Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys

Heterojunction polarization enhancement and shielding for AlGaN-based solar-blind ultraviolet avalanche detectors

AlGaN-based solar-blind ultraviolet avalanche detectors have huge potentials in the fields of corona discharge monitoring, biological imaging, etc. Here, we study the impact of the heterojunction polarization-related effects on the AlGaN-based solar-blind ultraviolet avalanche detectors. Our work confirms that the polarization heterojunction is beneficial to reducing avalanche bias and lifting avalanche gain by improving the electric field in the depletion region, while the polarization-induced fixed charges will lead to a redistribution of the electrons, in turn shielding the charges and weakening the electric field enhancement effect. This shielding effect will need external bias to eliminate, and that is why the polarization heterojunction cannot work at relatively low bias but has an enhancement effect at high bias. Controlling the doping level between the hetero-interface can affect the shielding effect. An unintentionally doped polarization heterojunction can effectively reduce the shielding effect, thus reducing the avalanche bias. The conclusions also hold true for the negative polarization regime. We believe our findings can provide some useful insights for the design of the AlGaN-based solar-blind ultraviolet detectors.

Investigation of optical polarization characteristics of ultraviolet-C AlGaN multiple quantum wells by angle-resolved cathodoluminescence

AlGaN-based ultraviolet-C (UV-C) light-emitting diodes (LEDs) face challenges related to their extremely low external quantum efficiency, which is predominantly attributed to the remarkably inadequate transverse magnetic (TM) light extraction efficiency (LEE). In this study, we employ angle-resolved cathodoluminescence (ARCL) spectroscopy to assess the optical polarization of (0001)-oriented AlGaN multiple quantum well (MQW) structures in UV-C LEDs, in conjunction with a focused ion beam and scanning electron microscopy (FIB/SEM) system to etch samples with various inclination angles (θ) of sidewall. This technique effectively distinguishes the spatial distribution of TM- and transverse electric (TE)-polarized photons contributing to the luminescence of the MQW structure. CL spectroscopy confirms that UV-C LEDs with a θ of 35° exhibit the highest CL signal compared to samples with other θ. Furthermore, we establish a model using finite difference time domain (FDTD) simulation to validate the mechanism of the outcomes. The complementary contribution of TM and TE photons at different specific angles are distinguished by ARCL and confirmed by simulation. At angles near the sidewall, the CL is dominated by the TM photons, which mainly contribute to the increased LEE and the decreased degree of polarization (DOP) to make the spatial distribution of CL more uniform. Additionally, this method allows us to analyze the polarization of light without the need for polarizers, enabling the differentiation of TE and TM modes. This distinction provides flexibility for selecting different emission mode based on various application requirements. The presented approach not only opens up new opportunities for enhanced UV-C light extraction but also provides valuable insights for future endeavors in device fabrication and epitaxial film growth.

Quantitative study on the photoemission of AlGaN nanoarrays based on the three-dimensional transportation within a four-step process

Photocathodes play a crucial role in photoelectronic imaging and vacuum electronic devices. The quantum efficiency of photocathodes, which determines their performance, can be enhanced through materials engineering. However, the quantum efficiency of conventional planar photocathodes remains consistently low, at around 25%. In this paper, we propose what we believe is a novel structure of AlGaN nanowire array to address this issue. We investigate the photoemission characteristics of the nanowire array using the "four-step" process, which takes into account optical absorption, electron transportation, electron emission, and electron collection. We compare the quantum efficiency of nanowire arrays with different structure sizes and Al components. After studying the effect of incident light at various angles on the nanowire array photocathode, we identify the optimal dimensional parameters: a height of 400∼500 nm and a wire width of 200∼300 nm. Furthermore, we improved the collection efficiency of the photocathode by introducing a built-in/external electric field, and obtained a 104.4% enhancement of the collection current with the built-in electric field, meanwhile the photocurrent was increased by 87% compared to the case without the external electric field. These findings demonstrate the potential of optimizing photocathode performance through the development of a novel model and adjustment of parameters, offering a promising approach for photocathode applications.

