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Shah UA, Wang A, Irfan Ullah M, Ishaq M, Shah IA, Zeng Y, Abbasi MS, Umair MA, Farooq U, Liang GX, Sun K. A Deep Dive into Cu 2ZnSnS 4 (CZTS) Solar Cells: A Review of Exploring Roadblocks, Breakthroughs, and Shaping the Future. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310584. [PMID: 38470191 DOI: 10.1002/smll.202310584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Revised: 02/20/2024] [Indexed: 03/13/2024]
Abstract
Renewable energy is crucial for sustainable future, and Cu2ZnSnS4 (CZTS) based solar cells shine as a beacon of hope. CZTS, composed of abundant, low-cost, and non-toxic elements, shares similarities with Cu(In,Ga)Se2 (CIGS). However, despite its promise and appealing properties for solar cells, CZTS-based solar cells faces performance challenges owing to inherent issues with CZTS material, and conventional substrate structure complexities. This review critically examines these roadblocks, explores ongoing efforts and breakthroughs, providing insight into the evolving landscape of CZTS-based solar cells research. Furthermore, as an optimistic turn in the field, the review first highlights the crucial need to transition to a superstrate structure for CZTS-based single junction devices, and summarizes the substantial progress made in this direction. Subsequently, dive into the discussion about the fascinating realm of CZTS-based tandem devices, providing an overview of the existing literature as well as outlining the possible potential strategies for enhancing the efficiency of such devices. Finally, the review provides a useful outlook that outlines the priorities for future research and suggesting where efforts should concentrate to shape the future of CZTS-based solar cells.
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Affiliation(s)
- Usman Ali Shah
- Department of Physics and Astronomy, University of Florence, via Giovanni Sansone 1, Sesto Fiorentino, FI, 50019, Italy
| | - Ao Wang
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Muhammad Irfan Ullah
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Muhammad Ishaq
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, P.R. China
| | - Imtiaz Alam Shah
- Department of Mechanical Engineering, International Islamic University, Islamabad, 04436, Pakistan
| | - Yiyu Zeng
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Misbah Sehar Abbasi
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P.R. China
| | - Muhammad Ali Umair
- European Laboratory for Nonlinear Spectroscopy (LENS), University of Florence, via Nello Carrara, 1, Sesto Fiorentino, FI, I-50019, Italy
| | - Umar Farooq
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China
| | - Guang-Xing Liang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, P.R. China
| | - Kaiwen Sun
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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Maji K, Raveau B, Lemoine P, Boullay P, Acharyya P, Shen X, Renaud A, Pelletier V, Gautier R, Carnevali V, Fornari M, Zhang B, Zhou X, Lenoir B, Candolfi C, Guilmeau E. Three-Fold Coordination of Copper in Sulfides: A Blockade for Hole Carrier Delocalization but a Driving Force for Ultralow Thermal Conductivity. J Am Chem Soc 2024; 146:9741-9754. [PMID: 38551288 DOI: 10.1021/jacs.3c13884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Copper-rich sulfides are very promising for energy conversion applications due to their environmental compatibility, cost effectiveness, and earth abundance. Based on a comparative analysis of the structural and transport properties of Cu3BiS3 with those of tetrahedrite (Cu12Sb4S13) and other Cu-rich sulfides, we highlight the role of the cationic coordination types and networks on the electrical and thermal properties. By precession-assisted 3D electron diffraction analysis, we find very high anisotropic thermal vibration of copper attributed to its 3-fold coordination, with an anisotropic atomic displacement parameter up to 0.09 Å2. Density functional theory calculations reveal that these Cu atoms are weakly bonded and give rise to low-energy Einstein-like vibrational modes that strongly scatter heat-carrying acoustic phonons, leading to ultralow thermal conductivity. Importantly, we demonstrate that the 3-fold coordination of copper in Cu3BiS3 and in other copper-rich sulfides constituted of interconnected CuS3 networks causes a hole blockade. This phenomenon hinders the possibility of optimizing the carrier concentration and electronic properties through mixed valency Cu+/Cu2+, differently from tetrahedrite and most other copper-rich chalcogenides, where the main interconnected Cu-S network is built of CuS4 tetrahedra. The comparison with various copper-rich sulfides demonstrates that seeking for frameworks characterized by the coexistence of tetrahedral and 3-fold coordinated copper is very attractive for the discovery of efficient thermoelectric copper-rich sulfides. Considering that lattice vibrations and carrier concentration are key factors for engineering transport phenomena (electronic, phonon, ionic, etc.) in copper-rich chalcogenides for various types of applications, our findings improve the guidelines for the design of materials enabling sustainable energy solutions with wide-ranging applications.
