Adsorption of NO2 and H2S on ZnGa2O4(111) Thin Films: A First-Principles Density Functional Theory Study

Growth and Characterization of Sputtered InAlN Nanorods on Sapphire Substrates for Acetone Gas Sensing

The demand for highly sensitive and selective gas sensors has been steadily increasing, driven by applications in various fields such as environmental monitoring, healthcare, and industrial safety. In this context, ternary alloy indium aluminum nitride (InAlN) semiconductors have emerged as a promising material for gas sensing due to their unique properties and tunable material characteristics. This work focuses on the fabrication and characterization of InAlN nanorods grown on sapphire substrates using an ultra-high vacuum magnetron sputter epitaxy with precise control over indium composition and explores their potential for acetone-gas-sensing applications. Various characterization techniques, including XRD, SEM, and TEM, demonstrate the structural and morphological insights of InAlN nanorods, making them suitable for gas-sensing applications. To evaluate the gas-sensing performance of the InAlN nanorods, acetone was chosen as a target analyte due to its relevance in medical diagnostics and industrial processes. The results reveal that the InAlN nanorods exhibit a remarkable sensor response of 2.33% at 600 ppm acetone gas concentration at an operating temperature of 350 °C, with a rapid response time of 18 s. Their high sensor response and rapid response make InAlN a viable candidate for use in medical diagnostics, industrial safety, and environmental monitoring.

Structure Effect on the Response of ZnGa2O4 Gas Sensor for Nitric Oxide Applications

We fabricated a gas sensor with a wide-bandgap ZnGa₂O₄ (ZGO) epilayer grown on a sapphire substrate by metalorganic chemical vapor deposition. The ZGO presented (111), (222) and (333) phases demonstrated by an X-ray diffraction system. The related material characteristics were also measured by scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. This ZGO gas sensor was used to detect nitric oxide (NO) in the parts-per-billion range. In this study, the structure effect on the response of the NO gas sensor was studied by altering the sensor dimensions. Two approaches were adopted to prove the dimension effect on the sensing mechanism. In the first approach, the sensing area of the sensors was kept constant while both channel length (L) and width (W) were varied with designed dimensions (L × W) of 60 × 200, 80 × 150, and 120 ×100 μm². In the second, the dimensions of the sensing area were altered (60, 40, and 20 μm) with W kept constant. The performance of the sensors was studied with varying gas concentrations in the range of 500 ppb~10 ppm. The sensor with dimensions of 20 × 200 μm² exhibited a high response of 11.647 in 10 ppm, and 1.05 in 10 ppb for NO gas. The sensor with a longer width and shorter channel length exhibited the best response. The sensing mechanism was provided to explain the above phenomena. Furthermore, the reaction between NO and the sensor surface was simulated by O exposure of the ZGO surface in air and calculated by first principles.

Ab Initio Studies of Work Function Changes of CO Adsorption on Clean and Pd-Doped ZnGa2O4(111) Surfaces for Gas Sensors

We performed first-principles calculations to study the adsorption of the CO molecules on both clean and Pd-doped ZnGa2O4(111) surfaces. The adsorption reaction and work function of the CO adsorption models were examined. The CO molecules on the clean and Pd-doped ZnGa2O4(111) surfaces exhibit maximum work function changes of −0.55 eV and −0.79 eV, respectively. The work function change of Pd-doped ZnGa2O4(111) for detecting CO is 1.43 times higher than that of the clean ZnGa2O4(111). In addition, the adsorption energy is also significantly reduced from −1.88 eV to −3.36 eV without and with Pd atoms, respectively. The results demonstrate ZnGa2O4-based gas sensors doped by palladium can improve the sensitivity of detecting CO molecules.

Influences of Work Function Changes in NO2 and H2S Adsorption on Pd-Doped ZnGa2O4(111) Thin Films: First-Principles Studies

The work function variations of NO2 and H2S molecules on Pd-adsorbed ZnGa2O4(111) were calculated using first-principle calculations. For the bonding of a nitrogen atom from a single NO2 molecule to a Pd atom, the maximum work function change was +1.37 eV, and for the bonding of two NO2 molecules to a Pd atom, the maximum work function change was +2.37 eV. For H2S adsorption, the maximum work function change was reduced from −0.90 eV to −1.82 eV for bonding sulfur atoms from a single and two H2S molecules to a Pd atom, respectively. Thus, for both NO2 and H2S, the work function change increased with an increase in gas concentration, showing that Pd-decorated ZnGa2O4(111) is a suitable material in NO2/H2S gas detectors.