Tunable single-mode laser on thin film lithium niobate

High-Speed Electro-Optic Modulators Based on Thin-Film Lithium Niobate

Electro-optic modulators (EOMs) are pivotal in bridging electrical and optical domains, essential for diverse applications including optical communication, microwave signal processing, sensing, and quantum technologies. However, achieving the trifecta of high-density integration, cost-effectiveness, and superior performance remains challenging within established integrated photonics platforms. Enter thin-film lithium niobate (LN), a recent standout with its inherent electro-optic (EO) efficiency, proven industrial performance, durability, and rapid fabrication advancements. This platform inherits material advantages from traditional bulk LN devices while offering a reduced footprint, wider bandwidths, and lower power requirements. Despite its recent introduction, commercial thin-film LN wafers already rival or surpass established alternatives like silicon and indium phosphide, benefitting from decades of research. In this review, we delve into the foundational principles and technical innovations driving state-of-the-art LN modulator demonstrations, exploring various methodologies, their strengths, and challenges. Furthermore, we outline pathways for further enhancing LN modulators and anticipate exciting prospects for larger-scale LN EO circuits beyond singular components. By elucidating the current landscape and future directions, we highlight the transformative potential of thin-film LN technology in advancing electro-optic modulation and integrated photonics.

Heterogeneous integration of an on-chip Nd:YAG whispering gallery mode laser with a lithium-niobate-on-insulator platform

The integration of heterogeneous optical components onto an optical platform is crucial for the advancement of photonic chips. To achieve this, efficient coupling of optical signals between components and the platform is essential. Here, we have successfully integrated a Nd:YAG microdisk laser with a lithium-niobate-on-insulator (LNOI) photonic platform by modulating the propagation modes of LNOI. Ridge waveguides are fabricated on the LNOI by carefully adjusting the cross-sectional dimensions to enable the propagation of higher-order propagation modes. This ridge waveguide ensures that the effective refractive index of the higher-order mode closely matches that of the fundamental mode of the Nd:YAG microdisk, ensuring efficient waveguide-microdisk coupling. This on-chip laser, consisting of an Nd:YAG microdisk and LNOI integration, achieves a maximum output power of 23 µW, and a mode suppression ratio of 53.6 dB. This research presents an efficient approach for constructing highly functional heterogeneous integrated optical chips.

27% slope efficiency in a WGM microcavity enabled by an Yb:YAG crystalline film

The choice of a laser gain medium is crucial in achieving efficient and high-power outputs of optically stimulated WGM microcavity lasers. This work employs an Yb:YAG crystalline film as the gain medium for the microdisk laser. The Yb:YAG crystalline film is exfoliated from a bulk of a Yb:YAG crystal by the ion-implantation-enhanced etching method. The crystalline film is shaped into a microdisk through focused ion beam milling. This Yb:YAG microdisk laser achieves a single-mode laser output (with a side-mode-suppression ratio of 27.8 dB) under a 946 nm laser pumping. The maximum slope efficiency reaches 27% with a maximum output power of 1.1 mW.

Thermo-optomechanically induced optical frequency comb in a whispering-gallery-mode resonator

We present a theoretical study that combines thermal and optomechanical effects to investigate their influences on the formation of the optical frequency comb (OFC) in whispering-gallery-mode (WGM) microcavities. The results show that the cut-off order and center frequency of OFC affected by thermal effects exhibit an overall redshift by varying the power and detuning of the pump field, which provides the possibility of tuning the offset frequency of OFC. Our study demonstrates a method to characterize the effect on the generation of OFC and the tuning of its offset frequency in a WGM resonator with opto-thermo-mechanical properties and pave the way for the future development of OFC in thermo-optomechanical environments.

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with a 27 dB internal net gain

A photonic integrated waveguide amplifier fabricated on erbium-ytterbium (Er-Yb) codoped thin-film lithium niobate (TFLN) has been investigated in this work. A small-signal internal net gain of 27 dB is achieved at a signal wavelength of 1532 nm in the fabricated Er-Yb TFLN waveguide amplifier pumped by a diode laser at ≈980 nm. Experimental characterizations reveal the suitability of waveguide fabrication by the photolithography-assisted chemo-mechanical etching (PLACE) technique and also the gain in an Yb-sensitized-Er material. The demonstrated high-gain chip-scale TFLN amplifier is promising for interfacing with established lithium niobate integrated devices, greatly extending the spectrum of TFLN photonic applications.

χ(2) nonlinear photonics in integrated microresonators

Second-order (χ⁽²⁾) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ⁽²⁾ response due to their centrosymmetric structures. A variety of novel material platforms possessing χ⁽²⁾ nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ⁽²⁾ nonlinear effects are introduced. Afterward, we highlight the commonly used χ⁽²⁾ nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ⁽²⁾ nonlinearity in the field of integrated microcavity photonics.

