High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays

Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires

Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications. While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum emission, the relationship between the IQE and shell coating remains unclear. This Letter reports mid-infrared PL measurements on InAs/InGaAs, InAs/AlSb, and InAs/GaSb c/s NWs, together with bare InAs NWs as a reference. Analyses show that the IQE is depressed by a shell coating at 9 K but gets improved by up to approximately 50% for the InGaAs shell coating at 40 -140 K and up to approximately 20% beyond 110 K for the AlSb shell. The effect is ascribed not only to the crystal quality but more importantly to the radial band alignment. The result indicates the high-temperature IQE improvement of the type-I and type-II c/s NWs and the appropriateness of the mid-infrared PL analyses for narrow-gap NW evaluation.

Elliptical gold nanowires: controlled fabrication and plasmonic Fabry-Pérot resonances

Nanowires (NWs) are essential building blocks of photonic devices for guiding light waves. However, the controlled synthesis of non-circular NWs remains challenging. Herein, we develop a bottom-up approach for the fabrication of high-quality elliptical gold NWs with finely tuned geometry engineering by using an advanced ion-track template technology. Compared to ordinary NWs, the rotational symmetry breaking leads to highly polarization-dependent plasmonic responses. Modal analysis shows that the lowest dipolar HE₁ mode splits into two branches where the attenuation of the long-range branch decreases by 40%, while the short-range branch has a stronger enhanced near-field. Novel, to the best of our knowledge, plasmonic Fabry-Pérot resonances on finite NWs are measured. Our method can be extended to fabricate non-circular NWs with other materials, holding potential for novel applications from quantum to collective scales.

III-V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber

Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetectors on silicon, the difficulties in directly growing high-quality III–V on silicon and realizing functionalities have been a challenge. Here, we propose a design of III–V nanowires on silicon (100) substrates, which are self-assembled with gold plasmonic nanostructures, as a key building block for efficient and functional photodetectors on silicon. Partially gold-coated III–V nanowire arrays form a plasmonic-photonic hybrid metasurface, wherein the localized and propagating plasmonic resonances enable high absorption in III–V nanowires. Unlike conventional photodetectors, numerical calculations reveal that the proposed meta-absorber exhibits high sensitivity to the polarization, incident angle, wavelength of input light, as well as the surrounding environment. These features represent that the proposed meta-absorber design can be utilized not only for efficient infrared photodetectors on silicon but for various sensing applications with high sensitivity and functionality.