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Zhou C, He X, Xiao M, Ma D, Chen W, Zhou Z. Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier. FRONTIERS OF OPTOELECTRONICS 2024; 17:16. [PMID: 38833110 DOI: 10.1007/s12200-024-00118-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Accepted: 05/16/2024] [Indexed: 06/06/2024]
Abstract
In current documented studies, it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2 μm band, generally falling below -20.0 dB. To address this issue, we present a novel wavelength conversion device assisted by a waveguide amplifier, incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier, thereby achieving a notable conversion efficiency exceeding 0 dB. The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter, which enables an upsurge in conversion efficiency to -15.54 dB under 100 mW of pump power. Furthermore, the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB. Avoiding the use of external optical amplifiers, this device enables efficient and high-bandwidth wavelength conversion, showing promising applications in various fields, such as optical communication, sensing, imaging, and beyond.
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Affiliation(s)
- Chen Zhou
- School of Physical Sciences, University of Science and Technology of China, Hefei, 230026, China
- Aerospace Laser Technology and System Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Xiwen He
- Aerospace Laser Technology and System Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Mingyue Xiao
- Aerospace Laser Technology and System Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Deyue Ma
- Aerospace Laser Technology and System Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Weibiao Chen
- Aerospace Laser Technology and System Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Zhiping Zhou
- Aerospace Laser Technology and System Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China.
- Hangzhou Aijie Optoelectronic Technology Co. Ltd., Hangzhou, 311400, China.
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Bonneville DB, Osornio-Martinez CE, Dijkstra M, García-Blanco SM. High on-chip gain spiral Al 2O 3:Er 3+ waveguide amplifiers. OPTICS EXPRESS 2024; 32:15527-15536. [PMID: 38859200 DOI: 10.1364/oe.516705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Accepted: 02/27/2024] [Indexed: 06/12/2024]
Abstract
We demonstrate reactively sputtered Al2O3:Er3+ waveguide amplifiers with an erbium concentration of 3.9 × 1020 ions/cm3, capable of achieving over 30 dB small signal net gain at 1532 nm using bidirectional pumping at 1480 nm. We observe on chip output powers of 10.2-13.6 dBm of amplified signal power at 1532 nm for a 12.9 cm waveguide amplifier considering -25.4 dB of lumped coupling losses per facet. Annealing was used to improve the performance of the devices, which were patterned using electron beam lithography and reactive ion etching. This result, to our knowledge, represents record breaking on-chip internal net gain for Al2O3:Er3+ waveguide amplifiers, which show promise over other technologies due to wafer scalability and promise of easy monolithic integration with other material platforms to support a wide variety of applications.
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Tao S, Song H, Zhao D, Yang Y, Wang S, Yan J, Wei J, Wang X, Qin G, Wang F, Zhang D. Strip loaded waveguide amplifiers based on erbium-doped nanocomposites with 17 dB internal net gain. OPTICS EXPRESS 2024; 32:7931-7939. [PMID: 38439462 DOI: 10.1364/oe.514318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Accepted: 02/05/2024] [Indexed: 03/06/2024]
Abstract
We propose a strip loaded amplifier employing SU-8 as the loaded waveguide and nanoparticles (NPs)-polymethyl methacrylate (PMMA) as the cladding layer. By leveraging the undoped SU-8 loaded waveguide, the polymer waveguide amplifier accomplished remarkably low transmission losses, reaching as low as 1.8 dB/cm at 1530 nm. We prepared NPs-PMMA nanocomposite by utilizing NaLu0.1Y0.7F4: Er3+, Yb3+ @NaLuF4 core-shell nanoparticles, which exhibited a significantly enhanced lifetime of 6.15 ms. An internal net gain of up to 17.7 dB was achieved on a strip loaded waveguide with a length as short as 0.5 cm when the on-chip pump power was 77 mW. Signal enhancement (SE) was measured at different wavelengths, revealing that the strip loaded waveguide exhibited broadband SE ranging from 1510 nm to 1570 nm, covering the C-band. To the best of our knowledge, this work has achieved the highest gain results reported thus far on a polymer matrix and provides an efficient method for optical amplification in passive devices on silicon and Si3N4 platforms, leveraging the ease of integration of polymer materials with diverse photonic platforms.
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Zheng JX, Li HY, Tian KS, Yu YH, Liu XQ, Chen QD. Arbitrary fabrication of complex lithium niobate three-dimensional microstructures for second harmonic generation enhancement. OPTICS LETTERS 2024; 49:850-853. [PMID: 38359198 DOI: 10.1364/ol.515576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2023] [Accepted: 01/12/2024] [Indexed: 02/17/2024]
Abstract
Lithium niobate (LN) crystal plays important roles in future integrated photonics, but it is still a great challenge to efficiently fabricate three-dimensional micro-/nanostructures on it. Here, a femtosecond laser direct writing-assisted liquid back-etching technology (FsLDW-LBE) is proposed to achieve the three-dimensional (3D) microfabrication of lithium niobate (LN) with high surface quality (Ra = 0.422 nm). Various 3D structures, such as snowflakes, graphic arrays, criss-cross arrays, and helix arrays, have been successfully fabricated on the surface of LN crystals. As an example, a microcone array was fabricated on LN crystals, which showed a strong second harmonic signal enhancement with up to 12 times bigger than the flat lithium niobate. The results indicate that the method provides a new approach for the microfabrication of lithium niobate crystals for nonlinear optics.
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