Electroluminescence from two I-III-VI quantum dots of A-Ga-S (A=Cu, Ag)

A Review of in vivo Toxicity of Quantum Dots in Animal Models

Tremendous research efforts have been devoted to nanoparticles for applications in optoelectronics and biomedicine. Over the past decade, quantum dots (QDs) have become one of the fastest growing areas of research in nanotechnology because of outstanding photophysical properties, including narrow and symmetrical emission spectrum, broad fluorescence excitation spectrum, the tenability of the emission wavelength with the particle size and composition, anti-photobleaching ability and stable fluorescence. These characteristics are suitable for optical imaging, drug delivery and other biomedical applications. Research on QDs toxicology has demonstrated QDs affect or damage the biological system to some extent, and this situation is generally caused by the metal ions and some special properties in QDs, which hinders the further application of QDs in the biomedical field. The toxicological mechanism mainly stems from the release of heavy metal ions and generation of reactive oxygen species (ROS). At the same time, the contact reaction with QDs also cause disorders in organelles and changes in gene expression profiles. In this review, we try to present an overview of the toxicity and related toxicity mechanisms of QDs in different target organs. It is believed that the evaluation of toxicity and the synthesis of environmentally friendly QDs are the primary issues to be addressed for future widespread applications. However, considering the many different types and potential modifications, this review on the potential toxicity of QDs is still not clearly elucidated, and further research is needed on this meaningful topic.

I-III-VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I-III-VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I-III-VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I-III-VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.

Luminescent Quaternary Ag(InxGa1-x)S2/GaSy Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment

Cadmium-free quantum dots (QDs) consisting of silver-indium-gallium-sulfide (AIGS) quaternary semiconductors were successfully synthesized using a metal-dithiocarbamate complex with sufficiently high reactivity to produce metal sulfides. The introduction of a gallium diethyldithiocarbamate precursor decreased the reaction temperature to produce active intermediates, which were subsequently converted into AIGS QDs at 150 °C with silver and indium acetates. Because of the low reaction temperature, AIGS QDs with a tetragonal crystal phase were produced selectively, which favorably generated band-edge emission whose full width at half-maximum is smaller than 40 nm after they were coated with gallium sulfide (GaS_y) shells. The compositional indium/gallium ratio was varied by changing the mixing ratio of the precursors used for the synthesis of the AIGS core, and the band-edge photoluminescence (PL) generated from the AIGS/GaS_y core/shell QDs was blue-shifted with an increase in the gallium content in the core. Consequently, a pure green emission centered at 518 nm was obtained with a PL quantum yield as high as 68%.

Emission tuning of highly efficient quaternary Ag-Cu-Ga-Se/ZnSe quantum dots for white light-emitting diodes

With the blooming development of zero-dimensional nanomaterials, I-III-VI alloying quantum dots (QDs) with outstanding photoelectrical properties have emerged to attract much attention as promising environmentally-friendly substitutions for conventional binary Cd-based QDs. In this work, a facile one-pot method was introduced to synthesize unreported quaternary Ag-Cu-Ga-Se/ZnSe (ACGSe/ZnSe) QDs. A relatively high photoluminescence quantum yield (PL QY) of 71.9% and a tunable emission from 510 to 620 nm were successfully achieved. We explored the roles of alloying compositions in ACGSe/ZnSe QDs, inferring that increased Ag proportion would not only lower the V_defect level which leads to the blue shift of emission, but also slow the ZnSe shelling process owing to the larger lattice distortion. At last, the white light-emitting diodes (WLEDs) were fabricated with ACGSe/ZnSe QDs as the conversion layer, indicating that the as-prepared QDs are a promising candidate for further applications.

Synthesis and electroluminescence of novel white fluorescence quantum dots based on a Zn–Ga–S host

White-light-emitting Ag, Mn: Zn–Ga–S/ZnS quantum dots (QDs) with a gratifying photoluminescence (PL) quantum yield (QY) of up to 90% were prepared, and shown to be ultra-stable, maintaining a high PL intensity at 300 °C or for 32 h of UV illumination.