowly Etched Subwavelength Gratings and Anisotropic Metasurfaces

Polarization splitter-rotators (PSRs) are an essential component in on-chip polarization-sensitive and polarization-division multiplexing systems. In this work, we propose an ultracompact and high-performance silicon-based polarization splitter-rotator utilizing anisotropic metasurfaces, which is the first to combine the two, to our knowledge. The tilted periodic metasurface structure has different modulation effects on different polarized light fields, such as the transverse-electric (TE) mode and the transverse-magnetic (TM) mode, which are beneficial for designing polarization management devices. According to the results, the entire length of the silicon PSR was ~13.5 μm. The TE-to-TM conversion loss and polarization conversion ratio ere -0.154 dB and 96.5% at 1.55 μm, respectively. In the meanwhile, the cross talk and reflection loss were -27.0 dB and -37.3 dB, when the fundamental TE mode was input. The insertion loss and cross talk were -0.19 dB and -25.01 dB at the central wavelength when the fundamental TM mode was input. In addition, the bandwidth reached up to ~112 nm with polarization conversion loss and insertion loss higher than -0.46 dB and -0.36 dB. The simulations also show that the designed devices had good fabrication tolerance.

Polarization independent and temperature tolerant AWG based on a silicon nitride platform

A polarization tolerant optical receiver is a key building block for the development of wavelength division multiplexing based high-speed optical data links. However, the design of a polarization independent demultiplexer is not trivial. In this Letter, we report on the realization of a polarization tolerant arrayed waveguide grating (AWG) on a 300-mm silicon nitride (SiN) photonic platform. By introducing a series of individual polarization rotators in the middle of the waveguide array, the polarization dependence of the AWG has been substantially reduced. Insertion losses below 2.2 dB and a crosstalk level better than -29dB has been obtained for transverse electric and transverse magnetic polarizations on a four-channel coarse AWG. The AWG temperature sensitivity has also been evaluated. Thanks to the low thermo-optical coefficient of SiN, a thermal shift below 12 pm/°C has been demonstrated.

Framework for tunable polarization state generation using Berry's phase in silicon waveguides

We present a framework for an arbitrary polarization state generator exploiting Berry's phase through a cascade of in-plane and out-of-plane silicon strip waveguides. We establish two criteria required for a passive device to achieve 90° polarization rotation, and derive explicit equations to satisfy the criteria. The results define regions within the parameter space where active tuning of the polarization state is possible over the entire Poincaré sphere. We use numerical modeling to show ±30 dB tuning of the polarization extinction ratio between the quasi-transverse electric and magnetic modes for a range of devices with deflection angles ranging from 5° to 45°, and modal birefringence from 0 to 0.05. We envision control of optical polarization on the chip-scale in integrated waveguides for communications, sensing, and computing applications.

Ultrashort polarization rotator based on spiral photonic crystal fiber aided by liquid crystal

A novel polarization rotator (PR) is proposed based on a spiral photonic crystal fiber aided by liquid crystal. The proposed PR has an ultrashort length of only ∼4.17  μm and a low cross talk of ∼-20.93  dB, and the proposed PR offers a nearly 100% polarization conversion efficiency for the whole C-band. In addition, a large temperature tolerance of ∼±5°C and a large rotation angle tolerance of ∼±4° can be accepted based on the full-vector finite-element method simulation. The proposed PR is a potentially effective polarization conversion device for applications in modern communication systems.

Highly efficient silicon optical polarization rotators based on mode order conversions

We design and demonstrate the novel silicon optical polarization rotators (PRs) based on the TM(0)-TE(n)-TE(0) mode conversions inside the waveguide. The TM(0)-TE(n) mode converters are realized by the mode hybridization of the tapered rib waveguides. The TE(n)-TE(0) mode converters based on the beam shaping method are followed to complete the PRs function. By using the TE(1), TE(2), and TE(3) mode as the transitional mode, the fabricated PRs show the insert losses of less than 0.4, 0.5, and 1 dB, respectively. The corresponding polarization extinction ratios of larger than 21, 18, and 23 dB, over a wavelength range of 100 nm.

Ultracompact polarization rotator in an asymmetric single dielectric loaded rib waveguide

A compact polarization rotator (PR) with an asymmetric single dielectric loaded rib waveguide is proposed. The core of the waveguide is designed to have a specific rectangular configuration. The waveguide requires only a single asymmetrical dielectric loading on the core to complete the polarization conversion. The optical field is confined to the vicinity of the core center, which matches the optical field of the input/output waveguides. The transition loss of the PR is as low as 0.03-0.21 dB/facet without the taper or offset schemes. Such results can facilitate the fabrication of a PR with an operating length of 10 μm. In a comprehensively designed PR with a length of 7.92 μm, a -1  dB bandwidth for polarization conversion efficiency (PCE) is greater than 100 nm at the communicating wavelength of 1550 nm. The loading width and thickness with ±20  nm tolerance exhibit -0.87 and -0.49  dB changes in PCE, respectively.

Polarization-rotating, Bragg-grating filters on silicon-on-insulator strip waveguides using asymmetric periodic corner corrugations

We report on a wavelength-selective, polarization-rotating filter using a partially etched asymmetric Bragg grating on a compact single-mode, silicon-on-insulator (SOI) strip waveguide. The asymmetric Bragg grating rotates and reflects the fundamental transverse electric (TE) and transverse magnetic (TM) modes at selected wavelengths. Our device offers wavelength-selective, polarization-rotating reflection at its reflection port and wavelength-selective, polarization-independent notch filtering at its through port. The device is fabricated using a CMOS-compatible process with 193 nm-deep ultraviolet lithography on an SOI platform. We present results for a 294.4 μm long device that has a 3 dB bandwidth of 2.63 nm and a low-excess loss of less than 1 dB. This device also has a maximum polarization-extinction-ratio of greater than 27 dB.

Spiral Bragg grating waveguides for TM mode silicon photonics

We demonstrate spiral Bragg grating waveguides (BGWs) on the silicon-on-insulator (SOI) platform for the fundamental transverse magnetic (TM) mode. We also compare TM spiral waveguides to equivalent transverse electric (TE) spiral waveguides and show that the TM spiral waveguides have lower propagation losses. Our spiral waveguides are space-efficient, requiring only areas of 131×131 µm(2) to accommodate 4 mm long BGWs, and, thus, are less susceptible to fabrication non-uniformities. Due to the lengths and reduced susceptibility to fabrication non-uniformities, we were able to obtain narrow bandwidth, large extinction ratio (ER) devices, as narrow as 0.09 nm and as large as 52 dB, respectively. Finally, we demonstrate a 4 mm long TM chirped spiral Bragg grating waveguide with a negative, average, group delay slope of -11 ps/nm.