Wu B, Xie X, Zheng H, Li S, Ding J, He J, Liu Z, Liu Y. Engineering anisotropy in 2D transition metal dichalcogenides via heterostructures.
OPTICS LETTERS 2023;
48:5867-5870. [PMID:
37966739 DOI:
10.1364/ol.503999]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Accepted: 10/19/2023] [Indexed: 11/16/2023]
Abstract
Two-dimensional (2D) semiconductors featuring low-symmetry crystal structures hold an immense potential for the design of advanced optoelectronic devices, leveraging their inherent anisotropic attributes. While the synthesis techniques for transition metal dichalcogenides (TMDs) have matured, a promising avenue emerges: the induction of anisotropy within symmetric TMDs through interlayer van der Waals coupling engineering. Here, we unveil the creation of heterostructures (HSs) by stacking highly symmetric MoSe2 with low-symmetry ReS2, introducing artificial anisotropy into monolayer MoSe2. Through a meticulous analysis of angle-dependent photoluminescence (PL) spectra, we discern a remarkable anisotropic intensity ratio of approximately 1.34. Bolstering this observation, the angle-resolved Raman spectra provide unequivocal validation of the anisotropic optical properties inherent to MoSe2. This intriguing behavior can be attributed to the in-plane polarization of MoSe2, incited by the deliberate disruption of lattice symmetry within the monolayer MoSe2 structure. Collectively, our findings furnish a conceptual blueprint for engineering both isotropic and anisotropic HSs, thereby unlocking an expansive spectrum of applications in the realm of high-performance optoelectronic devices.
Collapse