Two-photon absorption and all-optical modulation in germanium-on-silicon waveguides for the mid-infrared

Innovative Integration of Dual Quantum Cascade Lasers on Silicon Photonics Platform

For the first time, we demonstrate the hybrid integration of dual distributed feedback (DFB) quantum cascade lasers (QCLs) on a silicon photonics platform using an innovative 3D self-aligned flip-chip assembly process. The QCL waveguide geometry was predesigned with alignment fiducials, enabling a sub-micron accuracy during assembly. Laser oscillation was observed at the designed wavelength of 7.2 μm, with a threshold current of 170 mA at room temperature under pulsed mode operation. The optical output power after an on-chip beam combiner reached sub-milliwatt levels under stable continuous wave operation at 15 °C. The specific packaging design miniaturized the entire light source by a factor of 100 compared with traditional free-space dual lasers module. Divergence values of 2.88 mrad along the horizontal axis and 1.84 mrad along the vertical axis were measured after packaging. Promisingly, adhering to i-line lithography and reducing the reliance on high-end flip-chip tools significantly lowers the cost per chip. This approach opens new avenues for QCL integration on silicon photonic chips, with significant implications for portable mid-infrared spectroscopy devices.

Nonlinear germanium-silicon photodiode for activation and monitoring in photonic neuromorphic networks

Silicon photonics is promising for artificial neural networks computing owing to its superior interconnect bandwidth, low energy consumption and scalable fabrication. However, the lack of silicon-integrated and monitorable optical neurons limits its revolution in large-scale artificial neural networks. Here, we highlight nonlinear germanium-silicon photodiodes to construct on-chip optical neurons and a self-monitored all-optical neural network. With specifically engineered optical-to-optical and optical-to-electrical responses, the proposed neuron merges the all-optical activation and non-intrusive monitoring functions in a compact footprint of 4.3 × 8 μm2. Experimentally, a scalable three-layer photonic neural network enables in situ training and learning in object classification and semantic segmentation tasks. The performance of this neuron implemented in a deep-scale neural network is further confirmed via handwriting recognition, achieving a high accuracy of 97.3%. We believe this work will enable future large-scale photonic intelligent processors with more functionalities but simplified architecture.

Ultrafast low-pump fluence all-optical modulation based on graphene-metal hybrid metasurfaces

Graphene is an attractive material for all-optical modulation because of its ultrafast optical response and broad spectral coverage. However, all-optical graphene modulators reported so far require high pump fluence due to the ultrashort photo-carrier lifetime and limited absorption in graphene. We present modulator designs based on graphene-metal hybrid plasmonic metasurfaces with highly enhanced light-graphene interaction in the nanoscale hot spots at pump and probe (signal) wavelengths. Based on this design concept, we have demonstrated high-speed all-optical modulators at near and mid-infrared wavelengths (1.56 μm and above 6 μm) with significantly reduced pump fluence (1-2 orders of magnitude) and enhanced optical modulation. Ultrafast near-infrared pump-probe measurement results suggest that the modulators' response times are ultimately determined by graphene's ultrafast photocarrier relaxation times on the picosecond scale. The proposed designs hold the promise to address the challenges in the realization of ultrafast all-optical modulators for mid-and far-infrared wavelengths.

Nonlinear Properties of Ge-rich Si1-xGex Materials with Different Ge Concentrations

Silicon photonics is a large volume and large scale integration platform for applications from long-haul optical telecommunications to intra-chip interconnects. Extension to the mid-IR wavelength range is now largely investigated, mainly driven by absorption spectroscopy applications. Germanium (Ge) is particularly compelling as it has a broad transparency window up to 15 µm and a much higher third-order nonlinear coefficient than silicon which is very promising for the demonstration of efficient non-linear optics based active devices. Si_1−xGe_x alloys have been recently studied due to their ability to fine-tune the bandgap and refractive index. The material nonlinearities are very sensitive to any modification of the energy bands, so Si_1−xGe_x alloys are particularly interesting for nonlinear device engineering. We report on the first third order nonlinear experimental characterization of Ge-rich Si_1−xGe_x waveguides, with Ge concentrations x ranging from 0.7 to 0.9. The characterization performed at 1580 nm is compared with theoretical models and a discussion about the prediction of the nonlinear properties in the mid-IR is introduced. These results will provide helpful insights to assist the design of nonlinear integrated optical based devices in both the near- and mid-IR wavelength ranges.

Germanium-on-silicon Vernier-effect photonic microcavities for the mid-infrared

We present Vernier-effect photonic microcavities based on a germanium-on-silicon technology platform, operating around the mid-infrared wavelength of 3.8 μm. Cascaded racetrack resonators have been designed to operate in the second regime of the Vernier effect, and typical Vernier comb-like spectra have been successfully demonstrated with insertion losses of ∼5  dB, maximum extinction ratios of ∼23  dB, and loaded quality factors higher than 5000. Furthermore, an add-drop racetrack resonator designed for a Vernier device has been characterized, exhibiting average insertion losses of 1 dB, extinction ratios of up to 18 dB, and a quality factor of ∼1700.

Investigation of germanium Raman lasers for the mid-infrared

In this paper we present a detailed theoretical investigation of integrated racetrack Raman lasers based on the germanium material system operating in the mid-infrared beyond the germanium two-photon absorption cut-off wavelength of 3.17 μm. The effective Raman gain has been estimated in waveguides based on germanium-on-silicon, germanium-on-SOI and germanium-on-Si3N4 technology platforms as a function of their crystallographic orientations. Furthermore, general design guidelines have been determined by means of a comparative analysis of Raman laser performance, i.e. the threshold power, polarization and directionality of the excited Stokes signals as a function of racetrack cavity length and directional-coupler dimensions. Finally, the emitted Raman laser power has been evaluated as a function of overall propagation losses and operative wavelengths up to 3.8 μm, while the time dynamics of Raman lasers has been simulated assuming continuous and pulse waves as input pump signals.

Non-degenerate two-photon absorption in silicon waveguides: analytical and experimental study

We theoretically and experimentally investigate the nonlinear evolution of two optical pulses in a silicon waveguide. We provide an analytic solution for the weak probe wave undergoing non-degenerate two-photon absorption (TPA) from the strong pump. At larger pump intensities, we employ a numerical solution to study the interplay between TPA and photo-generated free carriers. We develop a simple and powerful approach to extract and separate out the distinct loss contributions of TPA and free-carrier absorption from readily available experimental data. Our analysis accounts accurately for experimental results in silicon photonic crystal waveguides.