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Affiliation(s)
- Krishnendu Maji
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Bernard Raveau
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Pierric Lemoine
- Institut Jean Lamour, UMR 7198 CNRS - Université de Lorraine, 54011 Nancy, France
| | - Philippe Boullay
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Paribesh Acharyya
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Xingchen Shen
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Adèle Renaud
- Université Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR-UMR 6226, F-35000 Rennes, France
| | - Vincent Pelletier
- Université Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR-UMR 6226, F-35000 Rennes, France
| | - Régis Gautier
- Université Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR-UMR 6226, F-35000 Rennes, France
| | - Virginia Carnevali
- Department of Physics and Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, Michigan 48859, United States
| | - Marco Fornari
- Department of Physics and Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, Michigan 48859, United States
| | - Bin Zhang
- College of Physics and Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing 401331, China
- Analytical and Testing Center of Chongqing University, Chongqing 401331, China
| | - Xiaoyuan Zhou
- College of Physics and Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing 401331, China
- Analytical and Testing Center of Chongqing University, Chongqing 401331, China
| | - Bertrand Lenoir
- Institut Jean Lamour, UMR 7198 CNRS - Université de Lorraine, 54011 Nancy, France
| | - Christophe Candolfi
- Institut Jean Lamour, UMR 7198 CNRS - Université de Lorraine, 54011 Nancy, France
| | - Emmanuel Guilmeau
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
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3
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Tseberlidis G, Di Palma V, Trifiletti V, Frioni L, Valentini M, Malerba C, Mittiga A, Acciarri M, Binetti SO. Titania as Buffer Layer for Cd-Free Kesterite Solar Cells. ACS MATERIALS LETTERS 2023; 5:219-224. [PMID: 36820000 PMCID: PMC9937559 DOI: 10.1021/acsmaterialslett.2c00933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Accepted: 12/15/2022] [Indexed: 06/18/2023]
Abstract
Pure sulfide kesterite (Cu2ZnSnS4) is one of the most promising emerging photovoltaic technologies thanks to its excellent absorption coefficient, cost-effectiveness, and environmental sustainability. However, record efficiencies are not exceeding 11% due to several issues, such as absorber defects or a nonoptimal band alignment with the toxic but conventionally used CdS buffer layer. To get rid of it, several efforts have been made in the past few years. Among recent theoretical works, TiO2 has been suggested as a suitable buffer layer due to its optical and electrical properties, giving extremely promising results in device simulation. However, there are few experimental examples combining TiO2 with kesterite, and they generally show very modest performances. In this Letter, we report on the preliminary and promising results of our experimental procedure for the production of Cd-free kesterite photovoltaic devices featuring ALD-TiO2 as a buffer layer, leading to efficiencies comparable with our CZTS/CdS reference devices.