On-chip single-mode thin-film lithium niobate Fabry-Perot resonator laser based on Sagnac loop reflectors

We demonstrate an on-chip single-mode Er³⁺-doped thin-film lithium niobate (Er:TFLN) laser which consists of a Fabry-Perot (FP) resonator based on Sagnac loop reflectors (SLRs). The fabricated Er:TFLN laser has a footprint of 6.5 mm × 1.5 mm with a loaded quality (Q) factor of 1.6 × 10⁵ and a free spectral range (FSR) of 63 pm. We generate the single-mode laser at 1544 nm wavelength with a maximum output power of 44.7 µW and a slope efficiency of 0.18%.

On-chip ytterbium-doped lithium niobate waveguide amplifiers with high net internal gain

Integrated optical systems based on lithium niobate on insulator (LNOI) have shown great potential in recent years. However, the LNOI platform is facing a shortage of active devices. Considering the significant progress made in rare-earth-doped LNOI lasers and amplifiers, the fabrication of on-chip ytterbium-doped LNOI waveguide amplifiers based on electron-beam lithography and inductively coupled plasma reactive ion etching was investigated. The signal amplification at lower pump power (<1 mW) was achieved by the fabricated waveguide amplifiers. A net internal gain of ∼18 dB/cm in the 1064 nm band was also achieved in the waveguide amplifiers under a pump power of 10 mW at 974 nm. This work proposes a new, to the best of our knowledge, active device for the LNOI integrated optical system. It may become an important basic component for lithium niobate thin-film integrated photonics in the future.

Lithium niobate photonics: Unlocking the electromagnetic spectrum

Lithium niobate (LN), first synthesized 70 years ago, has been widely used in diverse applications ranging from communications to quantum optics. These high-volume commercial applications have provided the economic means to establish a mature manufacturing and processing industry for high-quality LN crystals and wafers. Breakthrough science demonstrations to commercial products have been achieved owing to the ability of LN to generate and manipulate electromagnetic waves across a broad spectrum, from microwave to ultraviolet frequencies. Here, we provide a high-level Review of the history of LN as an optical material, its different photonic platforms, engineering concepts, spectral coverage, and essential applications before providing an outlook for the future of LN.

Laser diode-pumped compact hybrid lithium niobate microring laser

We demonstrate a compact hybrid lithium niobate microring laser by butt coupling a commercial 980-nm pump laser diode chip with a high-quality Er³⁺-doped lithium niobate microring chip. Single-mode lasing emission at 1531-nm wavelength from the Er³⁺-doped lithium niobate microring can be observed with the integrated 980-nm laser pumping. The compact hybrid lithium niobate microring laser occupies the chip size of 3 mm × 4 mm × 0.5 mm. The threshold pumping laser power is 6 mW and the threshold current is 0.5 A (operating voltage 1.64 V) at atmospheric temperature. The spectrum featuring single-mode lasing with small linewidth of 0.05 nm is observed. This work explores a robust hybrid lithium niobate microring laser source which has potential applications in coherent optical communication and precision metrology.

Integrated Pockels laser

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 10¹⁸ Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.

On-Chip integration of laser systems led to impressive development in many field of application like LIDAR or AR/VR to cite a few. Here the authors harness Pockels effect in an integrated semiconductor platform achieving fast on-chip configurability of a narrow linewidth laser.

Heterogeneously integrated III-V-on-lithium niobate broadband light sources and photodetectors

Heterogeneous integration of III-V active devices on lithium niobate-on-insulator (LNOI) photonic circuits enable fully integrated transceivers. Here we present the co-integration of InP-based light-emitting diodes (LEDs) and photodetectors on an LNOI photonics platform. Both devices are realized based on the same III-V epitaxial layers stack adhesively bonded on an LNOI waveguide circuit. The light is evanescently coupled between the LNOI and III-V waveguide via a multiple-section adiabatic taper. The waveguide-coupled LEDs have a 3-dB bandwidth of 40 nm. The photodetector features a responsivity of 0.38 A/W in the 1550-nm wavelength range and a dark current of 9 nA at -0.5 V at room temperature.

Integrated ytterbium-doped lithium niobate microring lasers

Integrated and stable microlasers are indispensable building blocks of micro-photonics. Here, we report the realization of an ytterbium-doped lithium niobate microring laser operating in the 1060-nm band under the pump of a 980-nm-band laser. The monolithic laser has a low threshold of 59.32 µW and relatively high output power of 6.44 µW, a state-of-the-art value for rare-earth ions-doped lithium niobate thin-film lasers. The monolithic laser with desirable performance and attractive scalability may find many applications in lithium niobite photonics.

On-chip ytterbium-doped lithium niobate microdisk lasers with high conversion efficiency

Integrated optical systems based on lithium niobate on insulator (LNOI) have attracted the interest of researchers. Recently, erbium-doped LNOI lasers have been realized. However, the reported lasers have a relatively lower conversion efficiency and only operate in the 1550 nm band. In this paper, we demonstrate an LNOI laser operating in the 1060 nm band based on a high Q factor ytterbium-doped LNOI microdisk cavity. The threshold and the conversion efficiency of the laser are 21.19 µW and 1.36%, respectively. To our knowledge, the conversion efficiency is the highest among the reported rare-earth-doped LNOI lasers. This research extends the operating band of LNOI lasers and shows the potential in realizing high-power LNOI lasers.