Huang Z, Ren K, Zheng R, Wang L, Wang L. Ultrahigh Carrier Mobility in Two-Dimensional IV-VI Semiconductors for Photocatalytic Water Splitting.
Molecules 2023;
28:molecules28104126. [PMID:
37241866 DOI:
10.3390/molecules28104126]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Revised: 05/10/2023] [Accepted: 05/14/2023] [Indexed: 05/28/2023] Open
Abstract
Two-dimensional materials have been developed as novel photovoltaic and photocatalytic devices because of their excellent properties. In this work, four δ-IV-VI monolayers, GeS, GeSe, SiS and SiSe, are investigated as semiconductors with desirable bandgaps using the first-principles method. These δ-IV-VI monolayers exhibit exceptional toughness; in particular, the yield strength of the GeSe monolayer has no obvious deterioration at 30% strain. Interestingly, the GeSe monolayer also possesses ultrahigh electron mobility along the x direction of approximately 32,507 cm2·V-1·s-1, which is much higher than that of the other δ-IV-VI monolayers. Moreover, the calculated capacity for hydrogen evolution reaction of these δ-IV-VI monolayers further implies their potential for applications in photovoltaic and nano-devices.
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