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Kilinc M, Demirbas U, Thesinga J, Kellert M, Yakovlev A, Kärtner FX, Pergament M. Pushing the tuning limits of femtosecond Yb-based solid-state lasers to 1 µm: a Yb:YVO 4 laser tunable down to 1004 nm. OPTICS LETTERS 2024; 49:5236-5239. [PMID: 39270274 DOI: 10.1364/ol.537902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2024] [Accepted: 08/29/2024] [Indexed: 09/15/2024]
Abstract
We have obtained what we believe to be the shortest fs tuning wavelength (1004 nm) from a Yb-based solid-state laser system. As the working horse, we have chosen Yb:YVO4 due to its blueshifted gain spectrum. While using a single 10 W 952 nm diode for pumping and a semiconductor saturable absorber mirror (SESAM) for mode-locking, we have achieved 266 fs long pulses with up to 1.24 W of output power around 1021 nm. Using an intracavity birefringent filter, the central wavelength of the fs pulses could be tuned smoothly between 1004-1038 nm and 1009-1061 nm while employing the E//a and E//c axis of the material, respectively. By using an additional hard aperture to increase the modulation depth, we have also attained 100 fs level pulses in the 1012.5-1019 nm range, which shows the suitability of the system in seeding cryogenic Yb:YLF-based amplifiers.
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Okuyucu S, Demirbas U, Thesinga J, Edelmann M, Pergament M, Kärtner F. Diode-pumped passively mode-locked femtosecond Yb:YLF laser at 1.1 GHz. OPTICS EXPRESS 2024; 32:15555-15564. [PMID: 38859203 DOI: 10.1364/oe.518081] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Accepted: 03/14/2024] [Indexed: 06/12/2024]
Abstract
We report femtosecond pulse generation at GHz repetition rates with the Yb:YLF gain medium for the first time. A simple, low-cost, and compact architecture is implemented for the potential usage of the system as a low-noise timing jitter source. The system is pumped by 250 mW, 960 nm single-mode diodes from both sides. The semiconductor saturable absorber mirror (SESAM) mode-locked laser is self-starting and generates transform-limited 210 fs long pulses near 1050 nm. The laser's average output power is 40 mW, corresponding to a pulse energy of 36 pJ at 1.1 GHz repetition rate. The measured laser relative intensity noise (RIN) from 1 Hz to 1 MHz is 0.42%. The performance obtained in this initial work is limited by the specifications of the available optics and could be improved significantly by employing custom-designed optical elements.
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Yang T, Liu H, Wu F, Chen H, Wang Q, Wei Z, Zhang J. Self-started Kerr-lens mode-locked thin-disk oscillator. OPTICS LETTERS 2023; 48:4633-4636. [PMID: 37656573 DOI: 10.1364/ol.495730] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Accepted: 08/04/2023] [Indexed: 09/03/2023]
Abstract
Kerr-lens mode-locking (KLM) has been widely used in thin-disk oscillators to generate high-power femtosecond pulses. Here we demonstrate a Kerr-lens mode-locked Yb:YAG thin-disk oscillator that can be self-started under two configurations. The first can deliver 13-W, 235-fs pulses at a repetition rate of 103 MHz; the second delivers 49 W at a repetition rate of 46.5 MHz, whose corresponding pulse energy of 1.05 µJ is, to the best of our knowledge, the highest energy ever obtained in self-started Kerr-lens mode-locked oscillators. A new method to initiate KLM in the form of optical perturbation in a thin-disk oscillator has also been demonstrated.
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Mulder J, Jenkinson K, Toso S, Prato M, Evers WH, Bals S, Manna L, Houtepen AJ. Nucleation and Growth of Bipyramidal Yb:LiYF 4 Nanocrystals-Growing Up in a Hot Environment. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2023; 35:5311-5321. [PMID: 37528840 PMCID: PMC10389792 DOI: 10.1021/acs.chemmater.3c00502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Revised: 05/23/2023] [Indexed: 08/03/2023]
Abstract
Lanthanide-doped LiYF4 (Ln:YLF) is commonly used for a broad variety of optical applications, such as lasing, photon upconversion and optical refrigeration. When synthesized as nanocrystals (NCs), this material is also of interest for biological applications and fundamental physical studies. Until now, it was unclear how Ln:YLF NCs grow from their ionic precursors into tetragonal NCs with a well-defined, bipyramidal shape and uniform dopant distribution. Here, we study the nucleation and growth of ytterbium-doped LiYF4 (Yb:YLF), as a template for general Ln:YLF NC syntheses. We show that the formation of bipyramidal Yb:YLF NCs is a multistep process starting with the formation of amorphous Yb:YLF spheres. Over time, these spheres grow via Ostwald ripening and crystallize, resulting in bipyramidal Yb:YLF NCs. We further show that prolonged heating of the NCs results in the degradation of the NCs, observed by the presence of large LiF cubes and small, irregular Yb:YLF NCs. Due to the similarity in chemical nature of all lanthanide ions our work sheds light on the formation stages of Ln:YLF NCs in general.
