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Wetzel C, Nitta S, Takeuchi T, Yamaguchi S, Amano H, Akasaki I. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect. ACTA ACUST UNITED AC 2014. [DOI: 10.1557/s1092578300001034] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
A study of the optoelectronic properties of strained 40 nm Ga1−xInxN layers on GaN films is presented. The fact of pseudomorphic strain leads to a new interpretation of the film composition when derived from x-ray scattering. In addition we directly confirm that strain induces huge piezoelectric fields in this uniaxial system by the observation of Franz-Keldysh oscillations in photoreflection. As a function of composition (0 < x < 0.2) and strain we derive the electronic band gap energy and the piezoelectric field strength. We interpret both in terms of effective bowing parameters and piezoelectric coefficients, respectively. From a spatially resolved micro photoluminescence at room temperature we find no evidence for spatial band gap or composition variations of more than 60 meV over the length scale from 1 to 50 μm (x=0.187) in our material. At the same time, an observed discrepancy between photoluminescence peak energy and photoreflection band gap energy increases with x to some 160 meV. We attribute this redshift to photon assisted tunneling in the huge piezoelectric fields (Franz-Keldysh effect).
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