Zhang J, Guo K, Gao M, Gao Y, Yang J. Design of polarization-insensitive high-visibility silicon-on-insulator quantum interferometer.
Sci Rep 2018;
8:14613. [PMID:
30279423 PMCID:
PMC6168592 DOI:
10.1038/s41598-018-32769-5]
[Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/30/2018] [Accepted: 09/11/2018] [Indexed: 11/28/2022] Open
Abstract
We based on integrated silicon-on-insulator platforms design the key components of an on-chip interferometer, beam splitter and directional coupler included, valid in high-visibility interference at telecommunication wavelengths. Special attention is given to the equal-proportion beam splitting and directional coupling, which is achieved by carefully designing the geometric dimension of multi-mode interferometer structure. The proposed interferometer facilitates low loss, broad operating bandwidth, anticipated large tolerance on size variation induced in fabrication procedures, based on a particular wafer with silicon layer thickness of 320 nm. The most highlight property of polarization-insensitive, enables the path-selective qubits generation for bi-polarization that further makes possible quantum key distribution using high dimensional protocols. We numerically demonstrate interference at 1550 nm with visibilities of 99.50% and 93.99% for transverse-electric and transverse-magnetic polarization, respectively, revealing that the proposed interferometer structure is well capable of on-chip optical control especially in quantum optics regime.
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