Positive- and negative-tone structuring of crystalline silicon by laser-assisted chemical etching

Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes

In this contribution, we present novel results on top-down drilling in silicon, the most important semiconductor material, focusing specifically on the influence of the laser parameters. We compare the holes obtained with repetitive single pulses, as well as in different MHz- and GHz-burst regimes. The deepest holes were obtained in GHz-burst mode, where we achieved holes of almost 1 mm depth and 35 µm diameter, which corresponds to an aspect ratio of 27, which is higher than the ones reported so far in the literature, to the best of our knowledge. In addition, we study the influence of the energy repartition within the burst in GHz-burst mode.

Photochemically Activated 3D Printing Inks: Current Status, Challenges, and Opportunities

3D printing with light is enabled by the photochemistry underpinning it. Without fine control over the ability to photochemically gate covalent bond formation by the light at a certain wavelength and intensity, advanced photoresists with functions spanning from on-demand degradability, adaptability, rapid printing speeds, and tailored functionality are impossible to design. Herein, recent advances in photoresist design for light-driven 3D printing applications are critically assessed, and an outlook of the outstanding challenges and opportunities is provided. This is achieved by classing the discussed photoresists in chemistries that function photoinitiator-free and those that require a photoinitiator to proceed. Such a taxonomy is based on the efficiency with which photons are able to generate covalent bonds, with each concept featuring distinct advantages and drawbacks.

Short-Pulse Laser-Assisted Fabrication of a Si-SiO2 Microcooling Device

Thermal management is one of the main challenges in the most demanding detector technologies and for the future of microelectronics. Microfluidic cooling has been proposed as a fully integrated solution to the heat dissipation problem in modern high-power microelectronics. Traditional manufacturing of silicon-based microfluidic devices involves advanced, mask-based lithography techniques for surface patterning. The limited availability of such facilities prevents widespread development and use. We demonstrate the relevance of maskless laser writing to advantageously replace lithographic steps and provide a more prototype-friendly process flow. We use a 20 W infrared laser with a pulse duration of 50 ps to engrave and drill a 525 μm-thick silicon wafer. Anodic bonding to a SiO2 wafer is used to encapsulate the patterned surface. Mechanically clamped inlet/outlet connectors complete the fully operational microcooling device. The functionality of the device has been validated by thermofluidic measurements. Our approach constitutes a modular microfabrication solution that should facilitate prototyping studies of new concepts for co-designed electronics and microfluidics.

Fabrication of nanogap structures through spatially shaped femtosecond laser modification with the assistance of wet chemical etching

Fabricating nanostructures with an extremely small feature size through a near-infrared femtosecond laser is a considerable challenge. In this Letter, we report a flexible, facile, and mask-free method that enables the formation of nanogap structures with a controllable size on silicon. This method involves spatially shaped femtosecond laser single-pulse modification assisted with chemical etching. Nanogaps obtained after etching can be divided into two categories, namely a ring dimer with a nanogap (type I) and Crack-nanogap (type II). The nanogap between the ring dimer could be reduced to 68 nm with a gradual increase in the laser fluence. For the Crack-nanogap obtained through crack propagation induced by stress release during a wet etching process, the smallest gap size is approximately 9 nm.

Curved waveguides in silicon written by a shaped laser beam

We demonstrate, for the first time, the direct writing of curved optical waveguides in monocrystalline silicon with curve radii from 2 mm to 6 cm. The bending loss of the curved waveguides is measured and a good agreement with theoretical values is found. Raman spectroscopy measurements suggest the formation of inhomogeneous amorphous and polycrystalline phases in the laser-modified region. This direct laser-writing method may advance fabrication capabilities for integrated 3D silicon photonic devices.

Laser-induced layers peeling of sputtering coatings at 1064 nm wavelength

Large-scale layers peeling after the laser irradiation of dual ion beam sputtering coatings is discovered and a model is established to explain it. The laser damage morphologies relate to the laser fluence, showing thermomechanical coupling failure at low energy and coating layers separation at high energy. High-pressure gradients appear in the interaction between laser and coatings, resulting in large-scale layer separation. A two-step laser damage model including defect-induced damage process and ionized air wave damage process is proposed to explain the two phenomena at different energy. At relatively high energies (higher than 20 J/cm²), ionization of the air can be initiated, leading to a peeling off effect. The peeling effect is related to the thermomechanical properties of the coating materials.

Pulse-duration dependence of laser-induced modifications inside silicon

The advent of ultrafast infrared lasers provides a unique opportunity for direct fabrication of three-dimensional silicon microdevices. However, strong nonlinearities prevent access to modification regimes in narrow gap materials with the shortest laser pulses. In contrary to surface experiments for which one can always define an energy threshold to initiate modifications, we establish that some other threshold conditions inevitably apply on the pulse duration and the numerical aperture for focusing. In an experiment where we can vary continuously the pulse duration from 4 to 21 ps, we show that a minimum duration of 5.4 ps and a focusing numerical aperture of 0.85 are required to successfully initiate modifications. Below and above thresholds, we investigate the pulse duration dependence of the conditions applied in matter. Despite a modest pulse duration dependence of the energy threshold in the tested range, we found that all pulse durations are not equally performing to achieve highly reproducible modifications. Taken together with previous reports in the femtosecond and nanosecond regimes, this provides important guidelines on the appropriate conditions for internal structuring of silicon.