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Chen L, Zhang S, Duan Y, Song X, Chang M, Feng W, Chen Y. Silicon-containing nanomedicine and biomaterials: materials chemistry, multi-dimensional design, and biomedical application. Chem Soc Rev 2024; 53:1167-1315. [PMID: 38168612 DOI: 10.1039/d1cs01022k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
The invention of silica-based bioactive glass in the late 1960s has sparked significant interest in exploring a wide range of silicon-containing biomaterials from the macroscale to the nanoscale. Over the past few decades, these biomaterials have been extensively explored for their potential in diverse biomedical applications, considering their remarkable bioactivity, excellent biocompatibility, facile surface functionalization, controllable synthesis, etc. However, to expedite the clinical translation and the unexpected utilization of silicon-composed nanomedicine and biomaterials, it is highly desirable to achieve a thorough comprehension of their characteristics and biological effects from an overall perspective. In this review, we provide a comprehensive discussion on the state-of-the-art progress of silicon-composed biomaterials, including their classification, characteristics, fabrication methods, and versatile biomedical applications. Additionally, we highlight the multi-dimensional design of both pure and hybrid silicon-composed nanomedicine and biomaterials and their intrinsic biological effects and interactions with biological systems. Their extensive biomedical applications span from drug delivery and bioimaging to therapeutic interventions and regenerative medicine, showcasing the significance of their rational design and fabrication to meet specific requirements and optimize their theranostic performance. Additionally, we offer insights into the future prospects and potential challenges regarding silicon-composed nanomedicine and biomaterials. By shedding light on these exciting research advances, we aspire to foster further progress in the biomedical field and drive the development of innovative silicon-composed nanomedicine and biomaterials with transformative applications in biomedicine.
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Affiliation(s)
- Liang Chen
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
| | - Shanshan Zhang
- Department of Ultrasound Ruijin Hospital, Shanghai Jiaotong University School of Medicine, Shanghai 200025, P. R. China
| | - Yanqiu Duan
- Laboratory Center, Shanghai Municipal Hospital of Traditional Chinese Medicine, Shanghai University of Traditional Chinese Medicine, Shanghai, 200071, P. R. China.
| | - Xinran Song
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
| | - Meiqi Chang
- Laboratory Center, Shanghai Municipal Hospital of Traditional Chinese Medicine, Shanghai University of Traditional Chinese Medicine, Shanghai, 200071, P. R. China.
| | - Wei Feng
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
| | - Yu Chen
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
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Chang Y, Yates JR, Patrick CE. First-Principles Band Alignments at the Si:Anatase TiO 2 Interface. ACS OMEGA 2023; 8:20138-20147. [PMID: 37305305 PMCID: PMC10249118 DOI: 10.1021/acsomega.3c02865] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Accepted: 05/08/2023] [Indexed: 06/13/2023]
Abstract
TiO2 has been identified as a promising electron transport layer in Si solar cells. Experiments have revealed that the Si:TiO2 interface undergoes structural changes depending on how it was fabricated. However, less is understood about the sensitivity of electronic properties, such as band alignments, to these changes. Here, we present first-principles calculations of band alignments between Si and anatase TiO2, investigating different surface orientations and terminations. By calculating vacuum-level alignments, we observe a large band offset reduction of 2.5 eV for the O-terminated Si slab compared to other terminations. Furthermore, a 0.5 eV increase is found for the anatase (101) surface compared to (001). We compare the band offsets obtained through vacuum alignment with four different heterostructure models. Even though the heterostructure models contain an excess of oxygen, their offsets agree well with vacuum-level alignments using stoichiometric or H-terminated slabs, and the reduction in band offsets seen for the O-terminated Si slab is not observed. Additionally, we have investigated different exchange-correlation treatments including PBE + U, postprocessing GW corrections, and the meta-GGA rSCAN functional. We find that rSCAN provides more accurate band offsets than PBE, but further corrections are still required to achieve <0.5 eV accuracy. Overall, our study quantifies the importance of surface termination and orientation for this interface.
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Wei B, Tielens F, Calatayud M. Understanding the Role of Rutile TiO 2 Surface Orientation on Molecular Hydrogen Activation. NANOMATERIALS 2019; 9:nano9091199. [PMID: 31454939 PMCID: PMC6780095 DOI: 10.3390/nano9091199] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2019] [Revised: 08/10/2019] [Accepted: 08/16/2019] [Indexed: 11/30/2022]
Abstract
Titanium oxide (TiO2) has been widely used in many fields, such as photocatalysis, photovoltaics, catalysis, and sensors, where its interaction with molecular H2 with TiO2 surface plays an important role. However, the activation of hydrogen over rutile TiO2 surfaces has not been systematically studied regarding the surface termination dependence. In this work, we use density functional theory (PBE+U) to identify the pathways for two processes: the heterolytic dissociation of H2 as a hydride–proton pair, and the subsequent H transfer from Ti to near O accompanied by reduction of the Ti sites. Four stoichiometric surface orientations were considered: (001), (100), (110), and (101). The lowest activation barriers are found for hydrogen dissociation on (001) and (110), with energies of 0.56 eV and 0.50 eV, respectively. The highest activation barriers are found on (100) and (101), with energies of 1.08 eV and 0.79 eV, respectively. For hydrogen transfer from Ti to near O, the activation barriers are higher (from 1.40 to 1.86 eV). Our results indicate that the dissociation step is kinetically more favorable than the H transfer process, although the latter is thermodynamically more favorable. We discuss the implications in the stability of the hydride–proton pair, and provide structures, electronic structure, vibrational analysis, and temperature effects to characterize the reactivity of the four TiO2 orientations.