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Affiliation(s)
- Giorgio Tseberlidis
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125, Milano, Italy
| | - Valerio Di Palma
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125, Milano, Italy
| | - Vanira Trifiletti
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125, Milano, Italy
| | - Luigi Frioni
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125, Milano, Italy
| | | | - Claudia Malerba
- ENEA
C.R. CASACCIA, Via Anguillarese 301, 00123, Roma, Italy
| | - Alberto Mittiga
- ENEA
C.R. CASACCIA, Via Anguillarese 301, 00123, Roma, Italy
| | - Maurizio Acciarri
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125, Milano, Italy
| | - Simona O. Binetti
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125, Milano, Italy
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Zhao B, Deng Y, Cao L, Zhu J, Zhou Z. Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells. Front Chem 2022; 10:974761. [PMID: 36017168 PMCID: PMC9395640 DOI: 10.3389/fchem.2022.974761] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 07/12/2022] [Indexed: 11/13/2022] Open
Abstract
Kesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaics have attracted considerable attention in recent years because of its low-cost and eco-friendly raw material, as well as high theoretical conversion efficiency. However, its photovoltaic performance is hindered by large open-circuit voltage (VOC) deficiency due to the presence of intrinsic defects and defect clusters in the bulk of CZTSSe absorber films. The doping of extrinsic cation to the CZTSSe matrix was adopted as an effective strategy to ameliorate defect properties of the solar cell absorbers. Herein, a novel Se&Sb2Se3 co-selenization process was employed to introduce Sb into CZTSSe crystal lattice. The results reveal that Sb-doping plays an active role in the crystallization and grain growth of CZTSSe absorber layer. More importantly, one of the most seriously detrimental SnZn deep defect is effectively passivated, resulting in significantly reduced deep-level traps and band-tail states compared to Sb free devices. As a result, the power conversion efficiency of CZTSSe solar cell is increased significantly from 9.17% to 11.75%, with a VOC especially enlarged to 505 mV from 449 mV. This insight provides a deeper understanding for engineering the harmful Sn-related deep defects for future high-efficiency CZTSSe photovoltaic devices.
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Affiliation(s)
- Benhui Zhao
- Miami College of Henan University, Kaifeng, China
| | - Yueqing Deng
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng, China
| | - Lei Cao
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng, China
| | - Jichun Zhu
- Miami College of Henan University, Kaifeng, China
- *Correspondence: Jichun Zhu, ; Zhengji Zhou,
| | - Zhengji Zhou
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng, China
- *Correspondence: Jichun Zhu, ; Zhengji Zhou,
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Tseberlidis G, Trifiletti V, Vitiello E, Husien AH, Frioni L, Da Lisca M, Alvarez J, Acciarri M, Binetti SO. Band-Gap Tuning Induced by Germanium Introduction in Solution-Processed Kesterite Thin Films. ACS OMEGA 2022; 7:23445-23456. [PMID: 35847257 PMCID: PMC9280774 DOI: 10.1021/acsomega.2c01786] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In the last few decades, the attention of scientific community has been driven toward the research on renewable energies. In particular, the photovoltaic (PV) thin-film technology has been widely explored to provide suitable candidates as top cells for tandem architectures, with the purpose of enhancing current PV efficiencies. One of the most studied absorbers, made of earth-abundant elements, is kesterite Cu2ZnSnS4 (CZTS), showing a high absorption coefficient and a band gap around 1.4-1.5 eV. In particular, thanks to the ease of band-gap tuning by partial/total substitution of one or more of its elements, the high-band-gap kesterite derivatives have drawn a lot of attention aiming to find the perfect partner as a top absorber to couple with silicon in tandem solar cells (especially in a four-terminal architecture). In this work, we report the effects of the substitution of tin with different amounts of germanium in CZTS-based solar cells produced with an extremely simple sol-gel process, demonstrating how it is possible to fine-tune the band gap of the absorber and change its chemical-physical properties in this way. The precursor solution was directly drop-cast onto the substrate and spread with the aid of a film applicator, followed by a few minutes of gelation and annealing in an inert atmosphere. The desired crystalline phase was obtained without the aid of external sulfur sources as the precursor solution contained thiourea as well as metal acetates responsible for the in situ coordination and thus the correct networking of the metal centers. The addition of KCl in dopant amounts to the precursor solution allowed the formation of well-grown compact grains and enhanced the material quality. The materials obtained with the optimized procedure were characterized in depth through different techniques, and they showed very good properties in terms of purity, compactness, and grain size. Moreover, solar-cell prototypes were produced and measured, exhibiting poor charge extraction due to heavy back-contact sulfurization as studied in depth and experimentally demonstrated through Kelvin probe force microscopy.
