Nanoscale footprints of self-running gallium droplets on GaAs surface

Cathodoluminescence Spectroscopy in Graded InxGa1-xN

InGaN materials are widely used in optoelectronic devices due to their excellent optical properties. Since the emission wavelength of the full-composition-graded In_xGa_1-xN films perfectly matches the solar spectrum, providing a full-spectrum response, this makes them suitable for the manufacturing of high-efficiency optoelectronic devices. It is extremely important to study the optical properties of materials, but there are very few studies of the luminescence of full-composition-graded In_xGa_1-xN ternary alloy. In this work, the optical properties of full-composition-graded In_xGa_1-xN films are studied by cathodoluminescence (CL). The CL spectra with multiple luminescence peaks in the range of 365-1000 nm were acquired in the cross-sectional and plan-view directions. The CL spectroscopy studies were carried out inside and outside of microplates formed under the indium droplets on the InGaN surface, which found that the intensity of the light emission peaks inside and outside of microplates differed significantly. Additionally, the paired defects structure is studied by using the spectroscopic method. A detailed CL spectroscopy study paves the way for the growth and device optimization of high-quality, full-composition-graded In_xGa_1-xN ternary alloy materials.

Au-catalyzed desorption of GaAs oxides

Thermal desorption of native oxides on GaAs(100), (110) and (111)B surfaces around Au particles are studied in vacuum using in situ microspectroscopy. Two temperature-dependent desorption regimes, common to all surfaces, are identified. The low-temperature desorption regime spatially limited to the vicinity of some Au nanoparticles (NPs) is catalytically enhanced, resulting in oxide pinholes which expand laterally into macro holes many times the size of the catalyzing NPs and with shapes dictated by the underlying crystallography. The high-temperature desorption regime causes homogeneous oxides thinning and, ultimately, complete oxide desorption. The temperature difference between the two regimes is ∼25 °C-60 °C. After oxide desorption and depending on Au size and GaAs surface orientation, Au particles may dissolve the fresh GaAs surface and form mobile AuGa₂/Ga core/shell units, or form stationary AuGa₂ crystallites, or the catalyzing Au particles may run with minimal reaction with the GaAs surface. These results will add to the fundamental understanding of many Au-based nanofabrication processes, particularly the epitaxial growth of vertical and lateral nanowires.

Exploring Au Droplet Motion in Nanowire Growth: A Simple Route toward Asymmetric GaP Morphologies

Here we show a new nanowire growth procedure, exploring the thermally activated motion of Au droplets on III-V surfaces. We show that by setting a single growth parameter we can activate the crawling motion of Au droplets in vacuum and locally modify surface composition in order to enhance vapor-solid (VS) growth along oxide-free areas on the trail of the metal particle. Asymmetric VS growth rates are comparable in magnitude to the vapor-liquid-solid growth, producing unconventional wurtzite GaP morphologies, which shows negligible defect density as well as optical signal in the green spectral region. Finally, we demonstrate that this effect can also be explored in different substrate compositions and orientations with the final shape finely tuned by group III flow and nanoparticle size. This distinct morphology for wurtzite GaP nanomaterials can be interesting for the design of nanophotonics devices.

Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces

Ordered nanodroplet arrays and aligned nanodroplet chains are fabricated using ion-beam-directed self-organization. The morphological evolution of nanodroplets formed on GaAs (100) substrates under ion beam bombardment is characterized by scanning electron microscopy and atomic force microscopy. Ordered Ga nanodroplets are self-assembled under ion beam bombardment at off-normal incidence angles. The uniformity, size, and density of Ga nanodroplets can be tuned by the incident angles of ion beam. The ion beam current also plays a critical role in the self-ordering of Ga nanodroplets, and it is found that the droplets exhibit a similar droplet size but higher density and better uniformity with increasing the ion beam current. In addition, more complex arrangements of nanodroplets are achieved via in situ patterning and ion-beam-directed migration of Ga atoms. Particularly, compared to the destructive formation of nanodroplets through direct ion beam bombardment, the controllable assembly of nanodroplets on intact surfaces can be used as templates for fabrication of ordered semiconductor nanostructures by droplet epitaxy.

