High-frequency electro-optic measurement of strained silicon racetrack resonators

Phase-resolved joint spectra tomography of a ring resonator photon pair source using a silicon photonic chip

The exponential growth of photonic quantum technologies is driving the demand for tools to measure the quality of their information carriers. One of the most prominent is stimulated emission tomography (SET), which uses classical coherent fields to measure the joint spectral amplitude (JSA) of photon pairs with high speed and resolution. While the modulus of the JSA can be directly addressed from a single intensity measurement, the retrieval of the joint spectral phase (JSP) is far more challenging and received minor attention. However, a wide class of spontaneous sources of technological relevance, as chip integrated micro-resonators, have a JSP with a rich structure that carries correlations hidden in the intensity domain. Here, using a compact and reconfigurable silicon photonic chip, the complex JSA of a micro-ring resonator photon pair source is measured for the first time. The photonic circuit coherently excites the ring and a reference waveguide, and the interferogram formed by their stimulated fields is used to map the ring JSP through a novel phase reconstruction technique. This tool complements the traditionally bulky and sophisticated methods implemented so far, simultaneously minimizing the set of required resources.

Enhancing Pockels effect in strained silicon waveguides

The magnitude and origin of the electro-optic measurements in strained silicon devices has been lately the object of a great controversy. Furthermore, recent works underline the importance of the masking effect of free carriers in strained waveguides and the low interaction between the mode and the highly strained areas. In the present work, the use of a p-i-n junction and an asymmetric cladding is proposed to eliminate the unwanted carrier influence and improve the electro-optical modulation response. The proposed configuration enhances the effective refractive index due to the strain-induced Pockels effect in more than two orders of magnitude with respect to the usual configuration.

On the origin of second harmonic generation in silicon waveguides with silicon nitride cladding

Strained silicon waveguides have been proposed to break the silicon centrosymmetry, which inhibits second-order nonlinearities. Even if electro-optic effect and second harmonic generation (SHG) were measured, the published results presented plenty of ambiguities due to the concurrence of different effects affecting the process. In this work, the origin of SHG in a silicon waveguide strained by a silicon nitride cladding is investigated in detail. From the measured SHG efficiencies, an effective second-order nonlinear susceptibility of ~0.5 pmV^-1 is extracted. To evidence the role of strain, SHG is studied under an external mechanical load, demonstrating no significant dependence on the applied stress. On the contrary, a 254 nm ultraviolet (UV) exposure of the strained silicon waveguide suppresses completely the SHG signal. Since UV irradiation is known to passivate charged defects accumulated in the silicon nitride cladding, this measurement evidences the crucial role of charged centers. In fact, charged defects cause an electric field in the waveguide that via the third order silicon nonlinearity induces the SHG. This conclusion is supported by numerical simulations, which accurately model the experimental results.

Tuning the strain-induced resonance shift in silicon racetrack resonators by their orientation

In this work, we analyze the role of strain on a set of silicon racetrack resonators presenting different orientations with respect to the applied strain. The strain induces a variation of the resonance wavelength, caused by the photoelastic variation of the material refractive index as well as by the mechanical deformation of the device. In particular, the mechanical deformation alters both the resonator perimeter and the waveguide cross-section. Finite element simulations taking into account all these effects are presented, providing good agreement with experimental results. By studying the role of the resonator orientation we identify interesting features, such as the tuning of the resonance shift from negative to positive values and the possibility of realizing strain insensitive devices.

On the influence of interface charging dynamics and stressing conditions in strained silicon devices

The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrier effects. A first evidence is the appearance of a variable optical absorption with the applied voltage that should not occur in case of having a purely electro-optic Pockels effect. However, hysteresis and saturation effects are also observed. We demonstrate that such effects are mainly due to the carrier trapping dynamics at the interface between the silicon and the silicon nitride and their influence on the silicon nitride charge. This theory is further confirmed by analyzing identical devices but with the silicon nitride cladding layer optimized to have intrinsic stresses of opposite sign and magnitude. The latter is achieved by a post annealing process which produces a defect healing and consequently a reduction of the silicon nitride charge. Raman measurements are also carried out to confirm the obtained results.

Broadband opto-electro-mechanical effective refractive index tuning on a chip

Photonic integrated circuits have enabled progressively active functionality in compact devices with the potential for large-scale integration. To date the lowest loss photonic circuits are achieved with silica or silicon nitride-based platforms. However, these materials generally lack reconfigurability. In this work we present a platform for achieving active functionality in any dielectric waveguide via large-scale opto-electro-mechanical tuning of the effective refractive index (Δn_eff≈0.01-0.1) and phase (Δϕ>2π). A suspended microbridge weakly interacts with the evanescent field of a low-mode confinement waveguide to tune the effective refractive index and phase with minimal loss. Metal-coated bridges enable electrostatic actuation to displace the microbridge to dynamically tune n_EFF. In a second implementation we place a non-metallized dielectric microbridge in a gradient electric field to achieve actuation and tuning. Both approaches are broadband, universally applicable to any waveguide, and pave the way for adding active functionality to many passive optical materials.