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Affiliation(s)
- Giorgio Tseberlidis
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milano, Italy
| | - Vanira Trifiletti
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milano, Italy
| | - Elisa Vitiello
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milano, Italy
| | - Amin Hasan Husien
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milano, Italy
| | - Luigi Frioni
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milano, Italy
| | - Mattia Da Lisca
- Institut
Photovoltaïque d’Ile de France, 30 Route Départementale 128, 91120 Palaiseau, France
- Université
Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie
Electrique et Electronique de Paris, 91192 Gif-sur-Yvette, France
- Sorbonne
Université CNRS, Laboratoire de Génie Electrique et
Electronique de Paris, 75252 Paris, France
| | - José Alvarez
- Institut
Photovoltaïque d’Ile de France, 30 Route Départementale 128, 91120 Palaiseau, France
- Université
Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie
Electrique et Electronique de Paris, 91192 Gif-sur-Yvette, France
- Sorbonne
Université CNRS, Laboratoire de Génie Electrique et
Electronique de Paris, 75252 Paris, France
| | - Maurizio Acciarri
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milano, Italy
| | - Simona O. Binetti
- Department
of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milano, Italy
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Akram R, Akhtar J, Khan HR, Akhtar M, Malik MA, Revaprasdu N, AlGhamdi Y, Bhatti MH. Synthesis of nanostructures of binary/ternary phase iron sulfide/selenide by hot injection route and their application as photocatalysts for degradation of red S3B dye. CHEMICAL PAPERS 2022. [DOI: 10.1007/s11696-022-02280-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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McKeown Wessler GC, Wang T, Blum V, Mitzi DB. Cubic Crystal Structure Formation and Optical Properties within the Ag-B II-M IV-X (B II = Sr, Pb; M IV = Si, Ge, Sn; X = S, Se) Family of Semiconductors. Inorg Chem 2022; 61:2929-2944. [PMID: 35107292 DOI: 10.1021/acs.inorgchem.1c03805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Quaternary chalcogenide semiconductors are promising materials for energy conversion and nonlinear optical applications, with properties tunable primarily by varying the elemental composition and crystal structure. Here, we first analyze the connections among several cubic crystal structure types, as well as the orthorhombic Ag2PbGeS4-type structure, reported for select members within the Ag-BII-MIV-X (BII = Sr, Pb; MIV = Si, Ge, Sn; X = S, Se) compositional space. Focusing on the Ag-Pb-Si-S and Ag-Sr-Sn-S systems, we show that one structure type, with the formulas Ag2Pb3Si2S8 and Ag2Sr3Sn2S8, is favored. We have prepared powder and single-crystal samples of Ag2Pb3Si2S8 and Ag2Sr3Sn2S8, showing that each takes on the noncentrosymmetric cubic space group I4̅3d and is isostructural to the previously reported compound Ag2Sr3Ge2Se8. Through hybrid density functional theory calculations, these cubic compounds are demonstrated to be (quasi-)direct band gap semiconductors with high densities of states at the band maxima. The band-gap energies are measured by reflectance spectroscopy as 1.95(3) and 2.66(4) eV for Ag2Pb3Si2S8 and Ag2Sr3Sn2S8, respectively. We further measure the optical properties and show the electronic band structures of three other isostructural AI-BII-MIV-X-type materials, i.e., Ag2Sr3Si2S8, Ag2Sr3Ge2S8, and Ag2Sr3Ge2Se8, showing that the band gaps can be predictably tuned by element substitution. Detailed visual analyses of the different structures and of their relationships with other members of the Ag-BII-MIV-X compositional family provide a basis for a broader understanding of the structure formation and optoelectronic properties within the quaternary chalcogenide semiconductor family.
