Hüpkes J, Owen JI, Pust SE, Bunte E. Chemical etching of zinc oxide for thin-film silicon solar cells.
Chemphyschem 2011;
13:66-73. [PMID:
22162035 PMCID:
PMC3531622 DOI:
10.1002/cphc.201100738]
[Citation(s) in RCA: 97] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2011] [Indexed: 11/12/2022]
Abstract
Abstract
Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.
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