Metal-semiconductor-metal solar-blind ultraviolet photodetector based on Al0.55Ga0.45N/Al0.4Ga0.6N/Al0.65Ga0.35N heterostructures

We have designed a metal-semiconductor-metal (MSM) solar-blind ultraviolet (UV) photodetector (PD) by utilizing Al0.55Ga0.45N/Al0.4Ga0.6N/Al0.65Ga0.35N heterostructures. The interdigital Ni/Au metal stack is deposited on the Al0.55Ga0.45N layer to form Schottky contacts. The AlGaN hetero-epilayers with varying Al content contribute to the formation of a two-dimensional electron gas (2DEG) conduction channel and the enhancement of the built-in electric field in the Al0.4Ga0.6N absorption layer. This strong electric field facilitates the efficient separation of photogenerated electron-hole pairs. Consequently, the fabricated PD exhibits an ultra-low dark current of 1.6 × 10-11 A and a broad spectral response ranging from 220 to 280 nm, with a peak responsivity of 14.08 A/W at -20 V. Besides, the PD demonstrates an ultrahigh detectivity of 2.28 × 1013 Jones at -5 V. Furthermore, to investigate the underlying physical mechanism of the designed solar-blind UV PD, we have conducted comprehensive two-dimensional device simulations.

Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nm

The design of semiconductor-based photonic devices requires precise knowledge of the refractive index of the optical materials, a not constant parameter over the operating temperature range. However, the variation of the refractive index with the temperature, the thermo-optic coefficient, is itself temperature-dependent. A precise characterization of the thermo-optic coefficient in a wide temperature range is therefore essential for the design of nonlinear optical devices, active and passive integrated photonic devices and, more in general, for the semiconductor technology explored at different wavelengths, from the visible domain to the infrared or ultraviolet spectrum. In this paper, after an accurate ellipsometric and micro-Raman spectroscopy characterization, the temperature dependence of the thermo-optic coefficient ([Formula: see text]) for 4H-SiC and GaN in a wide range of temperature between room temperature to T = 500 K in the visible range spectrum, at a wavelength of λ = 632.8 nm, is experimentally evaluated. For this purpose, using the samples as a Fabry-Perot cavity, an interferometric technique is employed. The experimental results, for both semiconductors, show a linear dependence with a high determination coefficient, R² of 0.9648 and 0.958, for 4H-SiC and GaN, respectively, in the considered temperature range.

High-responsivity dual-band ultraviolet photodetector based on Ga2O3/GaN heterostructure

Ultraviolet photodetectors have aroused wide concern based on wide-band-gap semiconductors, such as GaN and Ga₂O₃. Exploiting multi-spectral detection provides unparalleled driving force and direction for high-precision ultraviolet detection. Here we demonstrate an optimized design strategy of Ga₂O₃/GaN heterostructure bi-color ultraviolet photodetector, which presents extremely high responsivity and UV-to-visible rejection ratio. The electric field distribution of optical absorption region was profitably modified by optimizing heterostructure doping concentration and thickness ratio, thus further facilitating the separation and transport of photogenerated carriers. Meanwhile, the modulation of Ga₂O₃/GaN heterostructure band offset leads to the fluent transport of electrons and the blocking of holes, thereby enhancing the photoconductive gain of the device. Eventually, the Ga₂O₃/GaN heterostructure photodetector successfully realizes dual-band ultraviolet detection and achieves high responsivity of 892/950 A/W at the wavelength of 254/365 nm, respectively. Moreover, UV-to-visible rejection ratio of the optimized device also keeps at a high level (∼10³) while exhibiting dual-band characteristic. The proposed optimization scheme is anticipated to provide significant guidance for the reasonable device fabrication and design on multi-spectral detection.

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al x Ga2-x O3 Sidewalls

AlGaN and GaN sidewalls were turned into Al x Ga2-x O3 and Ga2O3, respectively, by thermal oxidation to improve the optoelectrical characteristics of deep ultraviolet (DUV) light-emitting diodes (LEDs). The thermally oxidized Ga2O3 is a single crystal with nanosized voids homogenously distributed inside the layer. Two oxidized Al x Ga2-x O3 layers were observed on the sidewall of the AlGaN layer in transmission electron microscopy images. The first oxidized Al x Ga2-x O3 layer is a single crystal, while the second oxidized Al x Ga2-xO3 layer is a single crystal with numerous nanosized voids inside. The composition of Al in the first oxidized Al x Ga2-x O3 layer is higher than that in the second one. The thermal oxidation at high temperature degrades the quality of the p-GaN layer and increases the forward voltage from 8.18 to 11.36 V. The thermally oxidized Al x Ga2-x O3 sidewall greatly enhances the light extraction efficiency of the lateral light of the DUV LEDs by combined mechanisms of holey structure, graded refractive index, high transparency, and tensile stress. Consequently, the light output power of the DUV LEDs increases from 0.69 to 0.88 mW by introducing a 420 nm thick Al x Ga2-x O3 sidewall oxidized at 900 °C, in which the enhancement of light output power can reach 27.5%.

Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously

Deep-ultraviolet (DUV) solar-blind communication (SBC) shows distinct advantages of non-line-of-sight propagation and background noise negligibility over conventional visible-light communication. AlGaN-based DUV micro-light-emitting diodes (µ-LEDs) are an excellent candidate for a DUV-SBC light source due to their small size, low power consumption, and high modulation bandwidth. A long-haul DUV-SBC system requires the light source exhibiting high output power, high modulation bandwidth, and high rate, simultaneously. Such a device is rarely reported. A parallel-arrayed planar (PAP) approach is here proposed to satisfy those requirements. By reducing the dimensions of the active emission mesa to micrometer scale, DUV µ-LEDs with ultrahigh power density are created due to their homogeneous injection current and enhanced planar isotropic light emission. Interconnected PAP µ-LEDs with a diameter of 25 µm are produced. This device has an output power of 83.5 mW with a density of 405 W cm^-2 at 230 mA, a wall-plug efficiency (WPE) of 4.7% at 155 mA, and a high -3 dB modulation bandwidth of 380 MHz. The remarkable high output power and efficiency make those devices a reliable platform to develop high-modulation-bandwidth wireless communication and to meet the requirements for bio-elimination.

Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Single event burnout (SEB) is a great threat to gallium nitride (GaN) power devices for aerospace applications. This paper is dedicated to the investigation of the SEB mechanism in a GaN power device using a femtosecond pulsed laser. In the test, the SEB of a commercial p-GaN power device was triggered by a focused laser beam with a wavelength of 620 nm, and the irradiation-sensitive area of the devices was identified. We observed that the damage modes were consistent with the results of heavy ion experiments. The vertical breakdown of the drain is proposed as the dominant mechanism of SEB. We also provide a schematic representation of the leakage path formation using the electrical data obtained following laser-induced SEB. This study provides an important reference for consideration of device reliability and application prospects.

Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity

In this work, we have proposed and fabricated a metal/Ga₂O₃/GaN hybrid structure metal-semiconductor-metal ultraviolet photodetector with low dark current and high responsivity. The Schottky contact of Ni/Ga₂O₃ makes the Ga₂O₃ layer fully depleted. The strong electric field in the Ga₂O₃ depletion region can push the photo-induced electrons from the Ga₂O₃ layer into the GaN layer for more efficient carrier transport. Therefore, the hybrid structure simultaneously utilizes the advantage of the absorption to solar-blind ultraviolet light by the Ga₂O₃ layer and the high electron mobility of the GaN layer. Thus, the dark current and the photocurrent for the proposed device can be greatly improved. As a result, an extremely high photo-to-dark-current ratio of 1.46 × 10⁶ can be achieved. Furthermore, quick rise and fall times of 0.213 s and 0.027 s at the applied bias of 6 V are also obtained, respectively.

Self-powered asymmetric metal-semiconductor-metal AlN deep ultraviolet detector

Self-powered ultraviolet detectors may find application in aviation and military fields. Here we demonstrate a self-powered asymmetric metal-semiconductor-metal (MSM) deep ultraviolet (DUV) detector with an Ni/Al electrode contact to AlN, and a photoelectric response current increase from dark current (I_d) 2.6 × 10^-12 A to 1.0 × 10^-10 A after UV illumination (I_p) at 0 V bias. To further improve device performance, trenches are etched in AlN, and the Ni/Al electrodes are deposited in trenches to form a three-dimensional MSM (3D-MSM) structure. The improved performance is attributed to the stronger electric field from the asymmetric electrode and a shorter carrier migration path from the 3D-MSM device configuration. Our work will promote the development and application of DUV self-powered devices.