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Affiliation(s)
- Baohuan Wei
- Sorbonne Université, CNRS, Laboratoire de Chimie Théorique, LCT, F. 75005 Paris, France
| | - Frederik Tielens
- General Chemistry (ALGC), Materials Modelling Group, Vrije Universiteit Brussel (Free University Brussels-VUB), Pleinlaan 2, 1050 Brussel, Belgium
| | - Monica Calatayud
- Sorbonne Université, CNRS, Laboratoire de Chimie Théorique, LCT, F. 75005 Paris, France.
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Di Liberto G, Tosoni S, Pacchioni G. Role of Heterojunction in Charge Carrier Separation in Coexposed Anatase (001)-(101) Surfaces. J Phys Chem Lett 2019; 10:2372-2377. [PMID: 31018090 DOI: 10.1021/acs.jpclett.9b00504] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A heterojunction made by coexposed anatase (001)-(101) surfaces is studied using an explicit atomistic model of the interface via density functional theory. High photoactivity for this system has been demonstrated recently. Usually, the nature of a semiconductor heterojunction is evaluated by looking at band edges of the separate, noninteracting units, thus neglecting interfacial effects. Our results show non-negligible structural and electronic effects occurring at the junction, but because of the canceling nature of these effects, the alignment of the bands is qualitatively similar for the real interface and for the separated, noninteracting fragments. We also show from first principles that upon light absorption and electron excitation, the junction promotes charge carrier separation via localization of holes at O ions of the (001) side and electrons at Ti ions of the (101) side of the junction. This hinders recombination and is most likely the reason for high photoactivity.
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Affiliation(s)
- Giovanni Di Liberto
- Dipartimento di Scienza dei Materiali , Università degli Studi di Milano-Bicocca , Via Roberto Cozzi 55 , I-20125 Milano , Italy
| | - Sergio Tosoni
- Dipartimento di Scienza dei Materiali , Università degli Studi di Milano-Bicocca , Via Roberto Cozzi 55 , I-20125 Milano , Italy
| | - Gianfranco Pacchioni
- Dipartimento di Scienza dei Materiali , Università degli Studi di Milano-Bicocca , Via Roberto Cozzi 55 , I-20125 Milano , Italy
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Xu M, Zhong X, Lv J, Cui W, Shi J, Kanchana V, Vaitheeswaran G, Hao J, Wang Y, Li Y. Ti-fraction-induced electronic and magnetic transformations in titanium oxide films. J Chem Phys 2019; 150:154704. [PMID: 31005124 DOI: 10.1063/1.5089697] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Titanium dioxide has been widely used in modern industrial applications, especially as an effective photocatalyst. Recently, freestanding TiO2 films with a markedly reduced bandgap of ∼1.8 eV have been synthesized, indicating that the dimension has a considerable influence on the bulk band gap (>∼3 eV) and enhances the adsorption range of visible light. Titanium oxide compounds have various stoichiometries and versatile properties. Therefore, it is very necessary to explore the electronic properties and functionalities of other titanium oxide films with different stoichiometries. Here, we combined structure searches with first-principle calculations to explore candidate Ti-O films with different stoichiometries. In addition to the experimentally synthesized TiO2 film, the structure searches identified three new energetically and dynamically stable Ti-O films with stoichiometries of Ti3O5, Ti3O2, and Ti2O. Calculations show that the Ti-O films undergo several interesting electronic transformations as the Ti fraction increases, namely, from a wide-gap semiconductor (TiO2, 3.2 eV) to a narrow-gap semiconductor (Ti3O5, 1.80 eV) and then to metals (Ti3O2 and Ti2O) due to the abundance of unpaired Ti_d electrons. In addition to the electronic transformations, we observed nonmagnetic (TiO2) to ferromagnetic (Ti3O5, Ti3O2, and Ti2O) transformations. Notably, the Ti3O5 film possesses both narrow-gap semiconductive and ferromagnetic properties, with a large magnetic moment of 2.0 µB per unit cell; therefore, this film has high potential for use in applications such as spintronic devices. The results highlight metal fraction-induced electronic and magnetic transformations in transition metal oxide films and provide an alternative route for the design of new, functional thin-film materials.
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Affiliation(s)
- Meiling Xu
- Laboratory of Quantum Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
| | - Xin Zhong
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
| | - Jian Lv
- State Key Lab of Superhard Materials & Innovation Center of Computational Physics Methods and Software, College of Physics, Jilin University, Changchun 130012, China
| | - Wenwen Cui
- Laboratory of Quantum Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
| | - Jingming Shi
- Laboratory of Quantum Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
| | - V Kanchana
- Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502285, Telengana, India
| | - G Vaitheeswaran
- School of Physics, University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500046, Telengana, India
| | - Jian Hao
- Laboratory of Quantum Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
| | - Yanchao Wang
- State Key Lab of Superhard Materials & Innovation Center of Computational Physics Methods and Software, College of Physics, Jilin University, Changchun 130012, China
| | - Yinwei Li
- Laboratory of Quantum Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
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