Engineering Spiking Neurons Using Threshold Switching Devices for High-Efficient Neuromorphic Computing

Low-energy and tunable LIF neuron using SiGe bandgap-engineered resistive switching transistor

We have proposed leaky integrate-and-fire (LIF) neuron having low-energy consumption and tunable functionality without external circuit components. Our LIF neuron has a simple configuration consisting of only three components: one bandgap-engineered resistive switching transistor (BE-RST), one capacitor, and one resistor. Here, the crucial point is that BE-RST with a silicon-germanium heterojunction possesses an amplified hysteric current switching with a low latch-up voltage due to improved hole storage capability and impact ionization coefficient. Therefore, the proposed neuron utilizing BE-RST requires an energy consumption of 0.36 pJ/spike, which is approximately six times lower than 2.08 pJ/spike of pure silicon-RST based neuron. In addition, the spiking properties can be tuned by modulating the leakage rate and threshold through gate bias, which contributes to energy-efficient sparse-activity and high learning accuracy. As a result, our proposed neuron can be a promising candidate for executing various spiking neural network applications.

Low Power Volatile and Nonvolatile Memristive Devices from 1D MoO2-MoS2 Core-Shell Heterostructures for Future Bio-Inspired Computing

Memristors-based integrated circuits for emerging bio-inspired computing paradigms require an integrated approach utilizing both volatile and nonvolatile memristive devices. Here, an innovative architecture comprising of 1D CVD-grown core-shell heterostructures (CSHSs) of MoO2-MoS2 is employed as memristors manifesting both volatile switching (with high selectivity of 107 and steep slope of 0.6 mV decade-1) and nonvolatile switching phenomena (with Ion/Ioff ≈103 and switching speed of 60 ns). In these CSHSs, the metallic core MoO2 with high current carrying capacity provides a conformal and immaculate interface with semiconducting MoS2 shells and therefore it acts as a bottom electrode for the memristors. The power consumption in volatile devices is as low as 50 pW per set transition and 0.1 fW in standby mode. Voltage-driven current spikes are observed for volatile devices while with nonvolatile memristors, key features of a biological synapse such as short/long-term plasticity and paired pulse facilitation are emulated suggesting their potential for the development of neuromorphic circuits. These CSHSs offer an unprecedented solution for the interfacial issues between metallic electrodes and the layered materials-based switching element with the prospects of developing smaller footprint memristive devices for future integrated circuits.

Mott memristor based stochastic neurons for probabilistic computing

Many studies suggest that probabilistic spiking in biological neural systems is beneficial as it aids learning and provides Bayesian inference-like dynamics. If appropriately utilised, noise and stochasticity in nanoscale devices can benefit neuromorphic systems. In this paper, we build a stochastic leaky integrate and fire (LIF) neuron, utilising a Mott memristor's inherent stochastic switching dynamics. We demonstrate that the developed LIF neuron is capable of biological neural dynamics. We leverage these characteristics of the proposed LIF neuron by integrating it into a population-coded spiking neural network and a spiking restricted Boltzmann machine (sRBM), thereby showcasing its ability to implement probabilistic learning and inference. The sRBM achieves a software-comparable accuracy of 87.13%. Unlike CMOS-based probabilistic neurons, our design does not require any external noise sources. The designed neurons are highly energy efficient and ultra-compact, requiring only three components: a resistor, a capacitor and a memristor device.

A bioinspired configurable cochlea based on memristors

Cochleas are the basis for biology to process and recognize speech information, emulating which with electronic devices helps us construct high-efficient intelligent voice systems. Memristor provides novel physics for performing neuromorphic engineering beyond complementary metal-oxide-semiconductor technology. This work presents an artificial cochlea based on the shallen-key filter model configured with memristors, in which one filter emulates one channel. We first fabricate a memristor with the TiN/HfOx/TaOx/TiN structure to implement such a cochlea and demonstrate the non-volatile multilevel states through electrical operations. Then, we build the shallen-key filter circuit and experimentally demonstrate the frequency-selection function of cochlea’s five channels, whose central frequency is determined by the memristor’s resistance. To further demonstrate the feasibility of the cochlea for system applications, we use it to extract the speech signal features and then combine it with a convolutional neural network to recognize the Free Spoken Digit Dataset. The recognition accuracy reaches 92% with 64 channels, compatible with the traditional 64 Fourier transform transformation points of mel-frequency cepstral coefficients method with 95% recognition accuracy. This work provides a novel strategy for building cochleas, which has a great potential to conduct configurable, high-parallel, and high-efficient auditory systems for neuromorphic robots.