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Lemoine P, Guélou G, Raveau B, Guilmeau E. Crystal Structure Classification of Copper‐Based Sulfides as a Tool for the Design of Inorganic Functional Materials. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202108686] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
| | - Gabin Guélou
- CRISMAT ENSICAEN UNICAEN Normandie Univ CNRS 14000 Caen France
| | - Bernard Raveau
- CRISMAT ENSICAEN UNICAEN Normandie Univ CNRS 14000 Caen France
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9
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Zi Y, Zhu J, Hu L, Wang M, Huang W. Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100098] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022] Open
Affiliation(s)
- You Zi
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Jun Zhu
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Lanping Hu
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
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McKeown Wessler GC, Wang T, Sun JP, Liao Y, Fischer MC, Blum V, Mitzi DB. Structural, Optical, and Electronic Properties of Two Quaternary Chalcogenide Semiconductors: Ag 2SrSiS 4 and Ag 2SrGeS 4. Inorg Chem 2021; 60:12206-12217. [PMID: 34319109 DOI: 10.1021/acs.inorgchem.1c01416] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Quaternary chalcogenide materials have long been a source of semiconductors for optoelectronic applications. Recent studies on I2-II-IV-X4 (I = Ag, Cu, Li; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) materials have shown particular versatility and promise among these compounds. These semiconductors take advantage of a diverse bonding scheme and chemical differences among cations to target a degree of antisite defect resistance. Within this set of compounds, the materials containing both Ag and Sr have not been experimentally studied and leave a gap in the full understanding of the family. Here, we have synthesized powders and single crystals of two Ag- and Sr-containing compounds, Ag2SrSiS4 and Ag2SrGeS4, each found to form in the tetragonal I4̅2m structure of Ag2BaGeS4. During the synthesis targeting the title compounds, two additional materials, Ag2Sr3Si2S8 and Ag2Sr3Ge2S8, have also been identified. These cubic compounds represent impurity phases during the synthesis of Ag2SrSiS4 and Ag2SrGeS4. We show through hybrid density functional theory calculations that Ag2SrSiS4 and Ag2SrGeS4 have highly dispersive band-edge states and indirect band gaps, experimentally measured as 2.08(1) and 1.73(2) eV, respectively. Second-harmonic generation measurements on Ag2SrSiS4 and Ag2SrGeS4 powders show frequency-doubling capabilities in the near-infrared range.
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11
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Lemoine P, Guélou G, Raveau B, Guilmeau E. Crystal structure classification of copper-based sulphides as a tool for the design of inorganic functional materials. Angew Chem Int Ed Engl 2021; 61:e202108686. [PMID: 34374191 DOI: 10.1002/anie.202108686] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Revised: 07/30/2021] [Indexed: 11/06/2022]
Abstract
Research focusing on the interplay between structural features and transport properties in inorganic materials is of paramount importance for the identification, comprehension and optimisation of functional materials. In this respect, Earth-abundant copper sulphides have been receiving considerable attention from scientists as the urgency remains to discover and improve the efficiency of sustainable materials for energy applications. This proposed classification of copper sulphides, associated with block p and/or d elements, is based on their crystallographic features and the analysis of their transport properties. It provides guidelines to help estimating some properties of new materials (type of main charge carriers, thermal conductivity, transport mechanisms, etc.) by considering only their chemical composition and crystal structure. The classification relies essentially on recent work in the fields of thermoelectricity and photovoltaics and thorough crystal structure investigations.
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Affiliation(s)
- Pierric Lemoine
- ISCR: Institut des Sciences Chimiques de Rennes, CSM, FRANCE
| | - Gabin Guélou
- CRISMAT: Laboratoire de cristallographie et sciences des materiaux, CRISMAT, FRANCE
| | - Bernard Raveau
- CRISMAT: Laboratoire de cristallographie et sciences des materiaux, CRISMAT, FRANCE
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12
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Waluś E, Manecki M, Cios G, Tokarski T. Effect of a Sulfur Precursor on the Hydrothermal Synthesis of Cu 2MnSnS 4. MATERIALS (BASEL, SWITZERLAND) 2021; 14:3457. [PMID: 34206338 PMCID: PMC8269488 DOI: 10.3390/ma14133457] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/22/2021] [Revised: 06/16/2021] [Accepted: 06/19/2021] [Indexed: 11/17/2022]
Abstract
Cu2MnSnS4 (CMTS) is acknowledged as an alternative to traditional semiconductors. The structure and microstructure of synthetic CMTS depend on, among other things, the types of sulfur sources used. Traditionally obtained CMTS mostly has a tetragonal structure. In this study, the effect of using thiourea (Tu) or Na2S as a sulfur source on the product structure was compared using hydrothermal synthesis at 190 °C for 7 days (ethylene glycol with water in the presence of poly(vinylpyrollidone) was used as a solvent). When Tu was used, CMTS precipitated in the form of concentric microspheres, 1-1.5 µm in size, consisting of hexagonal (in the cores) and tetragonal (the rims) forms. Most probably, the rapidly formed hexagonal nucleus was later surrounded by a slower-forming rim with a tetragonal structure. In contrast, when Na2S was used as a precursor, microspheres were not formed and a fine crystalline material with a homogeneous tetragonal structure was obtained. This allowed for the choice of micromorphology and product structure during synthesis.
