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Park B, Spaepen F, Poate JM, Priolo F, Jacobson DC. Composition- and Temperature-Dependence of Ion Mixing in Amorphous Si/Ge Artificial Multilayers. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-128-243] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTAmorphous Si/Ge artificial multilayers with a repeat length of around 60A have been partially mixed with 1.5 MeV Ar+ ions at temperatures in the range 77–673K. The change in the intensity of the first X-ray diffraction peak resulting from the composition modulation is used to determine the mixing lengths. The diffusive component of the square of the mixing length, at a given dose, is independent of the dose rate and has an Arrhenius-type temperature dependence, with activation enthalpies between 0.19 and 0.22 eV, depending on the average composition.
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