High-pressure synthesis of SmGe3

The new samarium germanide SmGe3 is obtained by high-pressure high-temperature synthesis of pre-reacted mixtures of samarium and germanium at a pressure of 9.5 GPa and temperatures between 1073 and 1273 K. SmGe3 decomposes at 470(5) K into SmGe2, α-Sm3Ge5 and a hitherto unknown phase. SmGe3 exhibits a superstructure of the cubic Cu3Au-type. Transmission electron microscopy measurements of crystalline particles and prepared lamellae indicate a high density of defects on the nanoscale. Selected area electron diffraction and elaborate X-ray powder diffraction measurements consistently indicate a 2a 0 × 2a 0 × 2a 0 superstructure adopting space group F m 3 ¯ m $Fm\overline{3}m$ with a = 8.6719(2) Å.

The untypical high-pressure Zintl phase SrGe6

The binary strontium germanide SrGe6 was synthesized at high-pressure high-temperature conditions of approximately 10 GPa and typically 1400 K before quenching to ambient conditions. At ambient pressure, SrGe6 decomposes in a monotropic fashion at T = 680(10) K into SrGe2 and Ge, indicating its metastable character. Single-crystal X-ray diffraction data indicate that the compound SrGe6 adopts a new monoclinic structure type comprising a unique three-dimensional framework of germanium atoms with unusual cages hosting the strontium cations. Quantum chemical analysis of the chemical bonding shows that the framework consists of three- and four- bonded germanium atoms yielding the precise electron count Sr[(4bGe0]4[(3b)Ge−]2 in accordance with the 8 − N rule and the Zintl concept. Conflicting with that, a pseudo-gap in the electronic density of states appears clearly below the Fermi level, and elaborate bonding analysis reveals additional Sr–Ge interactions in the concave coordination polyhedron of the strontium atoms.

High-Pressure Synthesis and Chemical Bonding of Barium Trisilicide BaSi₃

BaSi₃ is obtained at pressures between 12(2) and 15(2) GPa and temperatures from 800(80) and 1050(105) K applied for one to five hours before quenching. The new trisilicide crystallizes in the space group I4¯2m (no. 121) and adopts a unique atomic arrangement which is a distorted variant of the CaGe₃ type. At ambient pressure and 570(5) K, the compound decomposes in an exothermal reaction into (hP3)BaSi₂ and two amorphous silicon-rich phases. Chemical bonding analysis reveals covalent bonding in the silicon partial structure and polar multicenter interactions between the silicon layers and the barium atoms. The temperature dependence of electrical resistivity and magnetic susceptibility measurements indicate metallic behavior.

Modulated vacancy ordering in SrGe6− x (x≈0.45)

The structural properties of modulated SrGe6− x (x≈0.45) were investigated by means of single-crystal and powder X-ray diffraction combined with quantum chemical calculations. The framework compound SrGe6− x adopts a defect variant of the EuGa2Ge4-type crystal structure. Samples of the binary compound with nominal compositions 0≤x≤0.5 were synthesized at pressures from 5 to 6 GPa and a temperature of typically 1400 K. The product reveals diffraction peaks of the EuGa2Ge4-type subcell plus additional reflections indicating an ordered superstructure. Detailed crystal structure analysis evidences the incommensurate nature of the superstructure and a modulation of the vacancy ordering in the germanium network. The computations have shown that the non-stoichiometric composition of the framework with its local defect organization affects the calculated charge of the strontium anions. Although the chemical composition is close to a charge-balanced situation, temperature-dependent resistivity measurements showed metal-type conductivity. At ambient pressure SrGe6− x decomposes exothermally and irreversibly at T=680(10) K into SrGe2 and germanium, indicating its metastable nature at ambient pressure.

Lutetium Trigermanide LuGe3: High-Pressure Synthesis, Superconductivity, and Chemical Bonding

LuGe₃ was obtained under high-pressure and high-temperature conditions at pressures between 8(1) and 14(2) GPa and at temperatures in the range from 1100(150) to 1500(150) K. The high-pressure phase is isotypic to DyGe₃ and decomposes at ambient pressure and T = 690 K mainly into ( cF8)Ge and LuGe_{2- x}. Chemical bonding analysis of LuGe₃ reveals two-center electron-deficient Ge-Ge bonds, multicenter polar Lu-Ge interactions, and lone pairs on germanium. Magnetic susceptibility, specific heat, and electrical conductivity measurements indicate transition into a superconducting state below T_c = 3.3(3) K.