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Affiliation(s)
- Edyta Waluś
- Department of Mineralogy, Petrography, and Geochemistry, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland;
| | - Maciej Manecki
- Department of Mineralogy, Petrography, and Geochemistry, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland;
- Department of Earth Sciences, Uppsala University, Villavägen 16, SE-752 36 Uppsala, Sweden
| | - Grzegorz Cios
- Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland; (G.C.); (T.T.)
| | - Tomasz Tokarski
- Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland; (G.C.); (T.T.)
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13
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Mihai C, Sava F, Simandan ID, Galca AC, Burducea I, Becherescu N, Velea A. Structural and optical properties of amorphous Si-Ge-Te thin films prepared by combinatorial sputtering. Sci Rep 2021; 11:11755. [PMID: 34083613 PMCID: PMC8175571 DOI: 10.1038/s41598-021-91138-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2020] [Accepted: 05/21/2021] [Indexed: 11/29/2022] Open
Abstract
The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical sensors and Ovonic threshold switches. But an extended exploration of this system is still missing. In this study, magnetron co-sputtering is used for the combinatorial synthesis of thin film libraries, outside the glass formation domain. Compositional, structural and optical properties are investigated and discussed in the framework of topological constraint theory. The materials in the library are classified as stressed-rigid amorphous networks. The bandgap is heavily influenced by the Te content while the near-IR refractive index dependence on Ge concentration shows a minimum, which could be exploited in applications. A transition from a disordered to a more ordered amorphous network at 60 at% Te, is observed. The thermal stability study shows that the formed crystalline phases are dictated by the concentration of Ge and Te. New amorphous compositions in the Si–Ge–Te system were found and their properties explored, thus enabling an informed and rapid material selection and design for applications.
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Affiliation(s)
- C Mihai
- National Institute of Materials Physics, 077125, Magurele, Romania
| | - F Sava
- National Institute of Materials Physics, 077125, Magurele, Romania
| | - I D Simandan
- National Institute of Materials Physics, 077125, Magurele, Romania
| | - A C Galca
- National Institute of Materials Physics, 077125, Magurele, Romania
| | - I Burducea
- Horia Hulubei National Institute of Physics and Nuclear Engineering, 077125, Magurele, Romania
| | - N Becherescu
- Apel Laser Ltd., Vanatorilor 25, 077135, Mogosoaia, Romania
| | - A Velea
- National Institute of Materials Physics, 077125, Magurele, Romania.
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14
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Palchoudhury S, Ramasamy K, Gupta A. Multinary copper-based chalcogenide nanocrystal systems from the perspective of device applications. NANOSCALE ADVANCES 2020; 2:3069-3082. [PMID: 36134292 PMCID: PMC9418475 DOI: 10.1039/d0na00399a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2020] [Accepted: 06/18/2020] [Indexed: 05/17/2023]
Abstract
Multinary chalcogenide semiconductor nanocrystals are a unique class of materials as they offer flexibility in composition, structure, and morphology for controlled band gap and optical properties. They offer a vast selection of materials for energy conversion, storage, and harvesting applications. Among the multinary chalcogenides, Cu-based compounds are the most attractive in terms of sustainability as many of them consist of earth-abundant elements. There has been immense progress in the field of Cu-based chalcogenides for device applications in the recent years. This paper reviews the state of the art synthetic strategies and application of multinary Cu-chalcogenide nanocrystals in photovoltaics, photocatalysis, light emitting diodes, supercapacitors, and luminescent solar concentrators. This includes the synthesis of ternary, quaternary, and quinary Cu-chalcogenide nanocrystals. The review also highlights some emerging experimental and computational characterization approaches for multinary Cu-chalcogenide semiconductor nanocrystals. It discusses the use of different multinary Cu-chalcogenide compounds, achievements in device performance, and the recent progress made with multinary Cu-chalcogenide nanocrystals in various energy conversion and energy storage devices. The review concludes with an outlook on some emerging and future device applications for multinary Cu-chalcogenides, such as scalable luminescent solar concentrators and wearable biomedical electronics.
