Surfaces and Interfaces of Nanoscale Silicon Materials

Ultrathin Piezotronic Transistors with 2 nm Channel Lengths

Because silicon transistors are rapidly approaching their scaling limit due to short-channel effects, alternative technologies are urgently needed for next-generation electronics. Here, we demonstrate ultrathin ZnO piezotronic transistors with a ∼2 nm channel length using inner-crystal self-generated out-of-plane piezopotential as the gate voltage to control the carrier transport. This design removes the need for external gate electrodes that are challenging at nanometer scale. These ultrathin devices exhibit a strong piezotronic effect and excellent pressure-switching characteristics. By directly converting mechanical drives into electrical control signals, ultrathin piezotronic devices could be used as active nanodevices to construct the next generation of electromechanical devices for human-machine interfacing, energy harvesting, and self-powered nanosystems.

Nanometre-thick single-crystalline nanosheets grown at the water-air interface

To date, the preparation of free-standing 2D nanomaterials has been largely limited to the exfoliation of van der Waals solids. The lack of a robust mechanism for the bottom-up synthesis of 2D nanomaterials from non-layered materials has become an obstacle to further explore the physical properties and advanced applications of 2D nanomaterials. Here we demonstrate that surfactant monolayers can serve as soft templates guiding the nucleation and growth of 2D nanomaterials in large area beyond the limitation of van der Waals solids. One- to 2-nm-thick, single-crystalline free-standing ZnO nanosheets with sizes up to tens of micrometres are synthesized at the water-air interface. In this process, the packing density of surfactant monolayers adapts to the sub-phase metal ions and guides the epitaxial growth of nanosheets. It is thus named adaptive ionic layer epitaxy (AILE). The electronic properties of ZnO nanosheets and AILE of other materials are also investigated.

Growth of Metal Phthalocyanine on Deactivated Semiconducting Surfaces Steered by Selective Orbital Coupling

Using scanning tunneling microscopy and density functional theory, we show that the molecular ordering and orientation of metal phthalocyanine molecules on the deactivated Si surface display a strong dependency on the central transition-metal ion, driven by the degree of orbital hybridization at the heterointerface via selective p-d orbital coupling. This Letter identifies a selective mechanism for modifying the molecule-substrate interaction which impacts the growth behavior of transition-metal-incorporated organic molecules on a technologically relevant substrate for silicon-based devices.