A Review on Machine and Deep Learning for Semiconductor Defect Classification in Scanning Electron Microscope Images

Ultrathin silicon wafer defect detection method based on IR micro-digital holography

Ultrathin silicon wafers are key components of wearable electronic devices and flexible electronics. Defects produced during the preparation process of ultrathin silicon wafers have a great influence on the electronic performance. A high-precision, nondestructive, and rapid damage detection method is urgently needed. IR digital holography has the advantage of being insensitive to visible light and environmental interference. In addition, micro-holography can achieve micro-target scaling with large range scaling. An ultrathin silicon wafer defect detection method of IR micro-digital holography is proposed in this paper for what we believe is the first time. Using the proposed defect detection method based on holography, the detection accuracy reached the submicron level.

Properties and Characterization Techniques of Graphene Modified Asphalt Binders

Graphene is a carbon-based nanomaterial used in various industries to improve the performance of hundreds of materials. For instance, graphene-like materials have been employed as asphalt binder modifying agents in pavement engineering. In the literature, it has been reported that (in comparison to an unmodified binder) the Graphene Modified Asphalt Binders (GMABs) exhibit an enhanced performance grade, a lower thermal susceptibility, a higher fatigue life, and a decreased accumulation of permanent deformations. Nonetheless, although GMABs stand out significantly from traditional alternatives, there is still no consensus on their behavior regarding chemical, rheological, microstructural, morphological, thermogravimetric, and surface topography properties. Therefore, this research conducted a literature review on the properties and advanced characterization techniques of GMABs. Thus, the laboratory protocols covered by this manuscript are atomic force microscopy, differential scanning calorimetry, dynamic shear rheometer, elemental analysis, Fourier transform infrared spectroscopy, Raman spectroscopy, scanning electron microscopy, thermogravimetric analysis, X-ray diffraction, and X-ray photoelectron spectroscopy. Consequently, the main contribution of this investigation to the state-of-the-art is the identification of the prominent trends and gaps in the current state of knowledge.

Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers

High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including free-space communication; industrial processing; and the medical, aerospace, and military fields, as well as other fields. The reliability of high-power semiconductor lasers is the key point of the application system. Higher reliability is sought in the military defense and aerospace fields in particular. Reliability testing and failure analysis help to improve the performance of high-power semiconductor lasers. This article provides a basis for understanding the reliability issues of semiconductor lasers across the whole supply chain. Firstly, it explains the failure modes and causes of failure in high-power semiconductor lasers; this article also summarizes the principles and application status of accelerated aging experiments and lifetime evaluation; it also introduces common techniques used for high-power semiconductor laser failure analysis, such as the electron beam-induced current (EBIC) technique and the optical beam-induced current (OBIC) technique, etc. Finally, methods used to improve the reliability of high-power semiconductor lasers are proposed in terms of the preparation process, reliability screening, and method application.