Kerr-induced controllable adiabatic frequency conversion in an ultrahigh Q silica toroid microcavity

Electrically induced adiabatic frequency conversion in an integrated lithium niobate ring resonator

Changing the frequency of light outside the laser cavity is essential for an integrated photonics platform, especially when the optical frequency of the on-chip light source is fixed or challenging to be tuned precisely. Previous on-chip frequency conversion demonstrations of multiple GHz have limitations of tuning the shifted frequency continuously. To achieve continuous on-chip optical frequency conversion, we electrically tune a lithium niobate ring resonator to induce adiabatic frequency conversion. In this work, frequency shifts of up to 14.3 GHz are achieved by adjusting the voltage of an RF control. With this technique, we can dynamically control light in a cavity within its photon lifetime by tuning the refractive index of the ring resonator electrically.

Pockels-effect-based adiabatic frequency conversion in ultrahigh-Q microresonators

Adiabatic frequency conversion has some key advantages over nonlinear frequency conversion. No threshold and no phase-matching conditions need to be fulfilled. Moreover, it exhibits a conversion efficiency of 100 % down to the single-photon level. Adiabatic frequency conversion schemes in microresonators demonstrated so far suffer either from low quality factors of the employed resonators resulting in short photon lifetimes or small frequency shifts. Here, we present an adiabatic frequency conversion (AFC) scheme by employing the Pockels effect. We use a non-centrosymmetric ultrahigh-Q microresonator made out of lithium niobate. Frequency shifts of more than 5 GHz are achieved by applying just 20 V to a 70-µm-thick resonator. Furthermore, we demonstrate that with the same setup positive and negative frequency chirps can be generated. With this method, by controlling the voltage applied to the crystal, almost arbitrary frequency shifts can be realized. The general advances in on-chip fabrication of lithium-niobate-based devices make it feasible to transfer the current apparatus onto a chip suitable for mass production.

All-optical tunable buffering with coupled ultra-high Q whispering gallery mode microcavities

All-optical tunable buffering was recently achieved on a chip by using dynamically tuned coupled mode induced transparency, which is an optical analogue of electromagnetically induced transparency. However, the small Q s of about 10⁵ used in those systems were limiting the maximum buffering time to a few hundred ps. Although employing an ultra-high Q whispering gallery mode (WGM) microcavity can significantly improve the maximum buffering time, the dynamic tuning of the WGM has remained challenging because thermo-optic and pressure tunings, which are widely used for WGM microcavities, have a very slow response. Here we demonstrate all-optical tunable buffering utilizing coupled ultra-high Q WGM cavities and the Kerr effect. The Kerr effect can change the refractive index instantaneously, and this allowed us to tune the WGM cavity very quickly. In addition, from among the various WGM cavities we employed a silica toroid microcavity for our experiments because it has an ultra-high Q factor (>2 × 10⁷) and a small mode volume, and can be fabricated on a chip. Use of the Kerr effect and the silica toroid microcavity enabled us to observe an on-chip all-optical tunable buffering operation and achieve a maximum buffering time of 20 ns.