Mazet L, Yang SM, Kalinin SV, Schamm-Chardon S, Dubourdieu C. A review of molecular beam epitaxy of ferroelectric BaTiO
3 films on Si, Ge and GaAs substrates and their applications.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2015;
16:036005. [PMID:
27877816 PMCID:
PMC5099853 DOI:
10.1088/1468-6996/16/3/036005]
[Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2015] [Revised: 05/14/2015] [Accepted: 05/14/2015] [Indexed: 06/05/2023]
Abstract
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.
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