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Sedov V, Martyanov A, Neliubov A, Tiazhelov I, Savin S, Eremchev I, Eremchev M, Pavlenko M, Mandal S, Ralchenko V, Naumov A. Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystals. PHILOSOPHICAL TRANSACTIONS. SERIES A, MATHEMATICAL, PHYSICAL, AND ENGINEERING SCIENCES 2024; 382:20230167. [PMID: 38043572 DOI: 10.1098/rsta.2023.0167] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Accepted: 07/20/2023] [Indexed: 12/05/2023]
Abstract
Tin-Vacancy (Sn-V) colour centres in diamond have a spin coherence time in the millisecond range at temperatures of 2 K, so they are promising to be used in diamond-based quantum optical devices. However, the incorporation of large Sn atoms into a dense diamond lattice is a non-trivial problem. The objective of our work is to use microwave plasma-assisted chemical vapour deposition (CVD) to grow Sn-doped diamond with submicron SnO2 particles as a solid-state source of impurity. Well-faceted diamond microcrystals with sizes of a few micrometres were formed on AlN substrates. The photoluminescence (PL) signal with zero-phonon line (ZPL) peak for Sn-V centre at ≈620 nm was measured at room temperature (RT) and at 7 K. The peak width (full width at half-maximum) was measured to be 1.1-1.7 nm at RT and ≈0.05 nm at 7 K. The observed variations of ZPL shape and position, in particular, narrowing of PL peak at RT and formation of single-line fine structure at low-T, are attributed to strain in the crystallites. The diamond doping with Sn via CVD process offers a new route to from Sn-V colour centre in the bulk of the diamond crystallites. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.
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Affiliation(s)
- Vadim Sedov
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Street 38, Moscow 119991, Russia
| | - Artem Martyanov
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Street 38, Moscow 119991, Russia
| | - Arthur Neliubov
- Center for Engineering Physics, Skolkovo Institute Science and Technology, Nobel Street, Building 1, Moscow 121205, Russia
- Lebedev Physical Institute of the Russian Academy of Sciences, Troitsk, Moscow 108840, Russia
| | - Ivan Tiazhelov
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Street 38, Moscow 119991, Russia
| | - Sergey Savin
- MIREA - Russian Technological University, Prospect Vernadskogo 78, Moscow 119454, Russia
| | - Ivan Eremchev
- Moscow Pedagogical State University, Moscow 119435, Russia
| | - Maksim Eremchev
- Lebedev Physical Institute of the Russian Academy of Sciences, Troitsk, Moscow 108840, Russia
- Moscow Pedagogical State University, Moscow 119435, Russia
| | - Margarita Pavlenko
- Moscow Pedagogical State University, Moscow 119435, Russia
- National Research University Higher School of Economics, Moscow 109028, Russia
| | - Soumen Mandal
- School of Physics and Astronomy, Cardiff University, Queen's Buildings, The Parade, Cardiff, UK
| | - Victor Ralchenko
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Street 38, Moscow 119991, Russia
- Harbin Institute of Technology, 92 Xidazhi Street, Harbin 150001, People's Republic of China
| | - Andrei Naumov
- Lebedev Physical Institute of the Russian Academy of Sciences, Troitsk, Moscow 108840, Russia
- Moscow Pedagogical State University, Moscow 119435, Russia
- Institute of Spectroscopy RAS, Troitsk, Moscow 108840, Russia
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Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD. COATINGS 2020. [DOI: 10.3390/coatings10100939] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
In this work, the substrate holders of three principal geometries (flat, pocket, and pedestal) were designed based on E-field simulations. They were fabricated and then tested in microwave plasma-assisted chemical vapor deposition process with the purpose of the homogeneous growth of 100-μm-thick, low-stress polycrystalline diamond film over 2-inch Si substrates with a thickness of 0.35 mm. The effectiveness of each holder design was estimated by the criteria of the PCD film quality, its homogeneity, stress, and the curvature of the resulting “diamond-on-Si” plates. The structure and phase composition of the synthesized samples were studied with scanning electron microscopy and Raman spectroscopy, the curvature was measured using white light interferometry, and the thermal conductivity was measured using the laser flash technique. The proposed pedestal design of the substrate holder could reduce the stress of the thick PCD film down to 1.1–1.4 GPa, which resulted in an extremely low value of displacement for the resulting “diamond-on-Si” plate of Δh = 50 μm. The obtained results may be used for the improvement of already existing, and the design of the novel-type, MPCVD reactors aimed at the growth of large-area thick homogeneous PCD layers and plates for electronic applications.
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Rotkin SV, Gogotsi Y. Analysis of non-planar graphitic structures: from arched edge planes of graphite crystals to nanotubes. ACTA ACUST UNITED AC 2016. [DOI: 10.1007/s10019-001-0152-4] [Citation(s) in RCA: 94] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
Affiliation(s)
- Slava V. Rotkin
- Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
| | - Yury Gogotsi
- Drexel University, Department of Materials Engineering, 3141 Chestnut St., Philadelphia, PA 19104, USATel.: , Fax:
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Wang H, Lunt BM, Gates RJ, Asplund MC, Shutthanandan V, Davis RC, Linford MR. Carbon/ternary alloy/carbon optical stack on mylar as an optical data storage medium to potentially replace magnetic tape. ACS APPLIED MATERIALS & INTERFACES 2013; 5:8407-8413. [PMID: 23964822 DOI: 10.1021/am401693u] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
A novel write-once-read-many (WORM) optical stack on Mylar tape is proposed as a replacement for magnetic tape for archival data storage. This optical tape contains a cosputtered bismuth-tellurium-selenium (BTS) alloy as the write layer sandwiched between thin, protective films of reactively sputtered carbon. The composition and thickness of the BTS layer were confirmed by Rutherford Backscattering (RBS) and atomic force microscopy (AFM), respectively. The C/BTS/C stack on Mylar was written to/marked by 532 nm laser pulses. Under the same conditions, control Mylar films without the optical stack were unaffected. Marks, which showed craters/movement of the write material, were characterized by optical microscopy and AFM. The threshold laser powers for making marks on C/BTS/C stacks with different thicknesses were explored. Higher quality marks were made with a 60× objective compared to a 40× objective in our marking apparatus. The laser writing process was simulated with COMSOL.
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Affiliation(s)
- Hao Wang
- Department of Chemistry and Biochemistry, ‡Department of Information Technology, and ∥Deparment of Physics and Astronomy, Brigham Young University , Provo, Utah 84602, United States
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