Numerical investigations into polarization-induced self-powered GaN-based MSM photodetectors

Traditional GaN-based metal-semiconductor-metal (MSM) photodetector (PD) features a symmetric structure, and thus a poor lateral carrier transport can be encountered, which can decrease the photocurrent and responsivity. To improve its photoelectric performance, we propose GaN-based MSM photodetectors with an AlGaN polarization layer structure on the GaN absorption layer. By using the AlGaN polarization layer, the electric field in the metal/GaN Schottky junction can be replaced by the electric fields in the metal/AlGaN Schottky junction and the AlGaN/GaN heterojunction. The increased polarization electric field can enhance the transport for the photogenerated carriers. More importantly, such polarization electric field cannot be easily screened by free carriers, thus showing the detectability for the even stronger illumination intensity. Moreover, we also conduct in-depth parametric investigations into the impact of different designs on the photocurrent and the responsivity. Hence, device physics regarding such proposed MSM PDs has been summarized.

Effect of lateral diffusion of photoelectrons in the reflection-mode varied-doping AlGaN photocathode on resolution

To obtain a high resolution of the reflection-mode AlGaN photocathode by establishing the modulation transfer function (MTF) model of this photocathode, the influence of emission layer thickness T_e, electron diffusion length L_d, recombination velocity at back-interface V_b, and optical absorption coefficient α on MTF for varied-doping and uniform-doping Al_0.42Ga_0.58N photocathodes have been given. The computational results suggest that varied-doping structure has great potentiality in improving both resolution and quantum efficiency of the reflection-mode Al_0.42Ga_0.58N photocathode. This improvement is mainly attributed to the reduced lateral diffusion of photoelectrons, which is caused by an electric field generated by the varied-doping structure, and hence the photoelectron transportation towards photocathode surface is promoted.

Exploring superlattice DBR effect on a micro-LED as an electron blocking layer

The role of a superlattice distributed Bragg reflector (SL DBR) as the p-type electron blocking layer (EBL) in a GaN micro-light-emitting diode (micro-LED) is numerically investigated to improve wall-plug efficiency (WPE). The DBR consists of AlGaN/GaN superlattice (high refractive index layer) and GaN (low refractive index layer). It is observed that the reflectivity of the p-region and light extraction efficiency (LEE) increase with the number of DBR pairs. The AlGaN/GaN superlattice EBL is well known to reduce the polarization effect and to promote hole injection. Thus, the superlattice DBR structure shows a balanced carrier injection and results in a higher internal quantum efficiency (IQE). In addition, due to the high refractive-index layer replaced by the superlattice, the conductive DBR results in a lower operation voltage. As a result, WPE is improved by 22.9% compared to the identical device with the incorporation of a conventional p-type EBL.

Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs

Multiresistant pathogens such as methicillin-resistant Staphylococcus aureus (MRSA) cause serious postoperative infections. A skin tolerant far-UVC (< 240 nm) irradiation system for their inactivation is presented here. It uses UVC LEDs in combination with a spectral filter and provides a peak wavelength of 233 nm, with a full width at half maximum of 12 nm, and an irradiance of 44 µW/cm2. MRSA bacteria in different concentrations on blood agar plates were inactivated with irradiation doses in the range of 15-40 mJ/cm2. Porcine skin irradiated with a dose of 40 mJ/cm2 at 233 nm showed only 3.7% CPD and 2.3% 6-4PP DNA damage. Corresponding irradiation at 254 nm caused 15-30 times higher damage. Thus, the skin damage caused by the disinfectant doses is so small that it can be expected to be compensated by the skin's natural repair mechanisms. LED-based far-UVC lamps could therefore soon be used in everyday clinical practice to eradicate multiresistant pathogens directly on humans.

Whispering-gallery mode InGaN microdisks on GaN substrates

Microdisks fabricated with III-nitride materials grown on GaN substrates are demonstrated, taking advantage of the high material quality of homoepitaxial films and advanced micro-fabrication processes. The epitaxial structure consists of InGaN/GaN multi-quantum wells (MQWs) sandwiched between AlGaN/GaN and InAlN/GaN superlattices as cladding layers for optical confinement. Due to lattice-matched growth with low dislocations, an internal quantum efficiency of ∼40% is attained, while the sidewalls of the etched 8 µm-diameter microdisks patterned by microsphere lithography are optically smooth to promote the formation of whispering-gallery modes (WGMs) within the circular optical cavities. Optically pumped lasing with low threshold of ∼5.2 mJ/cm² and quality (Q) factor of ∼3000 at the dominant lasing wavelength of 436.8 nm has been observed. The microdisks also support electroluminescent operation, demonstrating WGMs consistent with the photoluminescence spectra and with finite-difference time-domain (FDTD) simulations.

