Spectrally separable photon-pair generation in dispersion engineered thin-film lithium niobate

Integrated photon pair source based on a silicon nitride micro-ring resonator for quantum memories

We report the design of an integrated photon pair source based on spontaneous four-wave mixing (SFWM), implemented in an integrated micro-ring resonator in the silicon nitride platform (Si3N4). The signal photon is generated with emission at 606 nm and bandwidth of 3.98 MHz, matching the spectral properties of praseodymium ions (Pr), while the idler photon is generated at 1430.5 nm matching the wavelength of a CWDM channel in the E-band. This novel, to the best of our knowledge, device is designed to interact with a quantum memory based on a Y2SiO5 crystal doped with Pr3+ ions, in which we used cavity-enhanced SFWM along with dispersion engineering to reach the required wavelength and the few megahertz signal photon spectral bandwidth.

Demonstration of Hong-Ou-Mandel interference in an LNOI directional coupler

Interference between single photons is key for many quantum optics experiments and applications in quantum technologies, such as quantum communication or computation. It is advantageous to operate the systems at telecommunication wavelengths and to integrate the setups for these applications in order to improve stability, compactness and scalability. A new promising material platform for integrated quantum optics is lithium niobate on insulator (LNOI). Here, we realise Hong-Ou-Mandel (HOM) interference between telecom photons from an engineered parametric down-conversion source in an LNOI directional coupler. The coupler has been designed and fabricated in house and provides close to perfect balanced beam splitting. We obtain a raw HOM visibility of (93.5 ± 0.7) %, limited mainly by the source performance and in good agreement with off-chip measurements. This lays the foundation for more sophisticated quantum experiments in LNOI.

Sub-1 Volt and high-bandwidth visible to near-infrared electro-optic modulators

Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product (VπL), optical loss, and EO bandwidth. However, applications in optical imaging, optogenetics, and quantum science generally require devices operating in the visible-to-near-infrared (VNIR) wavelength range. Here, we realize VNIR amplitude and phase modulators featuring VπL's of sub-1 V ⋅ cm, low optical loss, and high bandwidth EO response. Our Mach-Zehnder modulators exhibit a VπL as low as 0.55 V ⋅ cm at 738 nm, on-chip optical loss of ~0.7 dB/cm, and EO bandwidths in excess of 35 GHz. Furthermore, we highlight the opportunities these high-performance modulators offer by demonstrating integrated EO frequency combs operating at VNIR wavelengths, with over 50 lines and tunable spacing, and frequency shifting of pulsed light beyond its intrinsic bandwidth (up to 7x Fourier limit) by an EO shearing method.

Lithium niobate photonics: Unlocking the electromagnetic spectrum

Lithium niobate (LN), first synthesized 70 years ago, has been widely used in diverse applications ranging from communications to quantum optics. These high-volume commercial applications have provided the economic means to establish a mature manufacturing and processing industry for high-quality LN crystals and wafers. Breakthrough science demonstrations to commercial products have been achieved owing to the ability of LN to generate and manipulate electromagnetic waves across a broad spectrum, from microwave to ultraviolet frequencies. Here, we provide a high-level Review of the history of LN as an optical material, its different photonic platforms, engineering concepts, spectral coverage, and essential applications before providing an outlook for the future of LN.