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Choi YR, Zheng M, Bai F, Liu J, Tok ES, Huang Z, Sow CH. Laser-induced greenish-blue photoluminescence of mesoporous silicon nanowires. Sci Rep 2014; 4:4940. [PMID: 24820533 PMCID: PMC4018655 DOI: 10.1038/srep04940] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2014] [Accepted: 04/09/2014] [Indexed: 11/26/2022] Open
Abstract
Solid silicon nanowires and their luminescent properties have been widely studied, but lesser is known about the optical properties of mesoporous silicon nanowires (mp-SiNWs). In this work, we present a facile method to generate greenish-blue photoluminescence (GB-PL) by fast scanning a focused green laser beam (wavelength of 532 nm) on a close-packed array of mp-SiNWs to carry out photo-induced chemical modification. The threshold of laser power is 5 mW to excite the GB-PL, whose intensity increases with laser power in the range of 5–105 mW. The quenching of GB-PL comes to occur beyond 105 mW. The in-vacuum annealing effectively excites the GB-PL in the pristine mp-SiNWs and enhances the GB-PL of the laser-modified mp-SiNWs. A complex model of the laser-induced surface modification is proposed to account for the laser-power and post-annealing effect. Moreover, the fast scanning of focused laser beam enables us to locally tailor mp-SiNWs en route to a wide variety of micropatterns with different optical functionality, and we demonstrate the feasibility in the application of creating hidden images.
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Affiliation(s)
- Yan-Ru Choi
- 1] Hwa Chong Institution, 661 Bukit Timah Rd., Singapore 269734, Singapore [2]
| | - Minrui Zheng
- 1] Department of Physics, 2 Science Drive 3, National University of Singapore (NUS), Singapore 117542, Singapore [2]
| | - Fan Bai
- 1] Department of Physics, Institute of Advanced Materials, Partner State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University (HKBU), Kowloon Tong, Hong Kong SAR, P. R. China [2]
| | - Junjun Liu
- Department of Physics, Institute of Advanced Materials, Partner State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University (HKBU), Kowloon Tong, Hong Kong SAR, P. R. China
| | - Eng-Soon Tok
- Department of Physics, 2 Science Drive 3, National University of Singapore (NUS), Singapore 117542, Singapore
| | - Zhifeng Huang
- 1] Department of Physics, Institute of Advanced Materials, Partner State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University (HKBU), Kowloon Tong, Hong Kong SAR, P. R. China [2] HKBU Institute of Research and Continuing Education, A211, Virtual University Park Building, South Area Hi-Tech Industrial Park, Shenzhen, Guangdong Province, P. R. China
| | - Chorng-Haur Sow
- Department of Physics, 2 Science Drive 3, National University of Singapore (NUS), Singapore 117542, Singapore
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Abstract
ABSTRACTWe combine photoluminescence excitation spectroscopy and photoconductivity to extract information about the bandgap and particle size distribution of porous silicon. This allows us to specify the influence of size dispersion and to show that different methods to determine absorption probe different parts of the size distribution.
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Mauckner G, Hamann J, Rebitzer W, Baier T, Thonke K, Sauer R, Halbleiterphysik A. Origin of the Infrared Band From Porous Silicon. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-358-489] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTThe photoluminescence (PL) infrared (IR)-band of p-doped porous Si (PS) films is studied by steady-state and time-resolved PL and by photoluminescence excitation (PLE) in detail. In analogy to the S-band in the visible the IR-band shifts to higher energies with reduced average nanocrystal size. The IR- and S-bands are very different in their decay behavior and in their recombination lifetimes. The temperature-dependent PL intensity shows non-exponential decay with lifetime distributions in the nsec-µsec range in contrast to the stretched exponential decay shape of the S-band corresponding to lifetime distributions in the μsec -msec range. The origin of the IR-band is likely related to radiative recombination at deep defects in Si nanocrystals with quantum-upshifted band gaps.
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Li Z, Cheng XL, Wang J, Chen HH. Theoretical Study of Interaction Between S2 and SiHx (x = 1, 2, 3) in Porous Silicon. CHINESE J CHEM PHYS 2010. [DOI: 10.1088/1674-0068/23/03/281-286] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Chen Q, Li X, Zhang Y. Improvement mechanism of photoluminescence in iron-passivated porous silicon. Chem Phys Lett 2001. [DOI: 10.1016/s0009-2614(01)00762-x] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Sweryda-Krawiec B, Cassagneau T, Fendler JH. Surface Modification of Silicon Nanocrystallites by Alcohols. J Phys Chem B 1999. [DOI: 10.1021/jp992298p] [Citation(s) in RCA: 47] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Beata Sweryda-Krawiec
- Center for Advanced Material Processing, Clarkson University, Potsdam, New York, 13676
| | - Thierry Cassagneau
- Center for Advanced Material Processing, Clarkson University, Potsdam, New York, 13676
| | - Janos H. Fendler
- Center for Advanced Material Processing, Clarkson University, Potsdam, New York, 13676
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Sailor M, Heinrich J, Lauerhaas J. Luminescent porous silicon: Synthesis, chemistry, and applications. SEMICONDUCTOR NANOCLUSTERS - PHYSICAL, CHEMICAL, AND CATALYTIC ASPECTS 1997. [DOI: 10.1016/s0167-2991(97)81104-4] [Citation(s) in RCA: 27] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
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Chang WK, Liao MY, Gleason KK. Characterization of Porous Silicon by Solid-State Nuclear Magnetic Resonance. ACTA ACUST UNITED AC 1996. [DOI: 10.1021/jp961921s] [Citation(s) in RCA: 27] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- W. K. Chang
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
| | - M. Y. Liao
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
| | - K. K. Gleason
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Cerofolini GF, Balboni R, Bisero D, Corni F, Frabboni S, Ottaviani G, Tonini R, Brusa RS, Zecca A, Ceschini M, Giebel G, Pavesi L. Hydrogen precipitation in highly oversaturated single-crystalline silicon. ACTA ACUST UNITED AC 1995. [DOI: 10.1002/pssa.2211500202] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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Tolbert SH, Herhold AB, Johnson CS, Alivisatos AP. Comparison of quantum confinement effects on the electronic absorption spectra of direct and indirect gap semiconductor nanocrystals. PHYSICAL REVIEW LETTERS 1994; 73:3266-3269. [PMID: 10057333 DOI: 10.1103/physrevlett.73.3266] [Citation(s) in RCA: 51] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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