Light Scattering Measurement Of Surface Topography During Formation Of Titanium Silicide

Surface Roughening During Titanium Silicide Formation: a Comparison Between Si(100) and Poly-Si Substrates

We demonstrate that the formation of TiSi2 for Ti films deposited on undoped Si(100) substrates leads to rougher surfaces than for Ti films deposited on undoped poly-Si substrates. The successive formations of TiSi2, C49 (high resistivity) and C54 (low resistivity) phases from titanium films deposited on either Si(100) or poly-Si substrates were monitored in situ during rapid thermal annealing using elastic light scattering, x-ray diffraction and resistance measurements. For both types of substrates, the roughening occurs only during the formation of the first TiSi2, phase (C49) by light scattered from lateral length scales of ˜0.5 μm. Atomic force microscopy (AFM) images. quantified using Fourier filtering, are consistent with the light scattering results.

Ambipolar electrical transport in semiconducting single-wall carbon nanotubes

Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers--the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.