CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Simulations of Infrared Reflectivity and Transmission Phonon Spectra for Undoped and Doped GeC/Si (001)

Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoelectronic, gas-sensing, and photovoltaic applications. Historically, the effects of phonons on materials were considered to be a hindrance. However, modern research has confirmed that the coupling of phonons in solids initiates excitations, causing several impacts on their thermal, dielectric, and electronic properties. These studies have motivated many scientists to design low-dimensional heterostructures and investigate their lattice dynamical properties. Proper simulation/characterization of phonons in XC materials and ultrathin epilayers has been challenging. Achieving the high crystalline quality of heteroepitaxial multilayer films on different substrates with flat surfaces, intra-wafer, and wafer-to-wafer uniformity is not only inspiring but crucial for their use as functional components to boost the performance of different nano-optoelectronic devices. Despite many efforts in growing strained zinc-blende (zb) GeC/Si (001) epifilms, no IR measurements exist to monitor the effects of surface roughness on spectral interference fringes. Here, we emphasize the importance of infrared reflectivity Rω and transmission Tω spectroscopy at near normal θi = 0 and oblique θi ≠ 0 incidence (Berreman effect) for comprehending the phonon characteristics of both undoped and doped GeC/Si (001) epilayers. Methodical simulations of Rω and Tω revealing atypical fringe contrasts in ultrathin GeC/Si are linked to the conducting transition layer and/or surface roughness. This research provided strong perspectives that the Berreman effect can complement Raman scattering spectroscopy for allowing the identification of longitudinal optical ωLO phonons, transverse optical ωTO phonons, and LO-phonon-plasmon coupled ωLPP+ modes, respectively.

Design of integrated silicon waveguides for Raman-enhanced four-wave mixing in the telecom band

Silicon planar waveguides are designed to maximize the wavelength conversion efficiency via the use of Raman-enhanced four-wave mixing in the telecom band. By investigating the dispersion properties of various rib waveguide structures, the optimum etch depth and width are selected to obtain efficient phase-matching for a continuous-wave pump at 1545 nm. The design benefits from good fabrication tolerance in the structural parameters, which are well within the precision of standard lithography and etching processes. Using the optimized waveguides, simulations show that it is possible to reach conversion efficiencies as high as ∼45 dB for waveguide lengths as short as 4.6 cm, with a pump power of only 130 mW. This enhancement in the conversion efficiency is about 50 dB higher than conventional values for FWM in integrated silicon photonic systems, highlighting the benefits of exploiting the coupling between the two nonlinear processes.

Using electrical resistance asymmetries to infer the geometric shapes of foundry patterned nanophotonic structures

While silicon photonics has leveraged the nanofabrication tools and techniques from the microelectronics industry, it has also inherited the metrological methods from the same. Photonics fabrication is inherently different from microelectronics in its intrinsic sensitivity to 3D shape and geometry, especially in a high-index contrast platform like silicon-on-insulator. In this work, we show that electrical resistance measurements can in principle be used to infer the geometry of such nanophotonic structures and reconstruct the micro-loading curves of foundry etch processes. We implement our ideas to infer 3D geometries from a standard silicon photonics foundry and discuss some of the potential sources of error that need to be calibrated out. By using electrical measurements, pre-designed structures can be rapidly tested at wafer-scale, without the added complexity of optical alignment and spectral measurement and analysis, providing both a route towards predictive optical device performance and a means to control the geometry variation.

Damping of relaxation oscillations, photon-photon resonance, and tolerance to external optical feedback of III-V/SiN hybrid lasers with a dispersive narrow band mirror

We address the stability of a tunable hybrid laser based on a III-V Reflective Semiconductor Optical Amplifier (RSOA) edge-coupled with a Silicon Photonic (SiPh) dispersive mirror through a model of time-delayed algebraic differential equations that accounts for the narrow band mirror. Our results allow to (i) analyze the stability of single mode lasing, (ii) quantify the impact of the mirror bandwidth on the damping of the laser relaxation oscillations and the emergence of photon-photon resonance, and (iii) study the tolerance of the laser to the external optical feedback. Thanks to this analysis, we find a mirror design that gives ultra-high stability up to an external feedback level of -10 dB. The aim of the work is providing a tool for understanding and interpreting the dynamics of these lasers and design configurations for isolator-free operation.

Study into the spread of heat from thermo-optic silicon photonic elements

Phase modulators based upon the thermo-optic effect are used widely in silicon photonics for low speed applications such as switching and tuning. The dissipation of the heat produced to drive the device to the surrounding silicon is a concern as it can dictate how compact and tightly packed components can be without concerns over thermal crosstalk. In this paper we study through modelling and experiment, on various silicon on insulator photonic platforms, how close waveguides can be placed together without significant thermal crosstalk from adjacent devices.

Theoretical verification of a silicon-wire flat-spectral-band wavelength filter based on multimode interference couplers with symmetric and asymmetric splitting ratios for the broadband operating range

A novel, to the best of our knowledge, device scheme for a silicon-nanowire flat-spectral-band wavelength optical filter is proposed and theoretically demonstrated. The proposed wavelength filter is composed of cascade-connected multiple delayed interference optical delay lines, together with several multimode interference couplers with symmetric and asymmetric splitting ratios. Theoretical calculations based on analytic and numerical simulations exhibit flatband spectra over a wavelength range of >80 nm with potentially better production yield for arbitrary channel spacing.

High-speed silicon Michelson interferometer modulator and streamlined IMDD PAM-4 transmission of Mach-Zehnder modulators for the 2 μm wavelength band

We demonstrate high-speed silicon modulators optimized for operating at the wavelength of 2 μm. The Mach-Zehnder interferometer (MZI) carrier-depletion modulator with 2 mm phase shifter has a single-arm modulation efficiency (V_π ·L_π) of 2.89 V·cm at 4 V reverse bias. Using a push-pull configuration it operates at a data rate of 25 Gbit/s OOK with an extinction ratio of 6.25 dB. We also proposed a mathematically-analysed streamlined IMDD PAM-4 scheme and successfully demonstrated a 25 Gbit/s datarate PAM-4 with the same 2 mm modulator. A Michelson interferometer carrier-depletion modulator with 0.5 mm phase shift length has also been shown with modulation efficiency (V_π ·L_π) of 1.36 V·cm at 4 V reverse bias and data rate of 20 Gbit/s OOK. The Michelson interferometer modulator performs similarly to a Mach-Zehnder modulator with twice the phase shifter length.