Full C-band Si photonic crystal waveguide modulator

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

The monolithic growth of direct-bandgap III-V materials directly on a Si substrate is a promising approach for the fabrication of complex silicon photonic integrated circuits including light sources and amplifiers. It remains challenging to realize practical, reliable, and efficient light emitters due to misfit defect formation during the epitaxial growth. Exploiting nano-ridge engineering (NRE), III-V nano-ridges with high crystal quality were achieved based on aspect ratio defect trapping inside narrow trenches. In an earlier work, we used an etched grating to create distributed feedback lasers from these nano-ridges. Here we deposited an amorphous silicon grating on the top of the nano-ridge. Under pulsed optical pumping, a ∼7.84 kW/cm2 lasing threshold was observed, ∼5 times smaller compared to devices with an etched grating inside the nano-ridge. Compared to the etched grating, the amorphous silicon grating introduces no extra carrier loss channels through surface state defects, which is believed to be the origin of the lower threshold. This low threshold again demonstrates the high quality of the epitaxial deposited material and may provide a route toward further optimizing the electrically driven devices.

Recent Progress in Silicon-Based Slow-Light Electro-Optic Modulators

As an important optoelectronic integration platform, silicon photonics has achieved significant progress in recent years, demonstrating the advantages on low power consumption, low cost, and complementary metal–oxide–semiconductor (CMOS) compatibility. Among the different silicon photonics devices, the silicon electro-optic modulator is a key active component to implement the conversion of electric signal to optical signal. However, conventional silicon Mach–Zehnder modulators and silicon micro-ring modulators both have their own limitations, which will limit their use in future systems. For example, the conventional silicon Mach–Zehnder modulators are hindered by large footprint, while the silicon micro-ring modulators have narrow optical bandwidth and high temperature sensitivity. Therefore, developing a new structure for silicon modulators to improve the performance is a crucial research direction in silicon photonics. Meanwhile, slow-light effect is an important physical phenomenon that can reduce the group velocity of light. Applying slow-light effect on silicon modulators through photonics crystal and waveguide grating structures is an attractive research point, especially in the aspect of reducing the device footprint. In this paper, we review the recent progress of silicon-based slow-light electro-optic modulators towards future communication requirements. Beginning from the principle of slow-light effect, we summarize the research of silicon photonic crystal modulators and silicon waveguide grating modulators in detail. Simultaneously, the experimental results of representative silicon slow-light modulators are compared and analyzed. Finally, we discuss the existing challenges and development directions of silicon-based slow-light electro-optic modulators for the practical applications.

Photonic crystals with split ring unit cells for subwavelength light confinement

Here we report a photonic crystal with a split ring unit cell shape that demonstrates an order of magnitude larger peak electric field energy density compared with that of a traditional photonic crystal. Split ring photonic crystals possess several subwavelength tuning parameters, including split ring rotation angle and split width, which can be leveraged to modify light confinement for specific applications. Modifying the split ring's parameters allows for tuning of the peak electric field energy density in the split by over one order of magnitude and tuning of the air band edge wavelength by nearly 10 nm in the near infrared region. Designed to have highly focused optical energy in an accessible subwavelength gap, the split ring photonic crystal is well suited for applications including optical biosensing, optical trapping, and enhanced emission from a quantum dot or other nanoscale emitter that could be incorporated in the split.

Si photonic crystal slow-light waveguides optimized through informatics technology

We modeled the photonic bands of SiO₂-cladded Si lattice-shifted photonic crystal waveguides via machine learning and found a structure that generates low-dispersion slow light with a group index of approximately 20 in the full C-band at telecom wavelengths. The normalized delay-bandwidth product is as large as 0.45, which is close to the theoretical upper limit. The transition structure between this waveguide and a Si-channel waveguide was designed using an evolutional optimization, and a C-band average loss of 0.116 dB/transition was calculated. These results prove the possibility of further enhancing the versatility of slow light.

Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review

The realization of a silicon optical phase shifter marked a cornerstone for the development of silicon photonics, and it is expected that optical interconnects based on the technology relax the explosive datacom growth in data centers. High-performance silicon optical modulators and switches, integrated into a chip, play a very important role in optical transceivers, encoding electrical signals onto the light at high speed and routing the optical signals, respectively. The development of the devices is continuously required to meet the ever-increasing data traffic at higher performance and lower cost. Therefore, heterogeneous integration is one of the highly promising approaches, expected to enable high modulation efficiency, low loss, low power consumption, small device footprint, etc. Therefore, we review heterogeneously integrated optical modulators and switches for the next-generation silicon photonic platform.

Wideband slow short-pulse propagation in one-thousand slantingly coupled L3 photonic crystal nanocavities

Coupled cavities have been used previously to realize on-chip low-dispersion slow-light waveguides, but the bandwidth was usually narrower than 10 nm and the total length was much shorter than 1 mm. Here we report long (0.05-2.5 mm) slow-light coupled cavity waveguides formed by using 50, 200, and 1,000 L3 photonic crystal nanocavities with an optical volume smaller than (λ/n)³, slanted from Γ-K orientation. We demonstrate experimentally the formation of a single-mode wideband coupled cavity mode with a bandwidth of up to 32nm (4THz) in telecom C-band, generated from the ultra-narrow-band (~300 MHz) fundamental mode of each L3 nanocavity, by controlling the cavity array orientation. Thanks to the ultrahigh-Q nanocavity design, coupled cavity waveguides longer than 1 mm exhibited low loss and allowed time-of-flight dispersion measurement over a bandwidth up to 22 nm by propagating a short pulse over 1,000 coupled L3 nanocavities. The highly-dense slanted array of L3 nanocavity demonstrated unprecedentedly high cavity coupling among the nanocavities. The scheme we describe provides controllable planar dispersion-managed waveguides as an alternative to W1-based waveguides on a photonic crystal chip.