Comprehensive Analysis of Metal Modulated Epitaxial GaN

While metal modulated epitaxy (MME) has been shown useful for hyperdoping, where hole concentrations 40 times higher than other techniques have been demonstrated, and the ability to control phase separation in immiscible III-nitrides, the complexity of the dynamically changing surface conditions during the cyclic growth is poorly understood. While MME is capable of superb crystal quality, performing MME in an improper growth regime can result in defective material. These complications have made the transfer of MME knowledge challenging. This work provides a comprehensive study of the conditions necessary for achieving the benefits of MME while avoiding undesirable defects. The effects of growth temperature, Ga/N ratio, and excess Ga dose per MME growth cycle on the morphological, structural, electronic, and optical properties of unintentionally doped (UID) MME grown gallium nitride (GaN) have been investigated. Optimal structural and electrical quality were achieved for GaN films grown at ∼650 °C, at pre-bilayer Ga coverage and at the moderate droplet regime. However, high defect concentrations were observed at the lowest growth temperatures, and counter to traditional MBE, as the excess Ga dose transitioned from bilayer coverage to the low droplet regime. Optoelectronic properties were optimal for films grown at intermediate growth temperatures, an excess Ga dose condition just before the droplet formation, and, at a III/V ratio of 1.3. Optimization of growth temperatures, Ga/N ratios, and excess Ga dose results in a range of growth conditions achieving smooth surfaces, step-flow surface morphology, and high crystalline quality films with low threading dislocation densities, allowing researchers to utilize the extensive advantages of MME.

Scale dependent performance of metallic light-trapping transparent electrodes

The optical and electrical performance of light trapping metallic electrodes is investigated. Reflection losses from metallic contacts are shown to be dramatically reduced compared to standard metallic contacts by leveraging total internal reflection at the surface of an added dielectric cover layer. Triangular wire arrays are shown to exhibit increased performance with increasing size, whereas cylindrical wires continue to exhibit diffractive losses as their size is increased. These trends are successfully correlated with radiation patterns from individual metallic wires. Triangular metallic electrodes with a metal areal coverage of 25% are shown to enable a polarization-averaged transmittance of >90% across the wavelength range 0.46-1.1 µm for an electrode width of 2 µm, with a peak transmission of 97%, a degree of polarization of <0.2%, and a sheet resistance of 0.35 Ω/sq. A new figure of merit is introduced to evaluate the light trapping potential of surface-shaped electrodes.

Demonstration of ohmic contact using ${{\rm MoO}_{\rm x}}/{\rm Al}$MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs

The ${{\rm MoO}_{\rm x}}/{\rm Al}$MoO_x/Al electrode was designed and fabricated on p-GaN and sapphire with good ohmic behavior and decent deep ultraviolet (DUV) reflectivity, respectively. The influences of ${{\rm MoO}_{\rm x}}$MoO_x thickness and annealing condition on the electrical and optical behaviors of the ${{\rm MoO}_{\rm x}}/{\rm Al}$MoO_x/Al structure were investigated. Surface morphology of ${{\rm MoO}_{\rm x}}$MoO_x with different thicknesses reveals a 3D growth mode. Partial decomposition of ${{\rm MoO}_{\rm x}}$MoO_x was discovered, which helps in the formation of ohmic contact between ${{\rm MoO}_{\rm x}}$MoO_x and Al. The potential for application in deep ultraviolet light-emitting-diodes (DUV-LEDs) has also been demonstrated.

Deep-ultraviolet aperiodic-oscillation emission of AlGaN films

In this Letter, we describe an aperiodic-oscillation emission phenomenon originating from the Fabry-Perot effect in the deep-ultraviolet backscattering fluorescence spectrum of the $c$c-plane AlGaN film, which is related to the dispersion of its ordinary refractive index near the band edge. Based on this fluorescence spectrum, the ordinary refractive index of the AlGaN film near the band edge could be directly obtained. Certainly, by means of variable angle spectroscopic ellipsometry, the ordinary refractive index of the AlGaN film could be also achieved. Comparing the results obtained by both methods, we discovered that the refractive indices are quite similar, which suggests that the aperiodic-oscillation fluorescence spectrum is also a reliable approach to capture the refractive index of anisotropic optical films.

Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.