Dong H, Cabrera W, Qin X, Brennan B, Zhernokletov D, Hinkle CL, Kim J, Chabal YJ, Wallace RM. Silicon interfacial passivation layer chemistry for high-k/InP interfaces.
ACS APPLIED MATERIALS & INTERFACES 2014;
6:7340-7345. [PMID:
24750024 DOI:
10.1021/am500752u]
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Abstract
The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-k/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 °C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-k dielectric, which may form volatile species and evaporate from the sample surface.
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