Compound Semiconductor Nanocrystals formed by Sequential Ion Implantation

Effect of annealing on carrier transport properties of GaN-incorporated silicon

GaN nanocrystals were formed in a silicon matrix by sequential implantation of Ga⁺ and N₂⁺ ions followed by either Furnace Annealing (FA) or Rapid Thermal Annealing (RTA).

Understanding ion beam synthesis of nanostructures: Modeling and atomistic simulations

Ion implantation, specified by parameters like ion energy, ion fluence, ion flux and sub-strate temperature, has become a well-established tool to synthesize buried low-dimensional nanostructures. In general, in ion beam synthesis the evolution of nanostructures is determined by the competition between ballistic and thermodynamic effects. A kinetic 3D lattice Monte-Carlo model is introduced, which allows for a proper incorporation of collisional mixing and phase separation within supersaturated solid-solutions. It is shown, that for both the ballistically and thermodynamically dominated regimes, the Gibbs-Thomson relation is the key ingredient in understanding nanocluster evolution. Various aspects of precipitate evolution during implantation, formation of ordered arrays of nanophase domains by focused ion implantation and compound nanocluster synthesis are discussed.

Nanocrystals and Quantum Dots Formed by High-Dose Ion Implantation

Ion implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO2) and crystalline (AI2O3) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amophous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.