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Affiliation(s)
| | | | - Arunava Gupta
- Department of Chemistry and Biochemistry, The University of Alabama AL USA
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15
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Trifiletti V, Tseberlidis G, Colombo M, Spinardi A, Luong S, Danilson M, Grossberg M, Fenwick O, Binetti S. Growth and Characterization of Cu 2Zn 1-xFe xSnS 4 Thin Films for Photovoltaic Applications. MATERIALS 2020; 13:ma13061471. [PMID: 32213828 PMCID: PMC7143291 DOI: 10.3390/ma13061471] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/17/2020] [Revised: 03/15/2020] [Accepted: 03/20/2020] [Indexed: 11/16/2022]
Abstract
Photovoltaics is a promising technology to produce sustainable energy, thanks to the high amount of energy emitted by the sun. One way of having solar cells with low production costs is to apply thin-film technology and with earth-abundant raw materials. A keen interest is arising in kesterite compounds, which are chalcogenides composed of abundant and non-toxic elements. They have already achieved excellent performance at the laboratory level. Here, we report the synthesis and characterization of mixed chalcogenides based on copper, zinc, iron, and tin. Solutions have been studied with different zinc and iron ratios. The distortion of the elementary cell of kesterite increases with the addition of iron until a phase transition to stannite occurs. The process of synthesis and deposition proposed herein is cheap and straightforward, based on the sol-gel technique. These thin films are particularly attractive for use in cheap and easily processable solar cells. The synthesized layers have been characterized by X-ray diffraction, UV-Vis absorption, and Raman, X-ray photoelectron, and energy-dispersive X-ray spectroscopy measurements.
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Affiliation(s)
- Vanira Trifiletti
- School of Engineering and Materials Science, Queen Mary University of London, 327 Mile End Road, London E1 4NS, UK; (V.T.); (S.L.); (O.F.)
- Department of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy; (G.T.); (M.C.); (A.S.)
| | - Giorgio Tseberlidis
- Department of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy; (G.T.); (M.C.); (A.S.)
| | - Marco Colombo
- Department of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy; (G.T.); (M.C.); (A.S.)
| | - Alberto Spinardi
- Department of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy; (G.T.); (M.C.); (A.S.)
| | - Sally Luong
- School of Engineering and Materials Science, Queen Mary University of London, 327 Mile End Road, London E1 4NS, UK; (V.T.); (S.L.); (O.F.)
| | - Mati Danilson
- Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate Tee 5, 19086 Tallinn, Estonia; (M.D.); (M.G.)
| | - Maarja Grossberg
- Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate Tee 5, 19086 Tallinn, Estonia; (M.D.); (M.G.)
| | - Oliver Fenwick
- School of Engineering and Materials Science, Queen Mary University of London, 327 Mile End Road, London E1 4NS, UK; (V.T.); (S.L.); (O.F.)
| | - Simona Binetti
- Department of Materials Science and Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy; (G.T.); (M.C.); (A.S.)
- Correspondence:
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Abstract
Amid present concerns over a potential scarcity of critical elements and raw materials that are essential for modern technology, including those for low-carbon energy production, a survey of the present situation, and how it may unfold both in the immediate and the longer term, appears warranted. For elements such as indium, current recycling rates are woefully low, and although a far more effective recycling programme is necessary for most materials, it is likely that a full-scale inauguration of a global renewable energy system will require substitution of many scarcer elements by more Earth-abundant material alternatives. Currently, however, it is fossil fuels that are needed to process them, and many putative Earth-abundant material technologies are insufficiently close to the level of commercial viability required to begin to supplant their fossil fuel equivalents "necessarily rapidly and at scale". As part of a significant expansion of renewable energy production, it will be necessary to recycle elements from wind turbines and solar panels (especially thin-film cells). The interconnected nature of particular materials, for example, cadmium, gallium, germanium, indium and tellurium, all mainly being recovered from the production of zinc, aluminium and copper, and helium from natural gas, means that the availability of such 'hitchhiker' elements is a function of the reserve size and production rate of the primary (or 'attractor') material. Even for those elements that are relatively abundant on Earth, limitations in their production rates/supply may well be experienced on a timescale of decades, and so a more efficient (reduced) use of them, coupled with effective collection and recycling strategies, should be embarked upon urgently.
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