Compact and efficient mid-IR OPO source pumped by a passively Q-switched Tm:YAP laser

Upconversion-pumped femtosecond thulium laser at 2309 nm mode-locked by a GaSb-based SESAM

We report on a femtosecond thulium laser operating on the 3H4 → 3H5 transition with upconversion pumping around 1 µm and passively mode-locked by a GaSb-based SEmiconductor Saturable Absorber Mirror (SESAM). This laser employs a 6 at.% Tm:LiYF4 laser crystal and a polarization maintaining Yb-fiber master oscillator power amplifier at 1043 nm as a pump source addressing the 3F4 → 3F2,3 excited-state absorption transition of Tm3+ ions. In the continuous-wave regime, the Tm-laser generates 616 mW at ∼2313 nm with a slope efficiency of 10.0% (vs. the incident pump power) and a linear polarization (π). By implementing a type-I SESAM with a single ternary strained In0.33Ga0.67Sb quantum well embedded in GaSb for sustaining and stabilizing the soliton pulse shaping, the self-starting mode-locked Tm-laser generated pulses as short as 870 fs at a central wavelength of 2309.4 nm corresponding to an average output power of 208 mW at a pulse repetition rate of 105.08 MHz and excellent mode-locking stability. The output power was scaled to 450 mW at the expense of a longer pulse duration of 1.93 ps. The nonlinear parameters of the SESAM are also reported.

WSe2/BN heterostructure as saturable absorber for a diode-pumped passively Q-switched 2 µm solid-state laser

We have successfully achieved the synthesis of heterojunction consisting of WSe2 and BN, by using a liquid phase exfoliation method, and characterization of the prepared materials under the microstructure. The WSe2/BN heterojunction was used as a saturable absorber in the Tm:YAP laser for passively Q-switched operation, and a pulsed laser with an output wavelength around 2 µm range was successfully obtained. After comparing the effects of resonators composed of different cavity mirrors, it is concluded that when the curvature radius of the input mirror is 250 mm and the transmittance of the output coupler is 2.5%, the best output performance was obtained. The maximum average output power of 834 mW was achieved, with a pulsed repetition frequency of 43.51 kHz and a minimum pulse duration of 1.28 µs, corresponding to a peak power of 14.97 W and a maximum single pulse energy of 19.17 µJ.

Efficient 1.7 µm pumping of 2 µm thulium lasers

Solid-state 2 µm lasers based on thulium-doped active media Tm:YAG, Tm:YAP, and Tm:YLF were investigated under 1.7 µm resonant diode pumping. In contrast with standard 0.8 µm pump wavelength, a high slope efficiency was achieved, up to 80% in the case of Tm:YAP and Tm:YLF, nearing a quantum limit without relying on Tm3+-Tm3+ cross-relaxation energy transfer. Low thermal load allowed for stable continuous-wave operation with good beam quality and output power up to 6 W (Tm:YAG, Tm:YLF), and 8 W (Tm:YAP).

Seeded optical parametric generation in CdSiP2 pumped by a Raman fiber amplifier at 1.24 µm

We report a seeded optical parametric generator (OPG) producing tunable radiation from 4.2-4.6 µm. The seeded OPG employs a 13 mm long CdSiP₂ (CSP) crystal cut for non-critical phase-matching, pumped by a nanosecond-pulsed, MHz repetition rate Raman fiber amplifier system at 1.24 µm. A filtered, continuous-wave fiber supercontinuum source at 1.72 µm is used as the seed. The source generates up to 0.25 W of mid-infrared (MIR) idler power with a total pump conversion of 42% (combined signal and idler).

Room temperature watt-level 3.87 µm MgO:PPLN optical parametric oscillator under pumping with a Tm:YAP laser

A room-temperature highly efficient Tm:YAP laser pumped MgO:PPLN optical parametric oscillator operating at 3.87 µm near degeneracy is demonstrated. The pump source is an acousto-optical (AO) Q-switched Tm:YAP laser, which delivers a maximum output power of 6.17 W with a pulse duration of 45 ns and a repetition rate of 6 kHz. The temperature dependent wavelength tuning characteristics of the PPLN-OPO is investigated, and a maximum OPO output power of 1.2 W at around 3.87 µm is achieved at 35°C, corresponding to an optical-optical conversion efficiency of 19.4%. To the best of our knowledge, this is the maximum output power ever reported from 2 µm waveband laser pumped 3-5 µm MgO:PPLN OPOs.

High-average-power picosecond mid-infrared OP-GaAs OPO

We report a high-average-power mid-infrared picosecond (ps) optical parametric oscillator (OPO) based on orientation-patterned gallium arsenide (OP-GaAs), with wide wavelength tunability. The OP-GaAs OPO is synchronously pumped by a thulium-doped-fiber (TDF) master oscillator power amplifier (MOPA), seeded by a gain-switched laser diode. At a pump power of 35.3 W and a repetition rate of 100 MHz, a maximum OPO total average output power of 9.7 W (signal 5.7 W (0.60 kW peak power), idler 4.0 W (0.42 kW peak power)) is obtained at signal and idler wavelengths of 3093 nm and 5598 nm, and a thermally induced power roll-off is observed. To mitigate the thermal effects, an optical chopper is placed before the OPO to provide burst mode operation and a reduced thermal load. We achieved a linear growth in OPO output power over the full range of available pump powers in this instance confirming thermal effects as the origin of the roll-off observed under continuous pumping. We estimate the maximum peak powers of the signal and idler are estimated to be over 0.79 kW and 0.58 kW, respectively in this instance. A wide mid-infrared wavelength tuning range of 2895-3342 nm (signal) and 4935-6389 nm (idler) is demonstrated.