Ammonolysis of polycrystalline and amorphized gallium arsenide GaAs to polytype-specific nanopowders of gallium nitride GaN

Single-step N-for-As metathesis reactions of gallium arsenide GaAs with ammonia NH₃ at temperatures in the range 650–950 °C for 6–90 hours afforded high yields of pure nanocrystalline powders of the wide bandgap semiconductor gallium nitride GaN.

Self-Running Liquid Metal Drops that Delaminate Metal Films at Record Velocities

This paper describes a new method to spontaneously accelerate droplets of liquid metal (eutectic gallium indium, EGaIn) to extremely fast velocities through a liquid medium and along predefined metallic paths. The droplet wets a thin metal trace (a film ∼100 nm thick, ∼ 1 mm wide) and generates a force that simultaneously delaminates the trace from the substrate (enhanced by spontaneous electrochemical reactions) while accelerating the droplet along the trace. The formation of a surface oxide on EGaIn prevents it from moving, but the use of an acidic medium or application of a reducing bias to the trace continuously removes the oxide skin to enable motion. The trace ultimately provides a sacrificial pathway for the metal and provides a mm-scale mimic to the templates used to guide molecular motors found in biology (e.g., actin filaments). The liquid metal can accelerate along linear, curved and U-shaped traces as well as uphill on surfaces inclined by 30 degrees. The droplets can accelerate through a viscous medium up to 180 mm/sec which is almost double the highest reported speed for self-running liquid metal droplets. The actuation of microscale objects found in nature (e.g., cells, microorganisms) inspires new mechanisms, such as these, to manipulate small objects. Droplets that are metallic may find additional applications in reconfigurable circuits, optics, heat transfer elements, and transient electronic circuits; the paper demonstrates the latter.

Reliable synthesis of self-running Ga droplets on GaAs (001) in MBE using RHEED patterns

Self-running Ga droplets on GaAs (001) surfaces are repeatedly and reliably formed in a molecular beam epitaxial (MBE) chamber despite the lack of real-time imaging capability of a low-energy electron microscope (LEEM) which has so far dominated the syntheses and studies of the running droplets phenomenon. Key to repeatability is the observation and registration of an appropriate reference point upon which subsequent sublimation conditions are based. The reference point is established using reflection high-energy electron diffraction (RHEED), not the noncongruent temperature used in LEEM where temperature discrepancies up to 25°C against MBE is measured. Our approach removes instrumental barriers to the observation and control of this complex dynamical system and may extend the usefulness of many droplet-related processes.

Self-running Ga droplets on GaAs (111)A and (111)B surfaces

Thermal decomposition of GaAs (111)A and (111)B surfaces in ultrahigh vacuum results in self-running Ga droplets. Although Ga droplets on the (111)B surface run in one main direction, those on the (111)A surface run in multiple directions, frequently taking sharp turns and swerving around pyramidal etch pits, leaving behind mixed smooth-triangular trails as a result of simultaneous in-plane driving and out-of-plane crystallographic etching. The droplet motion is partially guided by dislocation strain fields. The results hint at the possibilities of using subsurface dislocation network and prepatterned, etched surfaces to control metallic droplet motion on single-crystal semiconductor surfaces.

Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy

In this paper, the formation of Ga droplets on photo-lithographically patterned GaAs (100) and the control of the size and density of Ga droplets by droplet epitaxy using molecular beam epitaxy are demonstrated. In extension of our previous result from the journal Physical Status Solidi A, volume 209 in 2012, the sharp contrast of the size and density of Ga droplets is clearly observed by high-resolution scanning electron microscope, atomic force microscope, and energy dispersive X-ray spectrometry. Also, additional monolayer (ML) coverage is added to strength the result. The density of droplets is an order of magnitude higher on the trench area (etched area), while the size of droplets is much larger on the strip top area (un-etched area). A systematic variation of ML coverage results in an establishment of the control of size and density of Ga droplets. The cross-sectional line profile analysis and root mean square roughness analysis show that the trench area (etched area) is approximately six times rougher. The atomic surface roughness is suggested to be the main cause of the sharp contrast of the size and density of Ga droplets and is discussed in terms of surface diffusion.