Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO2/silicon technology

Thermo-optic VO2-based silicon waveguide mid-infrared router with asymmetric activation thresholds and large bi-stability

We report a novel four-port optical router that exploits non-linear properties of vanadium dioxide (VO₂) phase-change material to achieve asymmetrical power threshold response with power limiting capability. The scope of this study lies within the concept, modeling, and simulation of the device, with practical considerations in mind for future experimental devices. The waveguide structure, designed to operate at the wavelength of 5.0 µm, is composed of a silicon core with air and silicon dioxide forming the cladding layers. Two ring resonators are employed to couple two straight waveguides, thus four individual ports. One of the ring resonators has a 100-nm-thick VO₂ layer responsible for non-linear behavior of the device. The router achieves 56.5 and 64.5 dB of power limiting at the forward and reverse operating modes, respectively. Total transmission in the inactivated mode is 75%. Bi-stability and latching behavior are demonstrated and discussed.

Nonlinear control of switchable wavelength-selective absorption in a one-dimensional photonic crystal including ultrathin phase transition material-vanadium dioxide

Based on the transfer matrix theory, I realize a nearly perfect wavelength-selective absorption of near-IR waves in a one-dimensional defective photonic crystal, \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$(AB)^ND(BA)^M$$\end{document}(AB)ND(BA)M, containing a vanadium dioxide (VO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document}2) phase transition layer as a defect. Firstly, the effect of the period numbers, N and M, on the absorption spectrum is studied to achieve a perfect absorption peak. It is shown that optimal period numbers of the structure to maximize the absorption peak are N = 7 and M = 16. Our results also indicate that a narrow-band, almost perfect absorption is achieved due to the symmetry of the structure with respect to VO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document}2. Also, the absorption amount of the considered structure is about 50 times larger than that of a free-standing VO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document}2. Furthermore, the absorption peak value and resonant wavelength can be continuously tuned while VO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document}2 transits from semiconductor to metal phase at 340 K temperature. In addition, how different parameters such as the polarization and incident angle affect the absorption spectra is discussed. Finally, the nonlinear absorption spectra of the structure are graphically demonstrated beside the linear case. The current system can be applied in designing practical tunable optical devices such as IR sensors, limiters, and switches.

Design of Ultra-High Extinction Ratio TM- and TE-Pass Polarizers Based on Si-Sc0.2Sb2Te3 Hybrid Waveguide

The selective polarizers play an important role in silicon-based integrated circuits. The previous polarizers based on silicon waveguides have the defects of large scale and low extinction ratio. In this work, TM- and TE-pass polarizers only 10 μm long were developed based on phase-change material of Sc0.2Sb2Te3 (SST) hybrid silicon waveguide, where several SST bars with a varied distance was designed. Because of the excellent characteristics of the refractive index of the material, ultra-high extinction ratios (ERs) were achieved. A 3-D finite element simulation was carried out to optimize the structure of the polarizers, and the distribution of light field, as well as the transmission behavior of TE and TM modes in the two polarizers, was further demonstrated in detail. When the SST is crystalline, the unwanted mode can be attenuated, while the wanted mode can pass through with low loss. Compared with the GST-based polarizers, the proposed ones achieved high extinction ratios of ~43.12 dB (TM-pass one) and ~44.21 dB (TE-pass one), respectively; at the same time, ILs for the wanted modes could be negligible. The design of high-performance polarizers paves a new way for applications of all-optical integrated circuits.

Switching dynamics of silicon waveguide optical modulator driven by photothermally induced metal-insulator transition of vanadium dioxide cladding layer

We investigated the switching dynamics of optical modulators consisting of a Si waveguide with a VO₂ cladding layer by utilizing the photothermal effect, which induces a metal-insulator transition in VO₂. The devices exhibited stable optical switching with a high extinction ratio exceeding 16 dB. The switching time of the insulator-to-metal transition (heating process) ranged from tens of nanoseconds to microseconds depending on the incident light power, and that of the metal-to-insulator transition (cooling process) was several microseconds regardless of the incident light power. The heat transfer in the devices was numerically simulated to reproduce the switching characteristics and revealed that the temperature change in the first few micrometers of the VO₂/Si waveguide governed the switching time. The thermal structural design of the device is thus of key importance to improve the switching speed of the device.

Tunable Control of Mie Resonances Based on Hybrid VO2 and Dielectric Metamaterial

In this paper, a tunable dielectric metamaterial absorber with temperature-based vanadium dioxide (VO2) is proposed. In contrast to previous studies, both the metal phase of VO2 and the semiconductor phase are applied to manipulate the Mie resonant modes in the dielectric cubes. By embedding VO2 in the main resonant structure, the control over Mie resonant modes in dielectric metamaterials is realized. Each resonant mode is analyzed through field distribution and explains why the phase switch of VO2 could affect the absorbance spectrum. This use of tunable materials could create another new methodology for the manipulation of the Mie resonance-based dielectric cubes and make them closer in essence to isotropic metamaterials.

Ultracompact polarizing beam splitter based on single-material birefringent photonic crystal

An ultracompact polarizing beam splitter (PBS) is designed and fabricated based on a single-material birefringent photonic crystal structure. The fabrication method is based on e-beam physical vapor deposition where an oblique angle deposition technique is also incorporated. The PBS is designed for high tolerances in volume production. The main ingredient of the PBS is an alternating high- and low-refractive-index modulation created from titanium dioxide deposited at angles of 0° and 70°. The measurements exhibited successful separation of two states of polarization with efficiencies of more than 92% over a total device length of under 6 μm.