Hall Coefficient and Resistivity of Hydrogenated Pd in Thin Films*

Optical, magnetic, and charge-carriers transport properties of a transition metal: bulk palladium

Three parametric models of Drude-Lorentz (DL) are used to describe the spectral variation of the dielectric function of bulk palladium. An improved version of the acceptance-probability-controlled simulated annealing method is applied to optimize the values of the parameters involved in the models: high-frequency dielectric constant, free-electron collision frequency and corresponding relaxation time, oscillation strengths, nominal resonance frequencies, and Lorentzian widths. Normalization of the oscillation strengths allows the introduction of a new parameter in the context of the original DL model: the number density ratio, which is the ratio between the number density of conduction electrons and the number density of metal atoms. Inclusion of this parameter in the optimization procedure allows us to evaluate additional parameters related to the charge-carriers transport: the number density of conduction electrons, average effective mass of conduction electrons and holes, Fermi energy and electronic density of states at the Fermi energy, electrical resistivity, intrinsic mean-free path of conduction electrons, electronic heat capacity, Hall coefficient, as well as the mobilities of conduction electrons and holes. The paramagnetic and diamagnetic susceptibilities are also included as derived parameters. A parametric form of the bulk Pd dielectric function, with incorporation of the average local electric field effect in the Lorentz contribution, is reported.