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Affiliation(s)
- Jence
T. Mulder
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629HZ Delft, The
Netherlands
| | - Kellie Jenkinson
- Electron
Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - Stefano Toso
- Department
of Nanochemistry, Istituto Italiano di Tecnologia
(IIT), Via Morego 30, 16163 Genova, Italy
| | - Mirko Prato
- Materials
Characterization Facility, Istituto Italiano
di Tecnologia (IIT), Via Morego 30, 16163 Genova, Italy
| | - Wiel H. Evers
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629HZ Delft, The
Netherlands
- Department
of Bionanoscience, Kavli Institute of Nanoscience, Delft University of Technology, van der Maasweg 9, 2629HZ Delft, The
Netherlands
| | - Sara Bals
- Electron
Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - Liberato Manna
- Department
of Nanochemistry, Istituto Italiano di Tecnologia
(IIT), Via Morego 30, 16163 Genova, Italy
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629HZ Delft, The
Netherlands
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Dai T, Chang J, Zhang X, Deng Z, Su Y, Liu X, Hao L, Ni H, Sun J. Dynamic control of the mode-locked fiber laser using a GO/PS modulator. OPTICS LETTERS 2022; 47:6153-6156. [PMID: 37219195 DOI: 10.1364/ol.476990] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Accepted: 11/01/2022] [Indexed: 05/24/2023]
Abstract
This Letter proposes a novel, to the best of our knowledge, transistor-like optical fiber modulator composed of graphene oxide (GO) and polystyrene (PS) microspheres. Unlike previously proposed schemes based on waveguides or cavity enhancement, the proposed method can directly enhance the photoelectric interaction with the PS microspheres to form a light local field. The designed modulator exhibits a distinct optical transmission change (62.8%), with a power consumption of <10 nW. Such low power consumption enables electrically controllable fiber lasers to be switched in various operational regimes, including continuous wave (CW), Q switched mode-locked (QML), and mode-locked (ML). With this all-fiber modulator, the pulse width of the mode-locked signal can be compressed to 12.9 ps, and the corresponding repetition rate is 21.4 MHz.
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Demirbas U, Thesinga J, Beyatli E, Kellert M, Pergament M, Kärtner FX. Continuous-wave Tm:YLF laser with ultrabroad tuning (1772-2145 nm). OPTICS EXPRESS 2022; 30:41219-41239. [PMID: 36366605 DOI: 10.1364/oe.471288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2022] [Accepted: 09/20/2022] [Indexed: 06/16/2023]
Abstract
We report detailed experimental data aiming for rigorous investigation of Tm:YLF laser performance, especially with a focus on tuning behavior. Continuous-wave (cw) lasing performance of Tm:YLF crystals with thulium dopings in the 2-6% range is investigated under diode and Ti:Sapphire pumping at 792 nm and 780 nm, respectively. While employing the c-axis, we have achieved cw lasing thresholds below 20 mW, laser output power up to 1.42 W, and laser slope efficiencies as high as 70% with respect to absorbed pump power. The passive loss of the Tm:YLF crystal is estimated to be as low as 0.05% per cm, corresponding to a crystal figure of merit above 10000. Via employing this low-loss crystal and a 2-mm thick off-surface optical axis birefringent filter (BRF) with strong sideband rejection, a record cw tuning range covering the 1772-2145 nm interval is demonstrated (except a small gap between 1801-1815nm region). Detailed lifetime and emission cross section measurements have been performed to explain the observed performance, and strategies for further performance enhancement are discussed.
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Lin ZL, Xue WZ, Zeng HJ, Zhang G, Zhao Y, Xu X, Xu J, Loiko P, Mateos X, Lin H, Petrov V, Wang L, Chen W. Semiconductor saturable absorber mirror mode-locked Yb:YAP laser. OPTICS EXPRESS 2022; 30:31986-31997. [PMID: 36242269 DOI: 10.1364/oe.464815] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 08/09/2022] [Indexed: 06/16/2023]
Abstract
We report on sub-30 fs pulse generation from a semiconductor saturable absorber mirror mode-locked Yb:YAP laser. Pumping by a spatially single-mode Yb fiber laser at 979 nm, soliton pulses as short as 29 fs were generated at 1091 nm with an average output power of 156 mW and a pulse repetition rate of 85.1 MHz. The maximum output power of the mode-locked Yb:YAP laser amounted to 320 mW for slightly longer pulses (32 fs) at an incident pump power of 1.52 W, corresponding to a peak power of 103 kW and an optical efficiency of 20.5%. To the best of our knowledge, this result represents the shortest pulses ever achieved from any solid-state Yb laser mode-locked by a slow, i.e., physical saturable absorber.
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Demirbas U, Thesinga J, Kellert M, Reuter S, Pergament M, Kärtner FX. Broadly tunable (993-1110 nm) Yb:YLF laser. APPLIED OPTICS 2022; 61:3702-3710. [PMID: 36256411 DOI: 10.1364/ao.456316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Accepted: 04/10/2022] [Indexed: 06/08/2023]
Abstract
We have investigated room-temperature continuous-wave (cw) lasing performance of Yb:YLF oscillators in detail using rod-type crystals with low Yb-doping (2%). The laser is pumped by a low-cost, high brightness, 10 W, 960 nm single-emitter multimode diode. Laser performance is acquired in both E//a and E//c configurations, using 12 different output couplers with transmission ranging from 0.015% to 70%. We have estimated the passive loss of the Yb:YLF crystal as 0.06% per cm, corresponding to an impressive crystal figure of merit above 4000. The low-doping level not only reduces the system losses but also minimizes the thermal load as the low doped crystals enable distribution of heat load in a greater volume. Using the advantages of lower loss and improved thermal behavior, we have achieved cw output power above 4 W, cw slope efficiencies up to 78%, and a record cw tuning range covering the 993-1110 nm region (117 nm). The output power performance achieved in this initial work is limited by the available pump power, and future room-temperature Yb:YLF systems have the potential to produce higher output power levels.
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