Duo Y, Yin Y, He R, Chen R, Song Y, Long H, Wang J, Wei T. Phosphor-free micro-pyramid InGaN-based white light-emitting diode with a high color rendering index on a β-Ga
2O
3 substrate.
OPTICS LETTERS 2024;
49:254-257. [PMID:
38194541 DOI:
10.1364/ol.512307]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Accepted: 12/11/2023] [Indexed: 01/11/2024]
Abstract
We demonstrate the InGaN/GaN-based monolithic micro-pyramid white (MPW) vertical LED (VLED) grown on (-201)-oriented β-Ga2O3 substrate by selective area growth. The transmission electron microscopy (TEM) reveals an almost defect-free GaN pyramid structure on (10-11) sidewalls, including stacked dual-wavelength multi-quantum wells (MQWs). From the electroluminescence (EL) spectra of the fabricated MPW VLED, a white light emission with a high color rendering index (CRI) of 97.4 is achieved. Furthermore, the simulation shows that the light extraction efficiency (LEE) of the MPW VLED is at least 4 times higher compared with the conventional planar LED. These results show that the MPW VLED grown on β-Ga2O3 has great potential for highly efficient phosphor-free white light emission.
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