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Huang YQ, Huang R, Liu QL, Zheng CC, Ning JQ, Peng Y, Zhang ZY. Realization of III-V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique. NANOSCALE RESEARCH LETTERS 2017; 12:12. [PMID: 28058648 PMCID: PMC5216013 DOI: 10.1186/s11671-016-1780-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2016] [Accepted: 12/09/2016] [Indexed: 06/06/2023]
Abstract
In this paper, we demonstrated the fabrication of one-dimensional (1D) and two-dimensional (2D) periodic nanostructures on III-V GaAs substrates utilizing laser direct writing (LDW) technique. Metal thin films (Ti) and phase change materials (Ge2Sb2Te5 (GST) and Ge2Sb1.8Bi0.2Te5 (GSBT)) were chosen as photoresists to achieve small feature sizes of semiconductor nanostructures. A minimum feature size of about 50 nm about a quarter of the optical diffraction limit was obtained on the photoresists, and 1D III-V semiconductor nanolines with a minimum width of 150 nm were successfully acquired on the GaAs substrate which was smaller than the best results acquired on Si substrate ever reported. 2D nanosquare holes were fabricated as well by using Ti thin film as the photoresist, with a side width of about 200 nm, but the square holes changed to a rectangle shape when GST or GSBT was employed as the photoresist, which mainly resulted from the interaction of two cross-temperature fields induced by two scanning laser beams. The interacting mechanism of different photoresists in preparing periodic nanostructures with the LDW technique was discussed in detail.
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Affiliation(s)
- Yuan-Qing Huang
- School of Physical Sciences and Technology, Lanzhou University, 730000, Lanzhou, People's Republic of China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123, Suzhou, People's Republic of China
| | - Rong Huang
- The NanoX, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123, Suzhou, People's Republic of China
| | - Qing-Lu Liu
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123, Suzhou, People's Republic of China
| | - Chang-Cheng Zheng
- Department of Mathematical Sciences, Mathematics and Physics Centre, Xi'an Jiaotong-Liverpool University, 215123, Suzhou, People's Republic of China
| | - Ji-Qiang Ning
- The NanoX, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123, Suzhou, People's Republic of China
| | - Yong Peng
- School of Physical Sciences and Technology, Lanzhou University, 730000, Lanzhou, People's Republic of China
| | - Zi-Yang Zhang
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123, Suzhou, People's Republic of China.
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Shusteff M, Browar AEM, Kelly BE, Henriksson J, Weisgraber TH, Panas RM, Fang NX, Spadaccini CM. One-step volumetric additive manufacturing of complex polymer structures. SCIENCE ADVANCES 2017; 3:eaao5496. [PMID: 29230437 PMCID: PMC5724355 DOI: 10.1126/sciadv.aao5496] [Citation(s) in RCA: 111] [Impact Index Per Article: 15.9] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2017] [Accepted: 11/03/2017] [Indexed: 05/07/2023]
Abstract
Two limitations of additive manufacturing methods that arise from layer-based fabrication are slow speed and geometric constraints (which include poor surface quality). Both limitations are overcome in the work reported here, introducing a new volumetric additive fabrication paradigm that produces photopolymer structures with complex nonperiodic three-dimensional geometries on a time scale of seconds. We implement this approach using holographic patterning of light fields, demonstrate the fabrication of a variety of structures, and study the properties of the light patterns and photosensitive resins required for this fabrication approach. The results indicate that low-absorbing resins containing ~0.1% photoinitiator, illuminated at modest powers (~10 to 100 mW), may be successfully used to build full structures in ~1 to 10 s.
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Affiliation(s)
- Maxim Shusteff
- Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Corresponding author. (M.S.); (N.X.F.); (C.M.S.)
| | - Allison E. M. Browar
- Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
- Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627, USA
| | - Brett E. Kelly
- Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
- Department of Mechanical Engineering, University of California, Berkeley, Berkeley, CA 94720, USA
| | - Johannes Henriksson
- Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
- Department of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, CA 94720, USA
| | | | - Robert M. Panas
- Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
| | - Nicholas X. Fang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Corresponding author. (M.S.); (N.X.F.); (C.M.S.)
| | - Christopher M. Spadaccini
- Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
- Corresponding author. (M.S.); (N.X.F.); (C.M.S.)
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Holographic Fabrication of Designed Functional Defect Lines in Photonic Crystal Lattice Using a Spatial Light Modulator. MICROMACHINES 2016; 7:mi7040059. [PMID: 30407432 PMCID: PMC6190374 DOI: 10.3390/mi7040059] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/11/2016] [Revised: 03/26/2016] [Accepted: 03/29/2016] [Indexed: 11/17/2022]
Abstract
We report the holographic fabrication of designed defect lines in photonic crystal lattices through phase engineering using a spatial light modulator (SLM). The diffracted beams from the SLM not only carry the defect's content but also the defect related phase-shifting information. The phase-shifting induced lattice shifting in photonic lattices around the defects in three-beam interference is less than the one produced by five-beam interference due to the alternating shifting in lattice in three beam interference. By designing the defect line at a 45 degree orientation and using three-beam interference, the defect orientation can be aligned with the background photonic lattice, and the shifting is only in one side of the defect line, in agreement with the theory. Finally, a new design for the integration of functional defect lines in a background phase pattern reduces the relative phase shift of the defect and utilizes the different diffraction efficiency between the defect line and background phase pattern. We demonstrate that the desired and functional defect lattice can be registered into the background lattice through the direct imaging of designed phase patterns.
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Li W, Urbanski L, Marconi MC. Invited Article: Progress in coherent lithography using table-top extreme ultraviolet lasers. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2015; 86:121301. [PMID: 26723999 DOI: 10.1063/1.4937899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2015] [Accepted: 11/26/2015] [Indexed: 06/05/2023]
Abstract
Compact (table top) lasers emitting at wavelengths below 50 nm had expanded the spectrum of applications in the extreme ultraviolet (EUV). Among them, the high-flux, highly coherent laser sources enabled lithographic approaches with distinctive characteristics. In this review, we will describe the implementation of a compact EUV lithography system capable of printing features with sub-50 nm resolution using Talbot imaging. This compact system is capable of producing consistent defect-free samples in a reliable and effective manner. Examples of different patterns and structures fabricated with this method will be presented.
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Affiliation(s)
- W Li
- Electrical and Computer Engineering Department and NSF Engineering Research Center for Extreme Ultraviolet Science and Technology, Colorado State University, Fort Collins, Colorado 80523, USA
| | - L Urbanski
- Electrical and Computer Engineering Department and NSF Engineering Research Center for Extreme Ultraviolet Science and Technology, Colorado State University, Fort Collins, Colorado 80523, USA
| | - M C Marconi
- Electrical and Computer Engineering Department and NSF Engineering Research Center for Extreme Ultraviolet Science and Technology, Colorado State University, Fort Collins, Colorado 80523, USA
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