2D Image Sensing Arrays with NIP Diodes

Amorphous Silicon Photodiode-Thin Film Transistor Image Sensor with Diode on Top Structure

We have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of the thin film transistor array. We call this ‘diode on top’ technology or DOTTY. The active diode area can be as high as 93%, compared to 50% for our conventional photodiode-TFT technology. This leads to a higher signal to noise performance, which is important for medical X-ray applications.

Empirical and theoretical investigation of the noise performance of indirect detection, active matrix flat-panel imagers (AMFPIs) for diagnostic radiology

Noise properties of active matrix, flat-panel imagers under conditions relevant to diagnostic radiology are investigated. These studies focus on imagers based upon arrays with pixels incorporating a discrete photodiode coupled to a thin-film transistor, both fabricated from hydrogenated amorphous silicon. These optically sensitive arrays are operated with an overlying x-ray converter to allow indirect detection of incident x rays. External electronics, including gate driver circuits and preamplification circuits, are also required to operate the arrays. A theoretical model describing the signal and noise transfer properties of the imagers under conditions relevant to diagnostic radiography, fluoroscopy, and mammography is developed. This frequency-dependent model is based upon a cascaded systems analysis wherein the imager is conceptually divided into a series of stages having intrinsic gain and spreading properties. Predictions from the model are compared with x-ray sensitivity and noise measurements obtained from individual pixels from an imager with a pixel format of 1536 x 1920 pixels at a pixel pitch of 127 microns. The model is shown to be in excellent agreement with measurements obtained with diagnostic x rays using various phosphor screens. The model is used to explore the potential performance of existing and hypothetical imagers for application in radiography, fluoroscopy, and mammography as a function of exposure, additive noise, and fill factor. These theoretical predictions suggest that imagers of this general design incorporating a CsI: Tl intensifying screen can be optimized to provide detective quantum efficiency (DQE) superior to existing screen-film and storage phosphor systems for general radiography and mammography. For fluoroscopy, the model predicts that with further optimization of a-Si:H imagers, DQE performance approaching that of the best x-ray image intensifier systems may be possible. The results of this analysis suggest strategies for future improvements of this imaging technology.

Empirical investigation of the signal performance of a high-resolution, indirect detection, active matrix flat-panel imager (AMFPI) for fluoroscopic and radiographic operation

Signal properties of the first large-area, high resolution, active matrix, flat-panel imager are reported. The imager is based on an array of 1536 x 1920 pixels with a pixel-to-pixel pitch of 127 microns. Each pixel consists of a discrete amorphous silicon n-i-p photodiode coupled to an amorphous silicon thin-film transistor. The imager detects incident x rays indirectly by means of an intensifying screen placed over the array. External acquisition electronics send control signals to the array and process analog imaging signals from the pixels. Considerations for operation of the imager in both fluoroscopic and radiographic modes are detailed and empirical signal performance data are presented with an emphasis on exploring similarities and differences between the two modes. Measurements which characterize the performance of the imager were performed as a function of operational parameters in the absence or presence of illumination from a light-emitting diode or x rays. These measurements include characterization of the drift and magnitude of the pixel dark signal, the size of the pixel switching transient, the temporal behavior of pixel sampling and the implied maximum frame rate, the dependence of relative pixel efficiency and pixel response on photodiode reverse bias voltage and operational mode, the degree of linearity of pixel response, and the trapping and release of charge from metastable states in the photodiodes. In addition, X-ray sensitivity as a function of energy for a variety of phosphor screens for both fluoroscopic and radiographic operation is reported. Example images of a line-pair pattern and an anthropomorphic phantom in each mode are presented along with a radiographic image of a human hand. General and specific improvements in imager design are described and anticipated developments are discussed. This represents the first systematic investigation of the operation and properties in both radiographic and fluoroscopic modes of an imager incorporating such an array.